Toshiba - MOSFETs
3,350 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: TK110E10PL,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-220 PD=87W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 42 A | 16 mOhms | - 20 V, 20 V | 2.5 V | 33 nC | - 55 C | + 175 C | 87 W | Enhancement | U-MOSIX-H | Tube | ||||
Mfr: SSM3J371R,LXHF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs SMOS P-ch Vdss:-20V Vgss:-8/+6V Id:-4A S | 0In Stock | Si | SMD/SMT | SOT-23F-3 | P-Channel | 1 Channel | 20 V | 4 A | 55 mOhms | - 8 V, 6 V | 1 V | 10.4 nC | + 175 C | 2 W | Enhancement | AEC-Q101 | Reel | |||||
Mfr: SSM6N7002KFU,LXH TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs SMOS 2 in 1 Dual Nch High ESD protected | 0In Stock | Si | SMD/SMT | US6-6 | N-Channel | 1 Channel | 60 V | 300 mA | 1.5 Ohms | - 20 V, 20 V | 2.1 V | 390 pC | + 150 C | 500 mW | Enhancement | AEC-Q101 | Reel | |||||
0In Stock | Si | SMD/SMT | SOT-323-3 | N-Channel | 1 Channel | 30 V | 100 mA | 3.6 Ohms | - 20 V, 20 V | 800 mV | - 55 C | + 150 C | 150 mW | Enhancement | U-MOSIII | Reel | ||||||
Mfr: SSM3K335R,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch U-MOSVI FET ID 6A 30VDSS 340pF | 0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 30 V | 6 A | 56 mOhms | - 20 V, 20 V | 2.5 V | 2.7 nC | - 55 C | + 150 C | 1 W | Enhancement | AEC-Q100 | U-MOSVII-H | Reel | |||
Mfr: TPW1R005PL,L1Q TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs POWER MOSFET TRANSISTOR PD=170W | 0In Stock | Si | SMD/SMT | DSOP-8 | N-Channel | 1 Channel | 45 V | 300 A | 1.65 mOhms | - 20 V, 20 V | 1.4 V | 122 nC | - 55 C | + 175 C | 170 W | Enhancement | U-MOSIX-H | Reel | ||||
Mfr: SSM6K341NU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=6A VDSS=100V | 0In Stock | Si | SMD/SMT | UDFN-6 | N-Channel | 1 Channel | 60 V | 6 A | 28 mOhms | - 20 V, 20 V | 1.5 V | 9.3 nC | - 55 C | + 150 C | 1.25 W | Enhancement | U-MOSVIII-H | Reel | ||||
0In Stock | Si | SMD/SMT | UFM-3 | P-Channel | 1 Channel | 20 V | 3 A | 103 mOhms | - 8 V, 6 V | 1 V | 4.6 nC | + 150 C | 1 W | Enhancement | AEC-Q101 | U-MOSVI | Reel | |||||
0In Stock | Si | SMD/SMT | SOT-23F-3 | P-Channel | 1 Channel | 20 V | 6 A | 29.8 mOhms | - 8 V, 6 V | 1 V | 12.8 nC | + 150 C | 2 W | Enhancement | AEC-Q101 | U-MOSVI | Reel | |||||
0In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 2 Channel | 20 V | 250 mA | 1.4 Ohms | - 10 V, 10 V | 1 V | + 150 C | 285 mW | Enhancement | U-MOSVII | Reel | |||||||
0In Stock | Si | Reel | ||||||||||||||||||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 250 V | 13 A | 250 mOhms | - 20 V, 20 V | 1.5 V | 25 nC | - 55 C | + 150 C | 96 W | Enhancement | MOSVII | Reel | |||||
Mfr: TK30A06N1,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs MOSFET NCh11.5ohm VGS10V 10uA VDS60V | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 30 A | 12.2 mOhms | - 20 V, 20 V | 4 V | 16 nC | - 55 C | + 150 C | 25 W | Enhancement | U-MOSVIII-H | Tube | ||||
