Toshiba - MOSFETs
3,378 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: TK20J60W,S1VE TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-3PN PD=165W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-3PN-3 | N-Channel | 1 Channel | 600 V | 20 A | 155 mOhms | - 30 V, 30 V | 3.7 V | 48 nC | - 55 C | + 150 C | 165 W | Enhancement | DTMOSIV | Tray | ||||
0In Stock | Si | SMD/SMT | TSOP-6F | N-Channel, P-Channel | 2 Channel | 20 V, 30 V | 4 A | 39.1 mOhms, 45 mOhms | - 12 V, - 8 V, 6 V, 12 V | 1 V, 1.2 V | 3.2 nC, 6.7 nC | + 150 C | 1.8 W | Enhancement | AEC-Q101 | Reel | ||||||
0In Stock | Si | SMD/SMT | TSON-8 | P-Channel | 1 Channel | 30 V | 23 A | 7.8 mOhms | - 25 V, 20 V | 800 mV | 76 nC | - 55 C | + 150 C | 30 W | Enhancement | U-MOSVI | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 900 V | 2.5 A | 4.6 Ohms | - 30 V, 30 V | 2.5 V | 15 nC | - 55 C | + 150 C | 35 W | Enhancement | MOSVIII | Tube | |||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 800 V | 3 A | 4.9 Ohms | - 30 V, 30 V | 2.5 V | 12 nC | - 55 C | + 150 C | 80 W | Enhancement | MOSVIII | Reel | |||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 40 V | 90 A | 4.3 mOhms | - 20 V, 10 V | 1 V | 172 nC | - 55 C | + 175 C | 180 W | Enhancement | U-MOSVI | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 300 V | 18 A | 139 mOhms | - 20 V, 20 V | 1.5 V | 60 nC | - 55 C | + 150 C | 45 W | Enhancement | MOSVII | Tube | |||||
Mfr: TK9A60D(STA4,Q,M) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch MOS 9A 600V 45W 1200pF 0.83 | 0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 600 V | 9 A | 830 mOhms | 45 W | MOSVII | Tube | ||||||||||
0In Stock | Si | Through Hole | TO-247-4 | N-Channel | 1 Channel | 650 V | 57 A | 40 mOhms | - 30 V, 30 V | 4 V | 105 nC | - 55 C | + 150 C | 360 W | Enhancement | DTMOSVI | Reel | |||||
Mfr: TK90S06N1L,LQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs UMOSVIII 60V 3.3m max(VGS=10V) DPAK | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 60 V | 90 A | 5.2 mOhms | - 20 V, 20 V | 1.5 V | 81 nC | - 55 C | + 175 C | 100 W | Enhancement | AEC-Q101 | U-MOSVIII-H | Reel | |||
Mfr: TK2Q60D(Q) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch MOS 2A 600V 60W 280pF 4.3 Ohm | 0In Stock | Si | Through Hole | PW-Mold2-3 | N-Channel | 1 Channel | 600 V | 2 A | 4.3 Ohms | - 30 V, 30 V | 2.4 V | 7 nC | - 55 C | + 150 C | 60 W | Enhancement | MOSVII | Reel | ||||
Not Available Online | Si | SMD/SMT | TO-220-3 | N-Channel | 1 Channel | 100 V | 160 A | 2.4 mOhms | - 20 V, 20 V | 3.5 V | 122 nC | 375 W | Enhancement | |||||||||
Mfr: TK1R5R04PB,LXGQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 205W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 40 V | 160 A | 1.5 mOhms | - 20 V, 20 V | 3 V | 103 nC | + 175 C | 205 W | Enhancement | AEC-Q101 | Reel | TK1R5R04PB,LXGQ(O | ||||
Mfr: TK40S06N1L,LXHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 2W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 60 V | 40 A | 10.5 mOhms | - 20 V, 20 V | 2.5 V | 26 nC | + 175 C | 88.2 W | Enhancement | AEC-Q101 | Reel | TK40S06N1L,LXHQ(O | ||||
Mfr: XPN7R104NC,L1XHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 65W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | TSON-Advance-8 | N-Channel | 1 Channel | 40 V | 20 A | 7.1 mOhms | - 20 V, 20 V | 2.5 V | 21 nC | + 175 C | 65 W | Enhancement | AEC-Q101 | Reel | XPN7R104NC,L1XHQ(O | ||||
0In Stock | Si | SMD/SMT | TO-220SM-3 | N-Channel | 1 Channel | 40 V | 250 A | 740 uOhms | - 20 V, 20 V | 3 V | 227 nC | - 55 C | + 175 C | 375 W | Enhancement | AEC-Q101 | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 80 V | 64 A | 7 mOhms | - 20 V, 20 V | 3.5 V | 39 nC | + 175 C | 87 W | Enhancement | Tube | TK7R0E08QM,S1X(S | ||||||
0In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 30 V | - 20 V, 20 V | 2.3 V | 17.3 nC | + 150 C | 1.51 W | Enhancement | Reel | ||||||||||
0In Stock | Si | Reel | ||||||||||||||||||||
0In Stock | Si | Through Hole | TO-220SIS-3 | N-Channel | 1 Channel | 600 V | 30 A | 80 mOhms | 30 V | 4 V | 43 nC | + 150 C | 45 W | Enhancement | Tube | |||||||
0In Stock | Si | SMD/SMT | TOLL-9 | N-Channel | 1 Channel | 600 V | 25 A | 99 mOhms | 30 V | 4 V | 36 nC | + 150 C | 176 W | Enhancement | Reel | |||||||
0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 100 V | 190 A | 2.7 mOhms | 20 V | 4.3 V | 52 nC | + 175 C | 210 W | Enhancement | Reel | |||||||
Mfr: SSM6K810R,LXHF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs AUTO AEC-Q SS MOS N-ch Logic-Level Gate Drive VDSS:100V IC:3.5A PD:1.5W TSOP6F | 0In Stock | Si | SMD/SMT | TSOP6F | N-Channel | 1 Channel | 100 V | 3.5 A | 51 mOhms | - 20 V, 20 V | 2.5 V | 3.2 nC | + 175 C | 1.5 W | Enhancement | AEC-Q101 | Reel | SSM6K810R,LXHF(B | ||||
Mfr: SSM3J35AFS,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=-.25A VDSS=-20V | 0In Stock | Si | SMD/SMT | SOT-416-3 | P-Channel | 1 Channel | 20 V | 250 mA | 1.1 Ohms | - 10 V, 10 V | 1 V | - 55 C | + 150 C | 500 mW | Enhancement | U-MOSVII | Reel | |||||
0In Stock | Si | SMD/SMT | SOT-23F-3 | P-Channel | 1 Channel | 30 V | 4 A | 71 mOhms | - 20 V, 10 V | 2 V | 5.9 nC | - 55 C | + 150 C | 2 W | Enhancement | AEC-Q101 | U-MOSVI | Reel |
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