Toshiba - MOSFETs
3,350 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: TK750A60F,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch TT-MOSIX 600V 40W 1130pF 10A | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 10 A | 750 mOhms | - 30 V, 30 V | 2 V | 30 nC | - 55 C | + 150 C | 40 W | Enhancement | MOSIX | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 20 A | 40 mOhms | - 30 V, 30 V | 4 V | 85 nC | + 150 C | 297 W | Enhancement | Tube | |||||||
Mfr: TK4R3E06PL,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 60V 3280pF 48.2nC 106A 87W | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 106 A | 3.3 mOhms | - 20 V, 20 V | 1.5 V | 48.2 nC | - 55 C | + 175 C | 87 W | Enhancement | U-MOSIX-H | Tube | ||||
Mfr: TK72E12N1,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 120V 179A 225W UMOSVIII 130nC .0044 | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 120 V | 179 A | 4.4 mOhms | - 20 V, 20 V | 2 V | 130 nC | + 150 C | 255 W | Enhancement | U-MOSVIII-H | Tube | |||||
Mfr: SSM6H19NU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs UDFN6 S-MOS TRSTR Pd: 0.5W F: 1MHz | 0In Stock | Si | SMD/SMT | UDFN-6 | N-Channel, SBD | 1 Channel | 40 V | 2 A | 160 mOhms | - 12 V, 12 V | 500 mV | 2.2 nC | - 55 C | + 150 C | 1 W | Enhancement | Reel | |||||
Mfr: TK7J90E,S1E TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs PLN MOS 900V 2000m (VGS=10V) TO-3PN | 0In Stock | Si | Through Hole | TO-3PN-3 | N-Channel | 1 Channel | 900 V | 7 A | 1.6 Ohms | - 30 V, 30 V | 4 V | 32 nC | - 55 C | + 150 C | 200 W | Enhancement | MOSVIII | Tray | ||||
0In Stock | Si | SMD/SMT | TSON-Advance-8 | N-Channel | 1 Channel | 40 V | 80 A | 2.3 mOhms | - 20 V, 20 V | 1.4 V | 41 nC | - 55 C | + 175 C | 104 W | Enhancement | U-MOSIX-H | Reel | |||||
Mfr: SSM3J331R,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs P-Ch U-MOSVI FET ID -4A -20VDSS 630pF | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 20 V | 4 A | 150 mOhms | - 8 V, 8 V | 1 V | 10.4 nC | - 55 C | + 150 C | 1 W | Enhancement | U-MOSVI | Reel | ||||
Mfr: SSM6P49NU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs SM Sig MOS 2 in 1 P-Ch -4A -20V 12V GS | 0In Stock | Si | SMD/SMT | UDFN-6 | P-Channel | 2 Channel | 20 V | 4 A | 157 mOhms | - 12 V, 12 V | 1.2 V | - 55 C | + 150 C | 1 W | Enhancement | U-MOSVI | Reel | |||||
Mfr: SSM6J501NU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs PWR MGT 1.5V Drive P-Ch MOS -20V | 0In Stock | Si | SMD/SMT | UDFN-6 | P-Channel | 1 Channel | 20 V | 10 A | 15.3 mOhms | - 8 V, 8 V | 300 mV | 29.9 nC | - 55 C | + 150 C | 2 W | Enhancement | U-MOSVI | Reel | ||||
Mfr: SSM3J356R,LXHF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs P Channel -60V -2A AECQ MOSFET | 0In Stock | Si | SMD/SMT | SOT-23F-3 | P-Channel | 1 Channel | 60 V | 2 A | 360 mOhms | - 20 V, 10 V | 2 V | 8.3 nC | - 55 C | + 150 C | 2 W | Enhancement | AEC-Q101 | Reel | ||||
Mfr: SSM6N37FE(TE85L,F) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch FET MOS 1.5V Drive 20V 500mA | 0In Stock | Si | SMD/SMT | ES6-6 | N-Channel | 2 Channel | 20 V | 250 mA | - 10 V, 10 V | - 55 C | + 150 C | 150 mW | Reel | |||||||||
