Toshiba - MOSFETs
3,350 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SSM6L35FU(TE85L,F) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch Sm Sig FET 0.1A -0.1A 20V 2-in1 | 0In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel, P-Channel | 2 Channel | 20 V | 100 mA, 180 mA | 11 Ohms | - 10 V, 10 V | 1 V | - 55 C | + 150 C | 200 mW | Enhancement | AEC-Q101 | MOSVI | Reel | ||||
Mfr: TJ10S04M3L,LXHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 27W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 40 V | 10 A | 44 mOhms | - 20 V, 10 V | 3 V | 19 nC | + 175 C | 27 W | Enhancement | AEC-Q101 | Reel | TJ10S04M3L,LXHQ(O | ||||
0In Stock | Si | SMD/SMT | UF-6 | P-Channel | 1 Channel | 20 V | 4 A | 42.7 mOhms | - 8 V, 6 V | 1 V | 12.8 nC | - 55 C | + 150 C | 1 W | Enhancement | AEC-Q101 | U-MOSVI | Reel | ||||
0In Stock | Si | SMD/SMT | UF-6 | N-Channel | 1 Channel | 30 V | 500 mA | 145 mOhms | - 12 V, 12 V | 1.1 V | - 55 C | + 150 C | 500 mW | Enhancement | AEC-Q101 | U-MOSIII | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 250 V | 7.5 A | 500 mOhms | - 20 V, 20 V | 1.5 V | 16 nC | - 55 C | + 150 C | 30 W | Enhancement | MOSVII | Tube | |||||
Mfr: TK110P10PL,RQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs DPAK-OS PD=75W 1MHz PWR MOSFET TRNS | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 40 A | 16 mOhms | - 20 V, 20 V | 2.5 V | 33 nC | - 55 C | + 175 C | 75 W | Enhancement | U-MOSIX-H | Reel | ||||
Mfr: XK1R9F10QB,LXGQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 375W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | TO-220SM-3 | N-Channel | 1 Channel | 100 V | 160 A | 1.92 mOhms | - 20 V, 20 V | 3.5 V | 184 nC | + 175 C | 375 W | Enhancement | AEC-Q101 | Reel | XK1R9F10QB,LXGQ(O | ||||
Mfr: TK290P65Y,RQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch DTMOSV 650V 100W 730pF 11.5A | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 650 V | 11.5 A | 290 mOhms | - 30 V, 30 V | 4 V | 25 nC | - 55 C | + 150 C | 100 W | Enhancement | DTMOSV | Reel | ||||
Mfr: SSM3K361TU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=3.5A VDSS=100V | 0In Stock | Si | SMD/SMT | UFM-3 | N-Channel | 1 Channel | 100 V | 3.5 A | 51 mOhms | - 20 V, 20 V | 1.5 V | 3.2 nC | - 55 C | + 175 C | 1 W | Enhancement | AEC-Q101 | U-MOSVIII-H | Reel | |||
0In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 2 Channel | 20 V | 500 mA | 460 mOhms, 460 mOhms | - 20 V, 20 V | 350 mV | 1.23 nC | - 55 C | + 150 C | 200 mW | Enhancement | AEC-Q101 | MOSVI | Reel | ||||
Mfr: TK39N60W,S1VF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs DTMOSIV 600V 65mOhm 38.8A 270W 4100pF | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 38.8 A | 55 mOhms | - 30 V, 30 V | 3.7 V | 110 nC | - 55 C | + 150 C | 270 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: SSM3K16CT,L3F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=0.1A VDSS=20V | 0In Stock | Si | SMD/SMT | SOT-883-3 | N-Channel | 1 Channel | 20 V | 100 mA | 3 Ohms | - 10 V, 10 V | 600 mV | - 55 C | + 150 C | 100 mW | Enhancement | MOSVI | Reel | |||||
Mfr: SSM3K16FS,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=0.1A VDSS=20V | 0In Stock | Si | SMD/SMT | SOT-416-3 | N-Channel | 1 Channel | 20 V | 100 mA | 3 Ohms | - 10 V, 10 V | 600 mV | + 150 C | 100 mW | Enhancement | AEC-Q101 | MOSVI | Reel | |||||
