Toshiba - MOSFETs
3,399 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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Mfr: SSM6N61NU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Small-signal MOSFET 2 in 1 Nch ID: 4A | 0In Stock | Si | SMD/SMT | UDFN-6 | N-Channel | 2 Channel | 20 V | 4 A | 108 mOhms | - 8 V, 8 V | 400 mV | 3.6 nC | - 55 C | + 150 C | 2 W | Enhancement | AEC-Q101 | U-MOSVII-H | Reel | ||
Mfr: SSM3K72CTC,L3F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Small-signal MOSFET VDSS=60V, ID=0.15A | 0In Stock | Si | SMD/SMT | CST3-3 | N-Channel | 1 Channel | 60 V | 150 mA | 2.8 Ohms | - 20 V, 20 V | 1.1 V | 350 pC | - 55 C | + 150 C | 500 mW | Enhancement | U-MOSVII-H | Reel | |||
Mfr: TK042Z65Z5,S1F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 600 V 0.042 Ohm N-ch MOSFET TO-247-4L(X) DTMOS | 0In Stock | Si | Through Hole | TO-247-4 | N-Channel | 1 Channel | 600 V | 55 A | 42 mOhms | 30 V | 4.5 V | 105 nC | + 150 C | 360 W | Enhancement | Tube | |||||
Mfr: TK063Z60Z1,S1F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 600 V 0.063 Ohm N-ch MOSFET TO-247-4L(X) DTMOS | 0In Stock | Si | Through Hole | TO-247-4 | N-Channel | 1 Channel | 600 V | 37 A | 63 mOhms | 30 V | 4 V | 56 nC | + 150 C | 242 W | Enhancement | Tube | |||||
Mfr: TK068Z65Z5,S1F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 650 V 0.068 Ohm N-ch MOSFET TO-247-4L(X) DTMOS | 0In Stock | Si | Through Hole | TO-247-4 | N-Channel | 1 Channel | 650 V | 37 A | 68 mOhms | 30 V | 4.5 V | 68 nC | + 150 C | 270 W | Enhancement | Tube | |||||
Mfr: TK20E60W5,S1VX TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-220 PD=165W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 20 A | 175 mOhms | - 30 V, 30 V | 4.5 V | 55 nC | - 55 C | + 150 C | 165 W | Enhancement | DTMOSIV | Tube | |||
Mfr: TPH3R704PC,LQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs SOP-ADV PD=90W 1MHz PWR MOSFET TRNS | 0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 40 V | 82 A | 5.8 mOhms | - 20 V, 20 V | 2.4 V | 47 nC | - 55 C | + 175 C | 90 W | Enhancement | U-MOSIX-H | Reel | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 37 A | 63 mOhms | 30 V | 4 V | 56 nC | + 150 C | 242 W | Enhancement | Tube | ||||||
Mfr: TK024Z60Z1,S1F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 600 V 0.024 Ohm N-ch MOSFET TO-247-4L(X) DTMOS | 0In Stock | Si | Through Hole | TO-247-4 | N-Channel | 1 Channel | 600 V | 80 A | 24 mOhms | 30 V | 4 V | 140 nC | + 150 C | 506 W | Enhancement | Tube | |||||
Mfr: XPJ1R504PB,LXHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 40V 1.54mOhm N-ch MOSFET AEC-Q S-TOGL | 0In Stock | Si | SMD/SMT | S-TOGL-6 | N-Channel | 1 Channel | 40 V | 120 A | 1.54 mOhms | 20 V | 3 V | 61 nC | + 175 C | 197 W | Enhancement | AEC-Q101 | Reel | ||||
Mfr: SSM6J216FE,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=--4.8A VDSS=-12V | 0In Stock | Si | SMD/SMT | SOT-563-6 | P-Channel | 1 Channel | 12 V | 4.8 A | 26 mOhms | - 8 V, 8 V | 1 V | 12.7 nC | - 55 C | + 150 C | 700 mW | Enhancement | U-MOSVI | Reel | |||
Mfr: TK28N65W5,S1F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-247(OS) PD=230W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 27.6 A | 130 mOhms | - 30 V, 30 V | 4.5 V | 90 nC | - 55 C | + 150 C | 230 W | Enhancement | DTMOSIV | Tube | |||
Mfr: TK110A10PL,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-220SIS PD=36W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 36 A | 16 mOhms | - 20 V, 20 V | 2.5 V | 33 nC | - 55 C | + 175 C | 36 W | Enhancement | U-MOSIX-H | Tube | |||
Mfr: TK110E10PL,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-220 PD=87W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 42 A | 16 mOhms | - 20 V, 20 V | 2.5 V | 33 nC | - 55 C | + 175 C | 87 W | Enhancement | U-MOSIX-H | Tube | |||
Mfr: TK16J60W,S1VE TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-3PN PD=130W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-3PN-3 | N-Channel | 1 Channel | 600 V | 15.8 A | 190 mOhms | - 30 V, 30 V | 3.7 V | 38 nC | - 55 C | + 150 C | 130 W | Enhancement | DTMOSIV | Tray | |||
Mfr: TK1K7A60F,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-220SIS PD=35W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 4 A | 1.7 Ohms | - 30 V, 30 V | 4 V | 16 nC | - 55 C | + 150 C | 35 W | Enhancement | MOSIX | Tube | |||
Mfr: TK5R3A06PL,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-220SIS PD=36W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 56 A | 200 mOhms | - 20 V, 20 V | 3.5 V | 45 nC | - 55 C | + 150 C | 45 W | Enhancement | U-MOSIX-H | Tube | |||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 500 V | 9.7 A | 430 mOhms | - 30 V, 30 V | 2.7 V | 20 nC | - 55 C | + 150 C | 80 W | Enhancement | DTMOSVI | Reel | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 30 A | 65 mOhms | - 30 V, 30 V | 4 V | 62 nC | - 55 C | + 150 C | 270 W | Enhancement | DTMOSVI | Reel | ||||
0In Stock | Si | SMD/SMT | UFM-3 | P-Channel | 1 Channel | 20 V | 3 A | 103 mOhms | - 8 V, 6 V | 1 V | 4.6 nC | + 150 C | 1 W | Enhancement | AEC-Q101 | U-MOSVI | Reel | ||||
Mfr: TK155A65Z,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs MOSFET 650V 155mOhms DTMOS-VI | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 18 A | 155 mOhms | - 30 V, 30 V | 4 V | 23 nC | - 55 C | + 150 C | 40 W | Enhancement | Tube | ||||
Mfr: SSM3J377R,LXHF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs P Channel -20V -3.9A AECQ MOSFET | 0In Stock | Si | SMD/SMT | SOT-23F-3 | P-Channel | 1 Channel | 20 V | 3.9 A | 93 mOhms | - 8 V, 6 V | 1 V | 4.6 nC | - 55 C | + 150 C | 2 W | Enhancement | AEC-Q101 | Reel | |||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 8 A | 440 mOhms | - 30 V, 30 V | 3 V | 22 nC | - 55 C | + 150 C | 30 W | Enhancement | DTMOSIV | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 17.3 A | 170 mOhms | - 30 V, 30 V | 2.5 V | 45 nC | - 55 C | + 150 C | 165 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TK12E80W,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 800V 1400pF 23nC 11.5A 165W | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 11.5 A | 380 mOhms | - 20 V, 20 V | 3 V | 23 nC | - 55 C | + 150 C | 165 W | Enhancement | DTMOSIV | Tube |