Toshiba - MOSFETs
3,378 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: TK40A06N1,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs MOSFET NCh 8.4ohm VGS10V10uAVDS60V | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 40 A | 8.4 mOhms | - 20 V, 20 V | 4 V | 23 nC | - 55 C | + 150 C | 30 W | Enhancement | U-MOSVIII-H | Tube | ||||
Mfr: TK42A12N1,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs MOSFET NCh7.8ohm VGS10V10uAVDS120V | 0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 120 V | 42 A | 7.8 mOhms | - 20 V, 20 V | 4 V | 52 nC | - 55 C | + 150 C | 35 W | Enhancement | U-MOSVIII-H | Tube | ||||
Mfr: TK40A10N1,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs MOSFET NCh6.8ohm VGS10V10uAVDS100V | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 40 A | 6.8 mOhms | - 20 V, 20 V | 4 V | 49 nC | - 55 C | + 150 C | 35 W | Enhancement | U-MOSVIII-H | Tube | ||||
Mfr: TK58A06N1,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs MOSFET NCh 4.4ohm VGS10V10uAVDS60V | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 58 A | 4.4 mOhms | - 20 V, 20 V | 4 V | 46 nC | - 55 C | + 150 C | 35 W | Enhancement | U-MOSVIII-H | Tube | ||||
Mfr: TPN2010FNH,L1Q TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs UMOSVIII 250V 200m (VGS=10V) TSON-ADV | 0In Stock | Si | SMD/SMT | TSON-8 | N-Channel | 1 Channel | 250 V | 9.9 A | 168 mOhms | - 20 V, 20 V | 4 V | 7 nC | - 55 C | + 150 C | 39 W | Enhancement | U-MOSVIII-H | Reel | ||||
Mfr: SSM3K106TU(T5L,T) TTI: Not Assigned Toshiba Availability: Not Available OnlineMOSFETs Small-signal FET 1.2A 20V 0.53Ohm | Not Available Online | Si | SMD/SMT | UFM-3 | N-Channel | 1 Channel | 20 V | 1.2 A | 310 mOhms | - 20 V, 20 V | 1.1 V | + 150 C | 800 mW | Enhancement | Reel | |||||||
Mfr: SSM6J206FE,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs SS FET P-Ch 0.32Ohm -2A -8V | 0In Stock | Si | P-Channel | 1 Channel | Reel | |||||||||||||||||
0In Stock | Si | SMD/SMT | ES6-6 | N-Channel | 2 Channel | 20 V | 180 mA | 20 Ohms, 20 Ohms | - 10 V, 10 V | 400 mV | - 55 C | + 150 C | 150 mW | Enhancement | MOSVI | Reel | ||||||
Mfr: TK16G60W,RVQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs DTMOSIV 600V 190mOhm 15.8A 130W 1350pF | 0In Stock | Si | Through Hole | TO-262-3 | N-Channel | 1 Channel | 600 V | 15.8 A | 190 mOhms | - 30 V, 30 V | 3.7 V | 38 nC | - 55 C | + 150 C | 130 W | Enhancement | DTMOSIV | Reel | ||||
Mfr: TJ30S06M3L(T6L1,NQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs P-Ch MOS -30A -60V 68W 3950pF 0.0218 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 30 A | 21.8 mOhms | - 20 V, 10 V | 3 V | 80 nC | - 55 C | + 175 C | 68 W | Enhancement | AEC-Q100 | U-MOSVI | Reel | |||
Mfr: TK12A55D(STA4,Q,M) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch MOS 12A 550V 45W 1550pF 0.57 | 0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 550 V | 12 A | 570 mOhms | 45 W | MOSVII | Tube | ||||||||||
Mfr: TK12A60D(STA4,Q,M) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch MOS 12A 600V 45W 1800pF 0.55 | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 12 A | 550 mOhms | - 30 V, 30 V | 2 V | 38 nC | - 55 C | + 150 C | 45 W | Enhancement | MOSVII | Tube | ||||