Mfr: TK8A60W,S4VX TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 8A 30W FET 600V 570pF 18.5nC | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 8 A | 420 mOhms | - 30 V, 30 V | 3.7 V | 18.5 nC | - 55 C | + 150 C | 30 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TK650A60F,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch TT-MOSIX 600V 45W 1320pF 11A | 0In Stock | Si | Through Hole | TO-220SIS-3 | N-Channel | 1 Channel | 600 V | 11 A | 650 mOhms | - 30 V, 30 V | 2 V | 34 nC | + 150 C | 45 W | Enhancement | MOSIX | Tube | |||||
0In Stock | Si | Through Hole | TO-220SIS-3 | N-Channel | 1 Channel | 600 V | 20 A | 125 mOhms | 30 V | 4 V | 28 nC | + 150 C | 40 W | Enhancement | Tube | |||||||
0In Stock | Si | Through Hole | TO-220SIS-3 | N-Channel | 1 Channel | 600 V | 17 A | 155 mOhms | 30 V | 4 V | 24 nC | + 150 C | 40 W | Enhancement | Tube | |||||||
0In Stock | Si | SMD/SMT | UDFN-6B | N-Channel | 1 Channel | 100 V | 2 A | 125 mOhms | 20 V | 2.5 V | 3.6 nC | + 150 C | 2 W | Enhancement | Reel | |||||||
Mfr: TK095A65Z5,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 650 V 0.095 Ohm N-ch MOSFET TO-220SIS DTMOS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 29 A | 95 mOhms | 30 V | 4.5 V | 50 nC | + 150 C | 45 W | Enhancement | Tube | ||||||
Mfr: TK125E60Z1,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 600 V 0.125 Ohm N-ch MOSFET TO-220 DTMOS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 20 A | 125 mOhms | 30 V | 4 V | 28 nC | + 150 C | 150 W | Enhancement | Tube | ||||||
Mfr: TPH3R008QM,LQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 80V UMOS9-H SOP-Advance(N) 3mohm | 0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 80 V | 170 A | 3 mOhms | - 20 V, 20 V | 3.5 V | 71 nC | + 175 C | 180 W | Enhancement | Reel | ||||||
Mfr: SSM6K819R,LXHF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs AUTO AEC-Q SS MOS N-ch Logic-Level Gate Drive VDSS:100V IC:10A PD:1.5W TSOP6F | 0In Stock | Si | SMD/SMT | TSOP6F | N-Channel | 1 Channel | 100 V | 10 A | 20.9 mOhms | - 20 V, 20 V | 2.5 V | 8.5 nC | + 175 C | 1.5 W | Enhancement | AEC-Q101 | Reel | SSM6K819R,LXHF(B | ||||
Mfr: SSM6P15FU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Sm-signal/PwrMgmt2n1 US6 (SOT-363) | 0In Stock | Si | SMD/SMT | US-6 | P-Channel | 2 Channel | 30 V | 100 mA | 12 Ohms | - 20 V, 20 V | 1.7 V | - 55 C | + 150 C | 200 mW | Enhancement | AEC-Q101 | MOSVI | Reel | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 30 A | 90 mOhms | - 30 V, 30 V | 4 V | 47 nC | - 55 C | + 150 C | 230 W | Enhancement | DTMOSVI | Reel | |||||
Mfr: TK22A65X,S5X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-220SIS PD=45W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 22 A | 150 mOhms | - 30 V, 30 V | 3.5 V | 50 nC | - 55 C | + 150 C | 45 W | Enhancement | DTMOSIV-H | Tube | ||||
Mfr: TK25S06N1L,LXHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 57W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 60 V | 25 A | 36.8 mOhms | - 20 V, 20 V | 1.5 V | 15 nC | - 55 C | + 175 C | 57 W | Enhancement | AEC-Q101 | Reel | TK25S06N1L,LXHQ(O |
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