Toshiba - MOSFETs
3,399 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: TK7A60W,S4VX TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 7A 30W FET 600V 490pF 15nC | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 7 A | 600 mOhms | - 30 V, 30 V | 2.7 V | 15 nC | - 55 C | + 150 C | 30 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TK49N65W,S1F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch Power MOSFET Transistor | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 49.2 A | 55 mOhms | - 30 V, 30 V | 2.5 V | 160 nC | + 150 C | 400 W | Enhancement | Tube | ||||||
Mfr: TP86R203NL,LQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch DTMOS VII-H 1.9W 1050pF 19A 30V | 0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 30 V | 19 A | 7 mOhms | - 20 V, 20 V | 2.3 V | 17 nC | - 55 C | + 150 C | 1.9 W | Enhancement | U-MOSVIII-H | Reel | ||||
Mfr: TK35A08N1,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs MOSFET NCh 10ohm VGS10V10uAVDS80V | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 80 V | 35 A | 10 mOhms | - 20 V, 20 V | 4 V | 25 nC | - 55 C | + 150 C | 30 W | Enhancement | U-MOSVIII-H | Tube | ||||
Mfr: TK72A12N1,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs MOSFET NCh3.7ohm VGS10V10uAVDS120V | 0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 120 V | 72 A | 3.7 mOhms | - 20 V, 20 V | 4 V | 130 nC | - 55 C | + 150 C | 45 W | Enhancement | U-MOSVIII-H | Tube | ||||
Mfr: TK35N65W5,S1F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs MOSFET NChtrr130ns 0.08ohm DTMOS | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 35 A | 80 mOhms | - 30 V, 30 V | 4.5 V | 115 nC | - 55 C | + 150 C | 270 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TK62N60W,S1VF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs DTMOSIV 600V 40mOhm 61.8A 400W 6500pF | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 61.8 A | 33 mOhms | - 30 V, 30 V | 3.7 V | 180 nC | - 55 C | + 150 C | 400 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TK6Q60W,S1VQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs DTMOSIV 600V 820mOhm 6.2A 60W 390pF 12nC | 0In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 600 V | 6.2 A | 680 mOhms | - 30 V, 30 V | 3.7 V | 12 nC | - 55 C | + 150 C | 60 W | DTMOSIV | Tube | |||||
Mfr: TK5A65D(STA4,Q,M) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch FET 650V 2.6s IDSS 10 uA 1.2 Ohm | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 5 A | 1.43 Ohms | - 30 V, 30 V | 2 V | 16 nC | - 55 C | + 150 C | 40 W | Enhancement | MOSVII | Tube | ||||
Mfr: SSM6L40TU(TE85L,F) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch FET 30V 1.6A 1V 500mW | 0In Stock | Si | SMD/SMT | UF-6 | N-Channel, P-Channel | 2 Channel | 30 V | 1.4 A, 1.6 A | 122 mOhms | 500 mW | Reel | |||||||||||
Mfr: SSM3H137TU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=2A VDSS=34V | 0In Stock | Si | SMD/SMT | UFM-3 | N-Channel | 1 Channel | 34 V | 2 A | 240 mOhms | - 20 V, 20 V | 700 mV | + 150 C | 1 W | Enhancement | AEC-Q101 | U-MOSIV | Reel | |||||
0In Stock | Si | SMD/SMT | UF-6 | P-Channel | 1 Channel | 30 V | 1.4 A | 226 mOhms | - 20 V, 20 V | 2 V | 2.9 nC | - 55 C | + 150 C | 500 mW | Enhancement | AEC-Q101 | U-MOSIII | Reel | ||||
Mfr: TK31Z60X,S1F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-247-4L PD=230W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-247-4 | N-Channel | 1 Channel | 600 V | 30.8 A | 88 mOhms | - 30 V, 30 V | 3.5 V | 65 nC | - 55 C | + 150 C | 230 W | Enhancement | DTMOSIV-H | Tube | ||||
Mfr: TK7R4A10PL,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-220SIS PD=42W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 50 A | 11.2 mOhms | - 20 V, 20 V | 2.5 V | 44 nC | - 55 C | + 175 C | 42 W | Enhancement | U-MOSIX-H | Tube | ||||
0In Stock | Si | SMD/SMT | TSOP-6F | N-Channel | 2 Channel | 100 V | 3.5 A | 112 mOhms | - 20 V, 20 V | 2.5 V | 3.6 nC | + 175 C | 2.5 W | Enhancement | AEC-Q101 | Reel | ||||||
0In Stock | Si | SMD/SMT | CST-3 | P-Channel | 1 Channel | 30 V | 100 mA | 12 Ohms | - 20 V, 20 V | 1.7 V | 3.6 nC | + 150 C | 100 mW | Enhancement | Reel | |||||||
0In Stock | Si | SMD/SMT | PS-8 | N-Channel | 1 Channel | 40 V | 5 A | 31.8 mOhms | - 20 V, 20 V | 2 V | 11.8 nC | - 55 C | + 175 C | 1.96 W | Enhancement | AEC-Q101 | U-MOSIV | Reel | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 8 A | 440 mOhms | - 30 V, 30 V | 3 V | 22 nC | - 55 C | + 150 C | 80 W | Enhancement | DTMOSIV | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 9.7 A | 350 mOhms | - 30 V, 30 V | 3 V | 25 nC | - 55 C | + 150 C | 30 W | Enhancement | DTMOSIV | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 6.8 A | 640 mOhms | - 30 V, 30 V | 2.5 V | 15 nC | - 55 C | + 150 C | 30 W | Enhancement | DTMOSIV | Tube | |||||
0In Stock | Si | Reel | ||||||||||||||||||||
Mfr: TK2R4A08QM,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs UMOS10 TO-220SIS 80V 2.4mohm | 0In Stock | Si | Through Hole | TO-220SIS-3 | N-Channel | 1 Channel | 80 V | 100 A | 2.44 mOhms | - 20 V, 20 V | 3.5 V | 179 nC | + 175 C | 47 W | Enhancement | Tube | TK2R4A08QM,S4X(S | |||||
Mfr: SSM3J66MFV,L3XHF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs AUTO AEC-Q SS MOS P-ch Low Voltage Gate Drive VDSS:-20V Ic:-0.8A SOT-723 | 0In Stock | Si | SMD/SMT | VESM-3 | P-Channel | 1 Channel | 20 V | 800 mA | 480 mOhms | - 8 V, 6 V | 1 V | 1.6 nC | + 150 C | 500 mW | Enhancement | AEC-Q101 | Reel | SSM3J66MFV,L3XHF(B | ||||
Mfr: SSM3K341TU,LXHF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N Channel 60V 6A AECQ MOSFET | 0In Stock | Si | SMD/SMT | UFM-3 | N-Channel | 1 Channel | 60 V | 6 A | 36 mOhms | - 20 V, 20 V | 2.5 V | 9.3 nC | - 55 C | + 175 C | 1.8 W | Enhancement | AEC-Q101 | Reel | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 33 A | 9.7 mOhms | - 20 V, 20 V | 2.5 V | 33 nC | - 55 C | + 175 C | 125 W | Enhancement | AEC-Q101 | Reel |