Toshiba - MOSFETs
3,350 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: TJ50S06M3L(T6L1,NQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs P-Ch MOS -50A -60V 90W 6290pF 0.0138 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 50 A | 13.8 mOhms | - 20 V, 10 V | 3 V | 124 nC | - 55 C | + 175 C | 90 W | Enhancement | AEC-Q100 | U-MOSVI | Reel | |||
Mfr: TK8A50D(STA4,Q,M) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch FET 500V 4.0s IDSS 10 uA 0.7 Ohm | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 8 A | 850 mOhms | - 30 V, 30 V | 2 V | 16 nC | - 55 C | + 150 C | 40 W | Enhancement | MOSVII | Tube | ||||
Mfr: SSM3J133TU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Small-signal MOSFET P-Channel | 0In Stock | Si | SMD/SMT | UFM-3 | P-Channel | 1 Channel | 20 V | 5.5 A | 24.9 mOhms | - 8 V, 8 V | 1 V | 12.8 nC | - 55 C | + 150 C | 1 W | Enhancement | U-MOSVI | Reel | ||||
Mfr: TJ90S04M3L,LXHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 180W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 40 V | 90 A | 4.3 mOhms | - 20 V, 10 V | 2 V | 172 nC | + 175 C | 180 W | Enhancement | AEC-Q101 | Reel | TJ90S04M3L,LXHQ(O | ||||
Mfr: SSM3K344R,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=3A VDSS=20V | 0In Stock | Si | SMD/SMT | SOT-23F-3 | N-Channel | 1 Channel | 20 V | 3 A | 51 mOhms | - 8 V, 8 V | 400 mV | 2 nC | - 55 C | + 150 C | 2 W | Enhancement | U-MOSVII-H | Reel | ||||
Mfr: SSM3K44MFV,L3F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Sm-signal/Hi-Speed VESM (SOT-723) | 0In Stock | Si | SMD/SMT | VESM-3 | N-Channel | 1 Channel | 30 V | 100 mA | 4 Ohms | - 20 V, 20 V | 1.5 V | - 55 C | + 150 C | 150 mW | Enhancement | AEC-Q101 | MOSVI | Reel | ||||
Mfr: TK40A06N1,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs MOSFET NCh 8.4ohm VGS10V10uAVDS60V | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 40 A | 8.4 mOhms | - 20 V, 20 V | 4 V | 23 nC | - 55 C | + 150 C | 30 W | Enhancement | U-MOSVIII-H | Tube | ||||
Mfr: TK42A12N1,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs MOSFET NCh7.8ohm VGS10V10uAVDS120V | 0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 120 V | 42 A | 7.8 mOhms | - 20 V, 20 V | 4 V | 52 nC | - 55 C | + 150 C | 35 W | Enhancement | U-MOSVIII-H | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 8 A | 440 mOhms | - 30 V, 30 V | 3 V | 22 nC | - 55 C | + 150 C | 30 W | Enhancement | DTMOSIV | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 17.3 A | 170 mOhms | - 30 V, 30 V | 2.5 V | 45 nC | - 55 C | + 150 C | 165 W | Enhancement | DTMOSIV | Tube | |||||
0In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 650 V | 7.8 A | 550 mOhms | - 30 V, 30 V | 2.5 V | 16 nC | - 55 C | + 150 C | 80 W | Enhancement | DTMOSIV | Tube | |||||
Mfr: SSM3J118TU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=-1.4A VDSS=-30V | 0In Stock | Si | SMD/SMT | UFM-3 | P-Channel | 1 Channel | 30 V | 1.4 A | 240 mOhms | - 20 V, 20 V | 2.6 V | + 150 C | 800 mW | Enhancement | AEC-Q101 | Reel | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 75 A | 8.2 mOhms | - 20 V, 20 V | 1.5 V | 28 nC | - 55 C | + 175 C | 81 W | Enhancement | U-MOSIX-H | Tube | |||||
