Toshiba - MOSFETs
3,350 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: TK15A50D(STA4,Q,M) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch MOS 15A 500V 50W 2300pF 0.3 | 0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 500 V | 15 A | 300 mOhms | 50 W | Tube | |||||||||||
Mfr: SSM3K56ACT,L3F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Small-signal MOSFET ID: 1.4A, VDSS: 20V | 0In Stock | Si | SMD/SMT | CST3-3 | N-Channel | 1 Channel | 20 V | 1.4 A | 840 mOhms | - 8 V, 8 V | 400 mV | 1 nC | - 55 C | + 150 C | 500 mW | Enhancement | U-MOSVII-H | Reel | ||||
Mfr: TJ15S06M3L,LXHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 41W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 15 A | 50 mOhms | - 20 V, 10 V | 3 V | 36 nC | + 175 C | 41 W | Enhancement | AEC-Q101 | Reel | TJ15S06M3L,LXHQ(O | ||||
Mfr: TK100A06N1,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs MOSFET NCh 2.2ohm VGS10V10uAVDS60V | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 100 A | 2.2 mOhms | - 20 V, 20 V | 4 V | 140 nC | - 55 C | + 150 C | 45 W | Enhancement | U-MOSVIII-H | Tube | ||||
Mfr: TPN1110ENH,L1Q TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs UMOSVIII 200V 126m (VGS=10V) TSON-ADV | 0In Stock | Si | SMD/SMT | TSON-Advance-8 | N-Channel | 1 Channel | 200 V | 13 A | 96 mOhms | - 20 V, 20 V | 4 V | 7 nC | - 55 C | + 150 C | 39 W | Enhancement | U-MOSVIII-H | Reel | ||||
Mfr: SSM6K204FE,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=2A VDSS=20V | 0In Stock | Si | SMD/SMT | ES-6 | N-Channel | 1 Channel | 20 V | 2 A | 126 mOhms | - 10 V, 10 V | 350 mV | 3.4 nC | - 55 C | + 150 C | 500 mW | Enhancement | U-MOSIII | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 18.5 A | 190 mOhms | - 30 V, 30 V | 2.7 V | 38 nC | - 55 C | + 150 C | 40 W | Enhancement | DTMOSIV | Tube | |||||
Mfr: TK70J20D,S1Q TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 200V 70A 410W MOSVII 160nC .0029 | 0In Stock | Si | Through Hole | TO-3PN-3 | N-Channel | 1 Channel | 200 V | 70 A | 27 mOhms | - 20 V, 20 V | 3.5 V | 160 nC | - 55 C | + 150 C | 410 W | Enhancement | MOSVII | |||||
Mfr: TK2R4E08QM,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs UMOS10 TO-220AB 80V 2.4mohm | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 80 V | 120 A | 2.44 mOhms | - 20 V, 20 V | 3.5 V | 178 nC | + 175 C | 300 W | Enhancement | Tube | TK2R4E08QM,S1X(S | |||||
Mfr: TK17E80W,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 800V 2050pF 32nC 17A 180W | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 17 A | 250 mOhms | - 20 V, 20 V | 3 V | 32 nC | - 55 C | + 150 C | 180 W | Enhancement | DTMOSIV | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 29 A | 95 mOhms | - 30 V, 30 V | 4.5 V | 50 nC | + 150 C | 230 W | Enhancement | Tube | |||||||
Mfr: TK10A50W,S5X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-220SIS PD=30W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 9.7 A | 380 mOhms | - 30 V, 30 V | 2.7 V | 20 nC | - 55 C | + 150 C | 30 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TK380A65Y,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-220SIS PD=30W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 9.7 A | 380 mOhms | - 30 V, 30 V | 4 V | 20 nC | - 55 C | + 150 C | 30 W | Enhancement | DTMOSV | Tube | ||||
Mfr: SSM6P36TU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Sm-signal/HiSpeed2n1 UF6 (SOT-363F) | 0In Stock | Si | SMD/SMT | UF-6 | P-Channel | 2 Channel | 20 V | 330 mA | 1.31 Ohms | - 8 V, 8 V | 1 V | 1.2 nC | + 150 C | 500 mW | Enhancement | AEC-Q101 | MOSIII | Reel | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 4 A | 1.7 Ohms | - 30 V, 30 V | 2.4 V | 12 nC | - 55 C | + 150 C | 100 W | Enhancement | MOSVII | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 900 V | 4.5 A | 3.1 Ohms | - 30 V, 30 V | 2.5 V | 20 nC | - 55 C | + 150 C | 40 W | Enhancement | MOSVII | Tube | |||||
0In Stock | Si | SMD/SMT | ES6-6 | N-Channel | 1 Channel | 30 V | 1.9 A | 133 mOhms | - 12 V, 12 V | 1 V | 1.9 nC | - 55 C | + 150 C | 500 mW | Enhancement | U-MOSIII | Reel | |||||
0In Stock | Si | SMD/SMT | UF-6 | P-Channel | 1 Channel | 20 V | 1.5 A | 213 mOhms | - 8 V, 8 V | 1 V | 6.4 nC | - 55 C | + 150 C | 500 mW | Enhancement | AEC-Q101 | U-MOSIII | Reel | ||||
Not Available Online | Si | Reel | ||||||||||||||||||||
0In Stock | Si | SMD/SMT | UFM-3 | P-Channel | 1 Channel | 20 V | 3.2 A | 93 mOhms | - 8 V, 6 V | 1 V | 4.7 nC | + 150 C | 1 W | Enhancement | U-MOSVI | Reel | ||||||
Mfr: SSM5N16FU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=0.1A VDSS=20V | 0In Stock | Si | SMD/SMT | SOT-353-5 | N-Channel | 2 Channel | 20 V | 100 mA | 3 Ohms | - 10 V, 10 V | 600 mV | + 150 C | 200 mW | Enhancement | MOSVI | Reel | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 7.8 A | 530 mOhms | - 30 V, 30 V | 2.5 V | 16 nC | - 55 C | + 150 C | 30 W | Enhancement | DTMOSIV | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 17.3 A | 170 mOhms | - 30 V, 30 V | 2.5 V | 45 nC | - 55 C | + 150 C | 165 W | Enhancement | DTMOSIV | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 35 A | 80 mOhms | - 30 V, 30 V | 3 V | 115 nC | - 55 C | + 150 C | 50 W | Enhancement | DTMOSIV | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 25 A | 99 mOhms | 30 V | 36 nC | + 150 C | 176 W | Enhancement | Tube |
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