Toshiba - MOSFETs
3,835 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: TK65S04N1L,LQ TTI: Not Assigned Toshiba Availability: Not Available OnlineMOSFETs UMOSVIII 40V 4.3m max(VGS=10V) DPAK | Not Available Online | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 40 V | 65 A | 3.3 mOhms | 20 V | 2.5 V | 39 nC | - 55 C | + 175 C | 68 W | Enhancement | AEC-Q101 | U-MOSVIII-H | Reel | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 29 A | 95 mOhms | 30 V | 4.5 V | 50 nC | + 150 C | 230 W | Enhancement | Tube | |||||||
Mfr: TK5R1A08QM,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs UMOS10 TO-220SIS 80V 5.1mohm | 0In Stock | Si | Through Hole | TO-220SIS-3 | N-Channel | 1 Channel | 80 V | 70 A | 5.1 mOhms | 20 V | 3.5 V | 54 nC | + 175 C | 45 W | Enhancement | Tube | TK5R1A08QM,S4X(S | |||||
Mfr: SSM6K804R,LF TTI: Not Assigned Toshiba Availability: Not Available OnlineMOSFETs Silicon N-channel MOS (U-MOSIX-H) | Not Available Online | Si | Reel | |||||||||||||||||||
0In Stock | Si | 650 V | 18 A | 130 mOhms | 30 V | 4 V | 29 nC | - 55 C | + 150 C | 150 W | Enhancement | Tube | ||||||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 35 A | 80 mOhms | 30 V | 3 V | 115 nC | - 55 C | + 150 C | 50 W | Enhancement | DTMOSIV | Tube | |||||
Mfr: SSM5N16FU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=0.1A VDSS=20V | 0In Stock | Si | SMD/SMT | SOT-353-5 | N-Channel | 2 Channel | 20 V | 100 mA | 3 Ohms | 10 V | 600 mV | + 150 C | 200 mW | Enhancement | MOSVI | Reel | ||||||
Mfr: SSM6L35FU(TE85L,F) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch Sm Sig FET 0.1A -0.1A 20V 2-in1 | 0In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel, P-Channel | 2 Channel | 20 V | 100 mA, 180 mA | 11 Ohms | 10 V | 1 V | - 55 C | + 150 C | 200 mW | Enhancement | AEC-Q101 | MOSVI | Reel | ||||
Mfr: SSM5N15FU(TE85L,F) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch Sm Sig FET 0.1A 30V 2-in-1 | 0In Stock | Si | SMD/SMT | SOT-353-5 | N-Channel | 2 Channel | 30 V | 100 mA | 4 Ohms | 1.5 V | 200 mW | Reel | ||||||||||
Mfr: TK100A08N1,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs MOSFET NCh 2.6ohm VGS10V10uAVDS80V | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 80 V | 100 A | 2.6 mOhms | 20 V | 4 V | 130 nC | - 55 C | + 150 C | 45 W | Enhancement | U-MOSVIII-H | Tube | ||||
Mfr: TK7S10N1Z,LQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 60W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 7 A | 48 mOhms | 20 V | 2 V | 7.1 nC | - 55 C | + 175 C | 50 W | Enhancement | AEC-Q101 | U-MOSVIII-H | Reel | |||
Mfr: TK10A80E,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs PLN MOS 800V 1000m (VGS=10V) TO-220SIS | 0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 800 V | 10 A | 700 mOhms | 30 V | 4 V | 46 nC | - 55 C | + 150 C | 50 W | Enhancement | MOSVIII | Tube | ||||
0In Stock | Si | SMD/SMT | ES6-6 | N-Channel, P-Channel | 2 Channel | 20 V | 100 mA, 180 mA | 20 Ohms, 44 Ohms | 10 V | 400 mV | - 55 C | + 150 C | 150 mW | Enhancement | AEC-Q101 | MOSVI | Reel | |||||
Mfr: TK12A80W,S4X TTI: Not Assigned Toshiba Availability: Not Available OnlineMOSFETs N-Ch 800V 1400pF 23nC 11.5A 45W | Not Available Online | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 11.5 A | 380 mOhms | 20 V | 3 V | 23 nC | - 55 C | + 150 C | 45 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TK17E80W,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 800V 2050pF 32nC 17A 180W | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 17 A | 250 mOhms | 20 V | 3 V | 32 nC | - 55 C | + 150 C | 180 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TK22E10N1,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch PWR FET 52A 72W 100V VDSS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 52 A | 13.8 mOhms | 20 V | 2 V | 28 nC | - 55 C | + 150 C | 72 W | Enhancement | U-MOSVIII-H | Tube | ||||
Mfr: TK72E08N1,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 80V N-Ch PWR FET 157A 192W 81nC | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 80 V | 157 A | 4.3 mOhms | 20 V | 81 nC | 192 W | U-MOSVIII-H | Tube | ||||||||
Mfr: TK39J60W,S1VQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 38.8A 270W FET 600V 4100pF 110nC | 0In Stock | Si | Through Hole | TO-3PN-3 | N-Channel | 1 Channel | 600 V | 38.8 A | 65 mOhms | 30 V | 2.7 V | 110 nC | - 55 C | + 150 C | 270 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: SSM6J213FE(TE85L,F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs P-Ch U-MOS VI FET ID -2.6A -20V 290pF | 0In Stock | Si | SMD/SMT | ES6-6 | P-Channel | 1 Channel | 20 V | 2.6 A | 250 mOhms | 8 V | 1 V | 4.7 nC | - 55 C | + 150 C | 500 mW | Enhancement | U-MOSVI | Reel | ||||
Mfr: TK62J60W,S1VQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 61.8A 400W FET 600V 3500pF 180nC | 0In Stock | Si | Through Hole | TO-3PN-3 | N-Channel | 1 Channel | 600 V | 61.8 A | 33 mOhms | 30 V | 3.7 V | 180 nC | - 55 C | + 150 C | 30 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TK100L60W,VQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs DTMOSIV 600V 18mOhm 100A 800W 15000pF | 0In Stock | Si | Through Hole | TO-3PL-3 | N-Channel | 1 Channel | 600 V | 100 A | 15 mOhms | 30 V | 3.7 V | 360 nC | - 55 C | + 150 C | 797 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TK8Q60W,S1VQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs DTMOSIV 600V 500mOhm 8A 80W 570pF 18.5nC | 0In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 600 V | 8 A | 420 mOhms | 30 V | 3.7 V | 18.5 nC | - 55 C | + 150 C | 80 W | DTMOSIV | Tube | |||||
0In Stock | Si | SMD/SMT | UF-6 | P-Channel | 1 Channel | 20 V | 4 A | 42.7 mOhms | - 8 V, 6 V | 1 V | 12.8 nC | - 55 C | + 150 C | 1 W | Enhancement | AEC-Q101 | U-MOSVI | Reel | ||||
0In Stock | Si | SMD/SMT | ES6-6 | N-Channel | 1 Channel | 30 V | 1.9 A | 133 mOhms | 12 V | 1 V | 1.9 nC | - 55 C | + 150 C | 500 mW | Enhancement | U-MOSIII | Reel | |||||
0In Stock | Si | SMD/SMT | UF-6 | N-Channel | 1 Channel | 30 V | 500 mA | 145 mOhms | 12 V | 1.1 V | - 55 C | + 150 C | 500 mW | Enhancement | AEC-Q101 | U-MOSIII | Reel |