Toshiba - MOSFETs
3,399 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: SSM3K341TU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=6A VDSS=60V | 0In Stock | Si | SMD/SMT | UFM-3 | N-Channel | 1 Channel | 60 V | 6 A | 28 mOhms | - 20 V, 20 V | 1.5 V | 9.3 nC | - 55 C | + 175 C | 1 W | Enhancement | AEC-Q101 | U-MOSVIII-H | Reel | |||
Mfr: TK1K9A60F,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch TT-MOSIX 600V 30W 490pF 3.7A | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 3.7 A | 1.9 Ohms | - 30 V, 30 V | 2 V | 14 nC | - 55 C | + 150 C | 30 W | Enhancement | MOSIX | Tube | ||||
0In Stock | Si | SMD/SMT | CST3C-3 | P-Channel | 1 Channel | 12 V | 1 A | 370 mOhms | - 10 V, 10 V | 1 V | + 150 C | 500 mW | Enhancement | U-MOSVII | Reel | |||||||
0In Stock | Si | SMD/SMT | CST3C-3 | P-Channel | 1 Channel | 20 V | 700 mA | 500 mOhms | - 10 V, 10 V | 1 V | + 150 C | 500 mW | Enhancement | U-MOSVII | Reel | |||||||
0In Stock | Si | SMD/SMT | SOT-563-6 | P-Channel | 2 Channel | 20 V | 250 mA | 1.4 Ohms | - 10 V, 10 V | 1 V | + 150 C | 250 mW | Enhancement | U-MOSVII | Reel | |||||||
Mfr: SSM3J36TU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Sm-signal/Hi-Speed UFM (SOT-323F) | 0In Stock | Si | SMD/SMT | UFM-3 | P-Channel | 1 Channel | 20 V | 330 mA | 1.31 Ohms | - 8 V, 8 V | 1 V | 1.2 nC | + 150 C | 500 mW | Enhancement | AEC-Q101 | MOSIII | Reel | ||||
Mfr: SSM6N16FE,L3F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Sm-signal/HiSpeed2n1 ES6 (SOT-563) | 0In Stock | Si | SMD/SMT | ES-6 | N-Channel | 2 Channel | 20 V | 100 mA | 3 Ohms | - 10 V, 10 V | 1.1 V | + 150 C | 150 mW | Enhancement | MOSVI | Reel | ||||||
Mfr: TJ40S04M3L,LXHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 68W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 40 V | 40 A | 9.1 mOhms | - 20 V, 10 V | 3 V | 83 nC | + 175 C | 68 W | Enhancement | AEC-Q101 | Reel | TJ40S04M3L,LXHQ(O | ||||
Mfr: TJ60S06M3L,LXHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 100W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 60 A | 11.2 mOhms | - 20 V, 10 V | 3 V | 156 nC | + 175 C | 100 W | Enhancement | AEC-Q101 | Reel | TJ60S06M3L,LXHQ(O | ||||
Mfr: TK1R4S04PB,LXHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 180W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 40 V | 120 A | 1.35 mOhms | - 20 V, 20 V | 3 V | 103 nC | + 175 C | 180 W | Enhancement | AEC-Q101 | Reel | TK1R4S04PB,LXHQ(O | ||||
Mfr: TK49N65W5,S1F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO247(OS) PD=400W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 49.2 A | 57 mOhms | - 30 V, 30 V | 4.5 V | 185 nC | - 55 C | + 150 C | 400 W | Enhancement | DTMOSIV | Tube | ||||
0In Stock | Si | SMD/SMT | UDFN-6 | N-Channel | 1 Channel | 60 V | 2 A | 440 mOhms | - 20 V, 20 V | 2 V | 6 nC | - 55 C | + 150 C | 500 mW | Enhancement | AEC-Q101 | MOSV | Reel | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 60 V | 25 A | 18.5 mOhms | - 20 V, 20 V | 1.5 V | 15 nC | - 55 C | + 175 C | 57 W | Enhancement | AEC-Q101 | U-MOSVIII-H | Reel | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 100 V | 15 A | 130 mOhms | - 20 V, 10 V | 4 V | 69 nC | - 55 C | + 175 C | 75 W | Enhancement | TJ15S10M3,LQ(O | ||||||
Mfr: TK110N65Z,S1F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs MOSFET 650V 110mOhms DTMOS-VI | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 24 A | 110 mOhms | - 30 V, 30 V | 4 V | 40 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | |||||
Mfr: TPH1500CNH1,LQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 150V U-MOS VIII-H SOP-Advance(N) 15.4mohm | 0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 150 V | 38 A | 15.4 mOhms | - 20 V, 20 V | 4 V | 22 nC | - 55 C | + 150 C | 170 W | Enhancement | Reel | |||||
Mfr: TPM1R408RH,LQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 80V 1.4mOhm N-ch MOSFET SOP Advance(E) UMOS -H | 0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 80 V | 288 A | 1.4 mOhms | 20 V | 3.6 V | 80 nC | + 175 C | 250 W | Enhancement | Reel | ||||||
Mfr: TPHR6704RL,LQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-ch MOSFET 40V 0.00067Ohm SOP Advance(N) U-MOS11-H | 0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 40 V | 420 A | 0.67 Ohms | 20 V | 2 V | 88 nC | + 175 C | 210 W | Enhancement | Reel | ||||||
Mfr: XPN27016MC,L1XHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs -60 V 27.3mOhm P-ch MOSFET AEC-Q TSON Advance(WF) | 0In Stock | Si | SMD/SMT | TSON-8 | P-Channel | 1 Channel | 60 V | 25 A | 27.3 mOhms | - 20 V, 10 V | 2.1 V | 71 nC | + 175 C | 100 W | Enhancement | AEC-Q101 | Reel | |||||
Mfr: XK1R9F10QB,LXGQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 375W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | TO-220SM-3 | N-Channel | 1 Channel | 100 V | 160 A | 1.92 mOhms | - 20 V, 20 V | 3.5 V | 184 nC | + 175 C | 375 W | Enhancement | AEC-Q101 | Reel | XK1R9F10QB,LXGQ(O | ||||
0In Stock | Si | SMD/SMT | UFM-3 | P-Channel | 1 Channel | 20 V | 3.2 A | 93 mOhms | - 8 V, 6 V | 1 V | 4.7 nC | + 150 C | 1 W | Enhancement | U-MOSVI | Reel | ||||||
Mfr: TK10A50W,S5X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-220SIS PD=30W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 9.7 A | 380 mOhms | - 30 V, 30 V | 2.7 V | 20 nC | - 55 C | + 150 C | 30 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TK110P10PL,RQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs DPAK-OS PD=75W 1MHz PWR MOSFET TRNS | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 40 A | 16 mOhms | - 20 V, 20 V | 2.5 V | 33 nC | - 55 C | + 175 C | 75 W | Enhancement | U-MOSIX-H | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 18.5 A | 190 mOhms | - 30 V, 30 V | 2.7 V | 38 nC | - 55 C | + 150 C | 40 W | Enhancement | DTMOSIV | Tube | |||||
0In Stock | Si | SMD/SMT | UF-6 | P-Channel | 1 Channel | 20 V | 4 A | 42.7 mOhms | - 8 V, 6 V | 1 V | 12.8 nC | - 55 C | + 150 C | 1 W | Enhancement | AEC-Q101 | U-MOSVI | Reel |