Mfr: SSM3K72KFS,LXHF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs AUTO AEC-Q Low Rdson SS MOS N-ch Logic-Level Gate Drive VDSS:60V Ic:0.3A SOT-416 | 0In Stock | Si | SMD/SMT | SSM-3 | N-Channel | 1 Channel | 60 V | 300 mA | 1.65 Ohms | - 20 V, 20 V | 2.1 V | 390 pC | + 150 C | 500 mW | Enhancement | AEC-Q101 | Reel | SSM3K72KFS,LXHF(B | ||||
Mfr: SSM3K376R,LXHF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs SMOS Low RON Nch Id: 4A Vdss: 30V Pd:1W | 0In Stock | Si | SMD/SMT | SOT-23F-3 | N-Channel | 1 Channel | 30 V | 4 A | 56 mOhms | - 8 V, 12 V | 1 V | 2.2 nC | + 150 C | 2 W | Enhancement | AEC-Q101 | Reel | |||||
Mfr: TK3R2A08QM,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs UMOS10 TO-220SIS 80V 3.2mohm | 0In Stock | Si | Through Hole | TO-220SIS-3 | N-Channel | 1 Channel | 80 V | 92 A | 3.2 mOhms | - 20 V, 20 V | 3.5 V | 102 nC | + 175 C | 45 W | Enhancement | Tube | TK3R2A08QM,S4X(S | |||||
Mfr: TK3R3E08QM,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs UMOS10 TO-220AB 80V 3.3mohm | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 80 V | 120 A | 3.3 mOhms | - 20 V, 20 V | 3.5 V | 110 nC | + 175 C | 230 W | Enhancement | Tube | TK3R3E08QM,S1X(S | |||||
Mfr: SSM6N17FU(TE85L,F) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 2-in-1 MOSFET ID=100mA VDSS=50V | 0In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 2 Channel | 50 V | 100 mA | 20 Ohms | - 7 V, 7 V | 900 mV | - 55 C | + 150 C | 200 mW | Enhancement | AEC-Q101 | MOSV | Reel | ||||
Mfr: TK12E80W,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 800V 1400pF 23nC 11.5A 165W | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 11.5 A | 380 mOhms | - 20 V, 20 V | 3 V | 23 nC | - 55 C | + 150 C | 165 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: SSM3J129TU(T5L,T) TTI: Not Assigned Toshiba Availability: Not Available OnlineMOSFETs Small-signal FET 0.137Ohm -4.6A -20V | Not Available Online | Si | SMD/SMT | UFM-3 | P-Channel | 1 Channel | 20 V | 4.6 A | 46 mOhms | - 8 V, 8 V | 4.5 V | 8.1 nC | + 150 C | 500 mW | Enhancement | Reel | ||||||
Mfr: SSM3K106TU(T5L,T) TTI: Not Assigned Toshiba Availability: Not Available OnlineMOSFETs Small-signal FET 1.2A 20V 0.53Ohm | Not Available Online | Si | SMD/SMT | UFM-3 | N-Channel | 1 Channel | 20 V | 1.2 A | 310 mOhms | - 20 V, 20 V | 1.1 V | + 150 C | 800 mW | Enhancement | Reel | |||||||
Mfr: SSM6J206FE,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs SS FET P-Ch 0.32Ohm -2A -8V | 0In Stock | Si | P-Channel | 1 Channel | Reel | |||||||||||||||||
Mfr: TK16G60W,RVQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs DTMOSIV 600V 190mOhm 15.8A 130W 1350pF | 0In Stock | Si | Through Hole | TO-262-3 | N-Channel | 1 Channel | 600 V | 15.8 A | 190 mOhms | - 30 V, 30 V | 3.7 V | 38 nC | - 55 C | + 150 C | 130 W | Enhancement | DTMOSIV | Reel | ||||
Mfr: TK110A65Z,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs MOSFET 650V 110mOhms DTMOS-VI | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 24 A | 110 mOhms | - 30 V, 30 V | 4 V | 40 nC | - 55 C | + 150 C | 45 W | Enhancement | Tube | |||||
Mfr: TK155A65Z,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs MOSFET 650V 155mOhms DTMOS-VI | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 18 A | 155 mOhms | - 30 V, 30 V | 4 V | 23 nC | - 55 C | + 150 C | 40 W | Enhancement | Tube |
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