Mfr: SSM3K7002KF,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Small-signal Nch MOSFET ID:0.4A | 0In Stock | Si | SMD/SMT | SOT-346-3 | N-Channel | 1 Channel | 60 V | 400 mA | 1.05 Ohms | - 20 V, 20 V | 1.1 V | 390 pC | - 55 C | + 150 C | 900 mW | Enhancement | AEC-Q101 | U-MOSVII-H | Reel | |||
Mfr: SSM6P35FE,LM TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Small-signal MOSFET P-Channel | 0In Stock | Si | SMD/SMT | ES6-6 | MOSVI | Reel | ||||||||||||||||
Mfr: SSM6J214FE(TE85L,F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=-3.6A VDSS=-30V | 0In Stock | Si | SMD/SMT | SOT-563-6 | P-Channel | 1 Channel | 30 V | 3.6 A | 50 mOhms | - 12 V, 12 V | 1.2 V | 7.9 nC | - 55 C | + 150 C | 700 mW | Enhancement | U-MOSVI | Reel | ||||
Mfr: TK12A80W,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 800V 1400pF 23nC 11.5A 45W | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 11.5 A | 380 mOhms | - 20 V, 20 V | 3 V | 23 nC | - 55 C | + 150 C | 45 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TK8S06K3L(T6L1,NQ) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch MOS 8A 60V 25W 400pF 0.054 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 60 V | 8 A | 54 mOhms | - 20 V, 20 V | 2 V | 10 nC | - 55 C | + 175 C | 25 W | Enhancement | AEC-Q100 | U-MOSIV | Reel | |||
Mfr: SSM6J213FE(TE85L,F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs P-Ch U-MOS VI FET ID -2.6A -20V 290pF | 0In Stock | Si | SMD/SMT | ES6-6 | P-Channel | 1 Channel | 20 V | 2.6 A | 250 mOhms | - 8 V, 8 V | 1 V | 4.7 nC | - 55 C | + 150 C | 500 mW | Enhancement | U-MOSVI | Reel | ||||
Mfr: TK62J60W,S1VQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 61.8A 400W FET 600V 3500pF 180nC | 0In Stock | Si | Through Hole | TO-3PN-3 | N-Channel | 1 Channel | 600 V | 61.8 A | 33 mOhms | - 30 V, 30 V | 3.7 V | 180 nC | - 55 C | + 150 C | 30 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TPN2R703NL,L1Q TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs X35PBF Power MOSFET Trans VGS4.5VVDS30V | 0In Stock | Si | SMD/SMT | TSON-8 | N-Channel | 1 Channel | 30 V | 45 A | 3.3 mOhms | - 20 V, 20 V | 2.3 V | 21 nC | - 55 C | + 150 C | 42 W | Enhancement | U-MOSVIII-H | Reel | ||||
0In Stock | Si | SMD/SMT | ES6-6 | N-Channel, P-Channel | 2 Channel | 20 V | 100 mA, 180 mA | 20 Ohms, 44 Ohms | - 10 V, 10 V | 400 mV | - 55 C | + 150 C | 150 mW | Enhancement | AEC-Q101 | MOSVI | Reel | |||||
Mfr: SSM6N56FE,LM TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Small-signal MOSFET N-Channel | 0In Stock | Si | SMD/SMT | ES6-6 | N-Channel | 2 Channel | 20 V | 800 mA | 235 mOhms, 235 mOhms | - 8 V, 8 V | 400 mV | 1 nC | - 55 C | + 150 C | 250 mW | Enhancement | U-MOSVII-H | Reel | ||||
0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 38 V | 2 A | 150 mOhms | - 20 V, 20 V | 700 mV | 3 nC | - 55 C | + 150 C | 1 W | Enhancement | AEC-Q101 | U-MOSIV | Reel | ||||
Mfr: SSM6P15FE(TE85L,F) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=-.1A VDSS=-30V | 0In Stock | Si | SMD/SMT | ES6-6 | P-Channel | 2 Channel | 30 V | 100 mA | 8 Ohms | - 20 V, 20 V | 1.7 V | - 55 C | + 150 C | 150 mW | Enhancement | AEC-Q100 | MOSVI | Reel |
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