Mfr: TPH1R403NL,L1Q TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs X35PBF Power MOSFET Trans VGS4.5VVDS30V | 0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 30 V | 60 A | 1.4 mOhms | - 20 V, 20 V | 2.3 V | 46 nC | - 55 C | + 150 C | 64 W | Enhancement | U-MOSVIII-H | Reel | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 30 A | 65 mOhms | - 30 V, 30 V | 4 V | 62 nC | - 55 C | + 150 C | 270 W | Enhancement | DTMOSVI | Reel | |||||
Mfr: SSM6J808R,LXHF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs AUTO AEC-Q SS MOS P-ch Logic-Level Gate Drive VDSS:-40V IC:-7A PD:1.5W TSOP6F | 0In Stock | Si | SMD/SMT | TSOP6F | P-Channel | 1 Channel | 40 V | 7 A | 48 mOhms | - 20 V, 10 V | 2 V | 24.2 nC | + 150 C | 1.5 W | AEC-Q101 | Reel | SSM6J808R,LXHF(B | |||||
Mfr: TK160F10N1L,LQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs U-MOSVIII-H 100V 160A 122nC MOSFET | 0In Stock | Si | SMD/SMT | TO-220SMW-3 | N-Channel | 1 Channel | 100 V | 160 A | 2 mOhms | - 20 V, 20 V | 2.5 V | 122 nC | + 175 C | 375 W | Enhancement | AEC-Q101 | U-MOSVIII-H | Reel | ||||
Mfr: SSM6K388NU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-ch MOSFET, 60 V, 2 A, 82 m at 10 V, UDFN6B | 0In Stock | Si | SMD/SMT | UDFN-6B | N-Channel | 1 Channel | 60 V | 2 A | 87 mOhms | 20 V | 2.1 V | 2.66 nC | + 150 C | 3 W | Enhancement | Reel | ||||||
Mfr: TK31A60W,S4VX TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 30.8A 45W FET 600V 3000pF 86nC | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 30.8 A | 73 mOhms | - 30 V, 30 V | 3.7 V | 86 nC | - 55 C | + 150 C | 45 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TK12A60D(STA4,Q,M) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch MOS 12A 600V 45W 1800pF 0.55 | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 12 A | 550 mOhms | - 30 V, 30 V | 2 V | 38 nC | - 55 C | + 150 C | 45 W | Enhancement | MOSVII | Tube | ||||
Mfr: TK4A50D(STA4,Q,M) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch MOS 4A 500V 30W 380pF 2.0 Ohm | 0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 500 V | 4 A | 2 Ohms | 30 W | MOSVII | Tube | ||||||||||
0In Stock | Si | SMD/SMT | UF-6 | P-Channel | 1 Channel | 30 V | 2.5 A | 73 mOhms | - 20 V, 20 V | 2.6 V | 16 nC | - 55 C | + 150 C | 500 mW | Enhancement | AEC-Q101 | U-MOSIII | Reel | ||||
Mfr: TK110A10PL,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-220SIS PD=36W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 36 A | 16 mOhms | - 20 V, 20 V | 2.5 V | 33 nC | - 55 C | + 175 C | 36 W | Enhancement | U-MOSIX-H | Tube | ||||
0In Stock | Si | SMD/SMT | ES-6 | N-Channel, P-Channel | 2 Channel | 20 V | 800 mA | 235 mOhms, 390 mOhms | - 8 V, 8 V | 1 V | 1 nC, 1.6 nC | - 55 C | + 150 C | 150 mW | Enhancement | Reel | ||||||
Mfr: SSM6N61NU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Small-signal MOSFET 2 in 1 Nch ID: 4A | 0In Stock | Si | SMD/SMT | UDFN-6 | N-Channel | 2 Channel | 20 V | 4 A | 108 mOhms | - 8 V, 8 V | 400 mV | 3.6 nC | - 55 C | + 150 C | 2 W | Enhancement | AEC-Q101 | U-MOSVII-H | Reel |
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