Toshiba - MOSFETs
3,399 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: TK4R3E06PL,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 60V 3280pF 48.2nC 106A 87W | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 106 A | 3.3 mOhms | - 20 V, 20 V | 1.5 V | 48.2 nC | - 55 C | + 175 C | 87 W | Enhancement | U-MOSIX-H | Tube | ||||
0In Stock | Si | SMD/SMT | TSON-Advance-8 | N-Channel | 1 Channel | 40 V | 80 A | 2.3 mOhms | - 20 V, 20 V | 1.4 V | 41 nC | - 55 C | + 175 C | 104 W | Enhancement | U-MOSIX-H | Reel | |||||
Mfr: TJ60S06M3L(T6L1,NQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs P-Ch MOS -60A -60V 100W 7760pF 0.0112 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 60 A | 11.2 mOhms | - 20 V, 10 V | 2 V | 156 nC | - 55 C | + 175 C | 100 W | Enhancement | AEC-Q100 | U-MOSVI | Reel | |||
Mfr: SSM6J501NU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs PWR MGT 1.5V Drive P-Ch MOS -20V | 0In Stock | Si | SMD/SMT | UDFN-6 | P-Channel | 1 Channel | 20 V | 10 A | 15.3 mOhms | - 8 V, 8 V | 300 mV | 29.9 nC | - 55 C | + 150 C | 2 W | Enhancement | U-MOSVI | Reel | ||||
Mfr: SSM3J331R,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs P-Ch U-MOSVI FET ID -4A -20VDSS 630pF | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 20 V | 4 A | 150 mOhms | - 8 V, 8 V | 1 V | 10.4 nC | - 55 C | + 150 C | 1 W | Enhancement | U-MOSVI | Reel | ||||
Mfr: TK32E12N1,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 60A 98W FET 120V 2000pF 34nC | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 120 V | 60 A | 11 mOhms | - 20 V, 20 V | 4 V | 34 nC | - 55 C | + 150 C | 98 W | Enhancement | U-MOSVIII-H | Tube | ||||
Mfr: TK72E12N1,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 120V 179A 225W UMOSVIII 130nC .0044 | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 120 V | 179 A | 4.4 mOhms | - 20 V, 20 V | 2 V | 130 nC | + 150 C | 255 W | Enhancement | U-MOSVIII-H | Tube | |||||
Mfr: SSM6J503NU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs SM Sig P-CH MOS ID -6A -20V -8 VGSS | 0In Stock | Si | SMD/SMT | UDFN-6 | P-Channel | 1 Channel | 20 V | 6 A | 89.6 mOhms | - 8 V, 8 V | 1 V | 12.8 nC | - 55 C | + 150 C | 1 W | Enhancement | U-MOSVI | Reel | ||||
Mfr: SSM6P49NU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs SM Sig MOS 2 in 1 P-Ch -4A -20V 12V GS | 0In Stock | Si | SMD/SMT | UDFN-6 | P-Channel | 2 Channel | 20 V | 4 A | 157 mOhms | - 12 V, 12 V | 1.2 V | - 55 C | + 150 C | 1 W | Enhancement | U-MOSVI | Reel | |||||
Mfr: SSM6H19NU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs UDFN6 S-MOS TRSTR Pd: 0.5W F: 1MHz | 0In Stock | Si | SMD/SMT | UDFN-6 | N-Channel, SBD | 1 Channel | 40 V | 2 A | 160 mOhms | - 12 V, 12 V | 500 mV | 2.2 nC | - 55 C | + 150 C | 1 W | Enhancement | Reel | |||||
Mfr: TK20N60W,S1VF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch DTMOSIV 600 V 165W 1680pF 20A | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 20 A | 130 mOhms | - 30 V, 30 V | 3.7 V | 48 nC | - 55 C | + 150 C | 165 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: SSM3K357R,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=.65A VDSS=60V | 0In Stock | Si | SMD/SMT | SOT-23F-3 | N-Channel | 1 Channel | 60 V | 650 mA | 1.8 Ohms | - 12 V, 12 V | 1.3 V | 1.5 nC | - 55 C | + 150 C | 1.5 W | Enhancement | AEC-Q101 | MOSV | Reel | |||
