Toshiba - MOSFETs
3,350 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | SMD/SMT | TSOP-6F | N-Channel | 1 Channel | 60 V | 6 A | 36 mOhms | - 20 V, 20 V | 2.5 V | 9.3 nC | + 175 C | 3 W | Enhancement | AEC-Q101 | Reel | ||||||
0In Stock | Si | SMD/SMT | DFN2020B-6 | N-Channel | 1 Channel | 30 V | 10 A | 56 mOhms | - 8 V, 12 V | 1 V | 2.2 nC | + 150 C | 3.3 W | Enhancement | Reel | |||||||
Mfr: TPM7R10CQ5,LQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-ch MOSFET, 150 V, 0.0071 ohma.10V, Qrr=43nCa.100A/ s, SOP Advance(E), U-MOS?-H | 0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 150 V | 120 A | 7.1 mOhms | 20 V | 4.5 V | 57 nC | + 150 C | 250 W | Enhancement | Reel | ||||||
Mfr: SSM6K804R,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Silicon N-channel MOS (U-MOSIX-H) | 0In Stock | Si | Reel | |||||||||||||||||||
Mfr: TPN30008NH,LQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 80V 22A 27W UMOSVIII 710pF 11nC | 0In Stock | Si | N-Channel | 1 Channel | U-MOSVIII-H | Reel | ||||||||||||||||
Mfr: TK22A10N1,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs MOSFET NCh12.2ohm 10V 10uA VDS100V | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 22 A | 11.5 mOhms | - 20 V, 20 V | 4 V | 28 nC | - 55 C | + 150 C | 30 W | Enhancement | U-MOSVIII-H | Tube | ||||
Mfr: TJ60S04M3L(T6L1,NQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs P-Ch MOS -60A -40V 90W 6510pF 0.0063 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 40 V | 60 A | 6.3 mOhms | - 20 V, 10 V | 3 V | 125 nC | - 55 C | + 175 C | 90 W | Enhancement | AEC-Q100 | U-MOSVI | Reel | |||
Mfr: TK10A80E,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs PLN MOS 800V 1000m (VGS=10V) TO-220SIS | 0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 800 V | 10 A | 700 mOhms | - 30 V, 30 V | 4 V | 46 nC | - 55 C | + 150 C | 50 W | Enhancement | MOSVIII | Tube | ||||
Mfr: TK65S04N1L,LQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs UMOSVIII 40V 4.3m max(VGS=10V) DPAK | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 40 V | 65 A | 3.3 mOhms | - 20 V, 20 V | 2.5 V | 39 nC | - 55 C | + 175 C | 68 W | Enhancement | AEC-Q101 | U-MOSVIII-H | Reel | |||
Mfr: TJ80S04M3L,LXHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 100W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 40 V | 80 A | 5.2 mOhms | - 20 V, 10 V | 3 V | 158 nC | + 175 C | 100 W | Enhancement | AEC-Q101 | Reel | TJ80S04M3L,LXHQ(O | ||||
Mfr: XPH4R714MC,L1XHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 132W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | SOP-Advance-8 | P-Channel | 1 Channel | 40 V | 60 A | 4.7 mOhms | - 20 V, 10 V | 2.1 V | 160 nC | - 55 C | + 175 C | 132 W | Enhancement | AEC-Q101 | Reel | XPH4R714MC,L1XHQ(O | |||
Mfr: TK5R3E08QM,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs UMOS10 TO-220AB 80V 5.3mohm | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 80 V | 120 A | 5.3 mOhms | - 20 V, 20 V | 3.5 V | 55 nC | + 175 C | 150 W | Enhancement | Tube | TK5R3E08QM,S1X(S | |||||
Mfr: TK10E60W,S1VX TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 9.7A 100W FET 600V 700pF 20nC | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 9.7 A | 380 mOhms | - 30 V, 30 V | 3.7 V | 20 nC | - 55 C | + 150 C | 100 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TJ60S04M3L,LXHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 90W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 40 V | 60 A | 6.3 mOhms | - 20 V, 10 V | 3 V | 125 nC | + 175 C | 90 W | Enhancement | AEC-Q101 | Reel | TJ60S04M3L,LXHQ(O | ||||