Mfr: TK3P50D,RQ(S TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch MOS 3A 500V 60W 280pF 3 Ohm | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 500 V | 3 A | 3 Ohms | - 30 V, 30 V | 2.4 V | 7 nC | - 55 C | + 150 C | 60 W | Enhancement | MOSVII | Reel | ||||
Mfr: TK5A53D(STA4,Q,M) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch MOS 5A 525V 35W 540pF 1.5 OhM | 0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 525 V | 5 A | 1.5 Ohms | 35 W | MOSVII | Tube | ||||||||||
Mfr: TK7A50D(STA4,Q,M) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch MOS 7A 500V 35W 600pF 1.22 | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 7 A | 1 Ohms | - 30 V, 30 V | 4.4 V | 12 nC | - 55 C | + 150 C | 35 W | Enhancement | MOSVII | Tube | ||||
Mfr: TK8A45D(STA4,Q,M) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch MOS 8A 450V 35W 700pF 0.9 Ohm | 0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 450 V | 8 A | 900 mOhms | - 30 V, 30 V | 4.4 V | 16 nC | - 55 C | + 150 C | 35 W | Enhancement | MOSVII | Tube | ||||
Mfr: TK5A65DA(STA4,Q,M) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch MOS 4.5A 650V 35W 700pF 1.67 Ohm | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 5 A | 1.67 Ohms | - 30 V, 30 V | 2.4 V | 16 nC | - 55 C | + 150 C | 35 W | Enhancement | MOSVII | Tube | ||||
Mfr: SSM3K72CTC,L3F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Small-signal MOSFET VDSS=60V, ID=0.15A | 0In Stock | Si | SMD/SMT | CST3-3 | N-Channel | 1 Channel | 60 V | 150 mA | 2.8 Ohms | - 20 V, 20 V | 1.1 V | 350 pC | - 55 C | + 150 C | 500 mW | Enhancement | U-MOSVII-H | Reel | ||||
Mfr: SSM6N61NU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Small-signal MOSFET 2 in 1 Nch ID: 4A | 0In Stock | Si | SMD/SMT | UDFN-6 | N-Channel | 2 Channel | 20 V | 4 A | 108 mOhms | - 8 V, 8 V | 400 mV | 3.6 nC | - 55 C | + 150 C | 2 W | Enhancement | AEC-Q101 | U-MOSVII-H | Reel | |||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 25 A | 105 mOhms | - 30 V, 30 V | 2.5 V | 40 nC | - 55 C | + 150 C | 180 W | Enhancement | DTMOSIV-H | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 25 A | 105 mOhms | - 30 V, 30 V | 2.5 V | 40 nC | - 55 C | + 150 C | 180 W | Enhancement | DTMOSIV-H | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 20 A | 150 mOhms | - 30 V, 30 V | 3 V | 55 nC | - 55 C | + 150 C | 165 W | Enhancement | DTMOSIV | Tube | |||||
Mfr: TPW1R005PL,L1Q TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs POWER MOSFET TRANSISTOR PD=170W | 0In Stock | Si | SMD/SMT | DSOP-8 | N-Channel | 1 Channel | 45 V | 300 A | 1.65 mOhms | - 20 V, 20 V | 1.4 V | 122 nC | - 55 C | + 175 C | 170 W | Enhancement | U-MOSIX-H | Reel | ||||
Mfr: SSM6N17FU(TE85L,F) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 2-in-1 MOSFET ID=100mA VDSS=50V | 0In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 2 Channel | 50 V | 100 mA | 20 Ohms | - 7 V, 7 V | 900 mV | - 55 C | + 150 C | 200 mW | Enhancement | AEC-Q101 | MOSV | Reel | ||||
Mfr: TK3R2A08QM,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs UMOS10 TO-220SIS 80V 3.2mohm | 0In Stock | Si | Through Hole | TO-220SIS-3 | N-Channel | 1 Channel | 80 V | 92 A | 3.2 mOhms | - 20 V, 20 V | 3.5 V | 102 nC | + 175 C | 45 W | Enhancement | Tube | TK3R2A08QM,S4X(S |
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