Toshiba - MOSFETs
3,835 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: TK100L60W,VQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs DTMOSIV 600V 18mOhm 100A 800W 15000pF | 0In Stock | Si | Through Hole | TO-3PL-3 | N-Channel | 1 Channel | 600 V | 100 A | 15 mOhms | 30 V | 3.7 V | 360 nC | - 55 C | + 150 C | 797 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TK8Q60W,S1VQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs DTMOSIV 600V 500mOhm 8A 80W 570pF 18.5nC | 0In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 600 V | 8 A | 420 mOhms | 30 V | 3.7 V | 18.5 nC | - 55 C | + 150 C | 80 W | DTMOSIV | Tube | |||||
0In Stock | Si | SMD/SMT | UF-6 | P-Channel | 1 Channel | 20 V | 4 A | 42.7 mOhms | - 8 V, 6 V | 1 V | 12.8 nC | - 55 C | + 150 C | 1 W | Enhancement | AEC-Q101 | U-MOSVI | Reel | ||||
0In Stock | Si | SMD/SMT | ES6-6 | N-Channel | 1 Channel | 30 V | 1.9 A | 133 mOhms | 12 V | 1 V | 1.9 nC | - 55 C | + 150 C | 500 mW | Enhancement | U-MOSIII | Reel | |||||
0In Stock | Si | SMD/SMT | UF-6 | N-Channel | 1 Channel | 30 V | 500 mA | 145 mOhms | 12 V | 1.1 V | - 55 C | + 150 C | 500 mW | Enhancement | AEC-Q101 | U-MOSIII | Reel | |||||
0In Stock | Si | SMD/SMT | UF-6 | P-Channel | 1 Channel | 20 V | 1.5 A | 213 mOhms | 8 V | 1 V | 6.4 nC | - 55 C | + 150 C | 500 mW | Enhancement | AEC-Q101 | U-MOSIII | Reel | ||||
Mfr: TJ10S04M3L,LXHQ TTI: Not Assigned Toshiba Availability: Not Available OnlineMOSFETs 27W 1MHz Automotive; AEC-Q101 | Not Available Online | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 40 V | 10 A | 44 mOhms | - 20 V, 10 V | 3 V | 19 nC | + 175 C | 27 W | Enhancement | AEC-Q101 | Reel | TJ10S04M3L,LXHQ(O | ||||
Mfr: TJ60S04M3L,LXHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 90W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 40 V | 60 A | 6.3 mOhms | - 20 V, 10 V | 3 V | 125 nC | + 175 C | 90 W | Enhancement | AEC-Q101 | Reel | TJ60S04M3L,LXHQ(O | ||||
Mfr: TK10A50W,S5X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-220SIS PD=30W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 9.7 A | 380 mOhms | 30 V | 2.7 V | 20 nC | - 55 C | + 150 C | 30 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TK380A65Y,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-220SIS PD=30W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 9.7 A | 380 mOhms | 30 V | 4 V | 20 nC | - 55 C | + 150 C | 30 W | Enhancement | DTMOSV | Tube | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 4 A | 1.7 Ohms | 30 V | 2.4 V | 12 nC | - 55 C | + 150 C | 100 W | Enhancement | MOSVII | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 900 V | 4.5 A | 3.1 Ohms | 30 V | 2.5 V | 20 nC | - 55 C | + 150 C | 40 W | Enhancement | MOSVII | Tube | |||||
Mfr: SSM6K204FE,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=2A VDSS=20V | 0In Stock | Si | SMD/SMT | ES-6 | N-Channel | 1 Channel | 20 V | 2 A | 126 mOhms | 10 V | 350 mV | 3.4 nC | - 55 C | + 150 C | 500 mW | Enhancement | U-MOSIII | Reel | ||||
Not Available Online | Si | Reel | ||||||||||||||||||||
0In Stock | Si | SMD/SMT | UFM-3 | P-Channel | 1 Channel | 20 V | 3.2 A | 93 mOhms | - 8 V, 6 V | 1 V | 4.7 nC | + 150 C | 1 W | Enhancement | U-MOSVI | Reel | ||||||
Mfr: TK099E60Z1,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 600 V 0.099 Ohm N-ch MOSFET TO-220 DTMOS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 25 A | 99 mOhms | 30 V | 4 V | 36 nC | + 150 C | 176 W | Enhancement | Tube | ||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 25 A | 99 mOhms | 30 V | 36 nC | + 150 C | 176 W | Enhancement | Tube | ||||||||
Mfr: XPH3R908QB,L1XHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs POWER MOSFET TRANSISTOR SOP Advance(WF) PD=132W F=1MHZ | 0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 80 V | 80 A | 5.7 mOhms | 20 V | 3.5 V | 63 nC | + 175 C | 132 W | Enhancement | AEC-Q101 | Reel | |||||
Mfr: XPMR5904PB,LXHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 40V 0.59mOhm N-ch MOSFET AEC-Q SOP Advance(EWF) | 0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 40 V | 478 A | 0.59 mOhms | 20 V | 3 V | 61 nC | + 175 C | 272 W | Enhancement | AEC-Q101 | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 250 V | 7.5 A | 500 mOhms | 20 V | 1.5 V | 16 nC | - 55 C | + 150 C | 30 W | Enhancement | MOSVII | Tube | |||||
Mfr: SSM6P36TU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Sm-signal/HiSpeed2n1 UF6 (SOT-363F) | 0In Stock | Si | SMD/SMT | UF-6 | P-Channel | 2 Channel | 20 V | 330 mA | 1.31 Ohms | 8 V | 1 V | 1.2 nC | + 150 C | 500 mW | Enhancement | AEC-Q101 | MOSIII | Reel | ||||
Mfr: SSM6J422TU,LXHF TTI: Not Assigned Toshiba Availability: Not Available OnlineMOSFETs SMOS P-ch VDSS=-20V, VGSS=+6/-8V, ID=-4. | Not Available Online | Si | SMD/SMT | UF6-6 | P-Channel | 1 Channel | 20 V | 4 A | 42.7 mOhms | - 8 V, 6 V | 1 V | 12.8 nC | + 150 C | 1 W | Enhancement | AEC-Q101 | Reel | |||||
0In Stock | Si | SMD/SMT | UFM-3 | P-Channel | 1 Channel | 30 V | 2 A | 160 mOhms | 20 V | - 55 C | + 150 C | 800 mW | Enhancement | Reel | ||||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 5 A | 1.5 Ohms | 30 V | 2.4 V | 11 nC | - 55 C | + 150 C | 35 W | Enhancement | Tube | ||||||
Mfr: TK8A50D(STA4,Q,M) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch FET 500V 4.0s IDSS 10 uA 0.7 Ohm | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 8 A | 850 mOhms | 30 V | 2 V | 16 nC | - 55 C | + 150 C | 40 W | Enhancement | MOSVII | Tube |