0In Stock | Si | SMD/SMT | PS-8 | P-Channel | 1 Channel | 40 V | 8 A | 18 mOhms | - 20 V, 10 V | 2 V | 44.6 nC | - 55 C | + 175 C | 2.01 W | Enhancement | AEC-Q101 | U-MOSIV | Reel | ||||
Mfr: TPN13008NH,L1Q TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs U-MOSVIII-H 80V 40A 18nC MOSFET | 0In Stock | Si | SMD/SMT | TSON-8 | N-Channel | 1 Channel | 80 V | 40 A | 13.3 mOhms | - 20 V, 20 V | 4 V | 18 nC | - 55 C | + 150 C | 42 W | Enhancement | U-MOSVIII-H | Reel | ||||
Mfr: TK5R1A08QM,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs UMOS10 TO-220SIS 80V 5.1mohm | 0In Stock | Si | Through Hole | TO-220SIS-3 | N-Channel | 1 Channel | 80 V | 70 A | 5.1 mOhms | - 20 V, 20 V | 3.5 V | 54 nC | + 175 C | 45 W | Enhancement | Tube | TK5R1A08QM,S4X(S | |||||
Mfr: TPW1R306PL,L1Q TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs POWER MOSFET TRANSISTOR PD=170W | 0In Stock | Si | SMD/SMT | DSOP-8 | N-Channel | 1 Channel | 60 V | 260 A | 1.29 mOhms | - 20 V, 20 V | 1.5 V | 91 nC | - 55 C | + 175 C | 170 W | Enhancement | U-MOSIX-H | Reel | ||||
Mfr: SSM6J422TU,LXHF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs SMOS P-ch VDSS=-20V, VGSS=+6/-8V, ID=-4. | 0In Stock | Si | SMD/SMT | UF6-6 | P-Channel | 1 Channel | 20 V | 4 A | 42.7 mOhms | - 8 V, 6 V | 1 V | 12.8 nC | + 150 C | 1 W | Enhancement | AEC-Q101 | Reel | |||||
0In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 600 V | 40 A | 55 mOhms | - 30 V, 30 V | 4 V | 65 nC | 270 W | Enhancement | Reel | |||||||||
Mfr: SSM6K809R,LXHF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs AUTO AEC-Q SS MOS N-ch Logic-Level Gate Drive VDSS:60V IC:6.0A PD:1.5W TSOP6F | 0In Stock | Si | SMD/SMT | TSOP6F | N-Channel | 1 Channel | 60 V | 6 A | 36 mOhms | - 20 V, 20 V | 2.5 V | 9.3 nC | + 175 C | 1.5 W | Enhancement | AEC-Q101 | Reel | SSM6K809R,LXHF(B | ||||
Mfr: SSM3J325F,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs P-Ch Small Signal 270pF -2A -20V 4.6nC | 0In Stock | Si | SMD/SMT | SOT-346-3 | P-Channel | 1 Channel | 20 V | 2 A | 311 mOhms | - 8 V, 8 V | 1 V | 4.6 nC | - 55 C | + 150 C | 600 mW | Enhancement | U-MOSVI | Reel | ||||
Mfr: TK100L60W,VQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs DTMOSIV 600V 18mOhm 100A 800W 15000pF | 0In Stock | Si | Through Hole | TO-3PL-3 | N-Channel | 1 Channel | 600 V | 100 A | 15 mOhms | - 30 V, 30 V | 3.7 V | 360 nC | - 55 C | + 150 C | 797 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: SSM6L35FU(TE85L,F) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch Sm Sig FET 0.1A -0.1A 20V 2-in1 | 0In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel, P-Channel | 2 Channel | 20 V | 100 mA, 180 mA | 11 Ohms | - 10 V, 10 V | 1 V | - 55 C | + 150 C | 200 mW | Enhancement | AEC-Q101 | MOSVI | Reel | ||||
Mfr: TJ10S04M3L,LXHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 27W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 40 V | 10 A | 44 mOhms | - 20 V, 10 V | 3 V | 19 nC | + 175 C | 27 W | Enhancement | AEC-Q101 | Reel | TJ10S04M3L,LXHQ(O |
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