0In Stock | Si | SMD/SMT | S-Mini-3 | P-Channel | 1 Channel | 20 V | 2 A | 150 mOhms | - 8 V, 6 V | 1 V | 4.6 nC | - 55 C | + 150 C | 1.2 W | Enhancement | AEC-Q101 | U-MOSVI | Reel | ||||
Mfr: SSM3K376R,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=4A VDSS=30V | 0In Stock | Si | SMD/SMT | SOT-23F-3 | N-Channel | 1 Channel | 30 V | 4 A | 56 mOhms | - 8 V, 12 V | 1 V | 2.2 nC | - 55 C | + 150 C | 1 W | Enhancement | AEC-Q101 | U-MOSVII-H | Reel | |||
Mfr: TJ30S06M3L,LXHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 68W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 30 A | 21.8 mOhms | - 20 V, 10 V | 3 V | 80 nC | + 175 C | 68 W | Enhancement | AEC-Q101 | Reel | TJ30S06M3L,LXHQ(O | ||||
0In Stock | Si | SMD/SMT | VESM-3 | P-Channel | 1 Channel | 20 V | 800 mA | 4 Ohms | - 8 V, 6 V | 1 V | 1.6 nC | - 55 C | + 150 C | 150 mW | Enhancement | AEC-Q101 | U-MOSVI | Reel | ||||
0In Stock | Si | SMD/SMT | UFM-3 | N-Channel | 1 Channel | 30 V | 2 A | 93 mOhms | - 12 V, 12 V | 1 V | 1.5 nC | - 55 C | + 150 C | 800 mW | Enhancement | AEC-Q101 | U-MOSIII | Reel | ||||
Mfr: SSM6J512NU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Small-signal MOSFET Vdss=-12V, Id=-10A | 0In Stock | Si | SMD/SMT | UDFN-6 | P-Channel | 1 Channel | 12 V | 10 A | 40.1 mOhms | - 10 V, 10 V | 1 V | 19.5 nC | - 55 C | + 150 C | 1.25 W | Enhancement | U-MOSVII | Reel | ||||
Mfr: TK4R4P06PL,RQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 60V 3280pF 48.2nC 106A 87W | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 60 V | 106 A | 3.4 mOhms | - 20 V, 20 V | 1.5 V | 48.2 nC | - 55 C | + 175 C | 87 W | Enhancement | U-MOSIX-H | Reel | ||||
Mfr: TK31V60W5,LVQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch DTMOSIV 600V 240W 3000pF 30.8A | 0In Stock | Si | SMD/SMT | DFN8x8-5 | N-Channel | 1 Channel | 600 V | 30.8 A | 87 mOhms | - 30 V, 30 V | 3 V | 105 nC | + 150 C | 240 W | Enhancement | DTMOSIV | Reel | |||||
Mfr: SSM3K16FV,L3F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=0.1A VDSS=20V | 0In Stock | Si | SMD/SMT | SOT-723-3 | N-Channel | 1 Channel | 20 V | 100 mA | 3 Ohms | - 10 V, 10 V | 600 mV | + 150 C | 150 mW | Enhancement | MOSVI | Reel | ||||||
Mfr: SSM6N39TU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=1.6A VDSS=20V | 0In Stock | Si | SMD/SMT | UF-6 | N-Channel | 2 Channel | 20 V | 1.6 A | 87 mOhms, 87 mOhms | - 10 V, 10 V | 350 mV | 7.5 nC | + 150 C | 500 mW | Enhancement | AEC-Q101 | U-MOSIII | Reel | ||||
Mfr: SSM3J168F,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=--0.4A VDSS=-60V | 0In Stock | Si | SMD/SMT | SOT-346-3 | P-Channel | 1 Channel | 60 V | 400 mA | 1.3 Ohms | - 20 V, 10 V | 2 V | 3 nC | - 55 C | + 150 C | 1.2 W | Enhancement | AEC-Q101 | U-MOSVI | Reel | |||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 7 A | 48 mOhms | - 20 V, 20 V | 4 V | 7.1 nC | - 55 C | + 175 C | 50 W | Enhancement | AEC-Q101 | Reel | |||||
0In Stock | Si | AEC-Q101 | Reel |