Toshiba - MOSFETs
3,378 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | Through Hole | TO-220SIS-3 | N-Channel | 1 Channel | 600 V | 30 A | 80 mOhms | 30 V | 4 V | 43 nC | + 150 C | 45 W | Enhancement | Tube | |||||||
0In Stock | Si | SMD/SMT | TOLL-9 | N-Channel | 1 Channel | 600 V | 25 A | 99 mOhms | 30 V | 4 V | 36 nC | + 150 C | 176 W | Enhancement | Reel | |||||||
0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 100 V | 190 A | 2.7 mOhms | 20 V | 4.3 V | 52 nC | + 175 C | 210 W | Enhancement | Reel | |||||||
Mfr: SSM6K810R,LXHF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs AUTO AEC-Q SS MOS N-ch Logic-Level Gate Drive VDSS:100V IC:3.5A PD:1.5W TSOP6F | 0In Stock | Si | SMD/SMT | TSOP6F | N-Channel | 1 Channel | 100 V | 3.5 A | 51 mOhms | - 20 V, 20 V | 2.5 V | 3.2 nC | + 175 C | 1.5 W | Enhancement | AEC-Q101 | Reel | SSM6K810R,LXHF(B | ||||
Mfr: SSM3J35AFS,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=-.25A VDSS=-20V | 0In Stock | Si | SMD/SMT | SOT-416-3 | P-Channel | 1 Channel | 20 V | 250 mA | 1.1 Ohms | - 10 V, 10 V | 1 V | - 55 C | + 150 C | 500 mW | Enhancement | U-MOSVII | Reel | |||||
0In Stock | Si | SMD/SMT | SOT-23F-3 | P-Channel | 1 Channel | 30 V | 4 A | 71 mOhms | - 20 V, 10 V | 2 V | 5.9 nC | - 55 C | + 150 C | 2 W | Enhancement | AEC-Q101 | U-MOSVI | Reel | ||||
Mfr: TPH6R008QM,LQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 80V UMOS9-H SOP-Advance(N) 6mohm | 0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 60 V, 80 V | 107 A | 6 mOhms | - 20 V, 20 V | 3.5 V | 38 nC | + 175 C | 135 W | Enhancement | Reel | ||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 20 A | 125 mOhms | - 30 V, 30 V | 4 V | 28 nC | + 150 C | 150 W | Enhancement | Tube | |||||||
0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 40 V | 150 A | 1.3 mOhms | - 20 V, 20 V | 3 V | 85 nC | + 175 C | 170 W | Enhancement | Reel | ||||||||
0In Stock | Si | SMD/SMT | UFM-3 | P-Channel | 1 Channel | 20 V | 4.4 A | 25.8 mOhms | - 8 V, 6 V | 1 V | 24.8 nC | + 150 C | 1 W | Enhancement | AEC-Q101 | U-MOSVI | Reel | |||||
Mfr: TPHR7904PB,L1XHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 170W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | SOP-Advance-8 | N-Channel | 1 Channel | 40 V | 150 A | 790 uOhms | - 20 V, 20 V | 3 V | 85 nC | + 175 C | 170 W | Enhancement | AEC-Q101 | Reel | TPHR7904PB,L1XHQ(O | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 27.6 A | 110 mOhms | - 30 V, 30 V | 2.5 V | 75 nC | - 55 C | + 150 C | 230 W | Enhancement | DTMOSIV | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 27.6 A | 94 mOhms | - 30 V, 30 V | 2.5 V | 75 nC | - 55 C | + 150 C | 45 W | Enhancement | DTMOSIV | Tube | |||||
Mfr: SSM6J212FE,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs P-Ch U-MOS VI FET ID -4A -20VDSS 500mW | 0In Stock | Si | SMD/SMT | ES6-6 | P-Channel | 1 Channel | 20 V | 4 A | 94 mOhms | - 8 V, 8 V | 1 V | 14.1 nC | - 55 C | + 150 C | 500 mW | Enhancement | U-MOSVI | Reel | ||||
Mfr: TK3A65D(STA4,Q,M) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch MOS 3A 650V 35W 540pF 2.25 Ohm | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 3 A | 2.25 Ohms | - 30 V, 30 V | 2.4 V | 11 nC | - 55 C | + 150 C | 35 W | Enhancement | MOSVII | Tube | ||||
Mfr: TK31N60W5,S1VF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs MOSFET NChtrr135ns 0.082ohm DTMOS | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 30.8 A | 82 mOhms | - 30 V, 30 V | 4.5 V | 105 nC | - 55 C | + 150 C | 230 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TK14N65W,S1F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs MOSFET NChannel 0.22ohm DTMOS | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 13.7 A | 220 mOhms | - 30 V, 30 V | 3.5 V | 35 nC | - 55 C | + 150 C | 130 W | Enhancement | DTMOSIV | Tube | ||||
0In Stock | Si | SMD/SMT | SOP-Advance-8 | N-Channel | 1 Channel | 150 V | 64 A | 11 mOhms | - 20 V, 20 V | 4.3 V | 44 nC | + 175 C | 210 W | Enhancement | Reel | |||||||
Mfr: TPM1R006PL,LQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-ch MOSFET 40V 0.00067Ohm SOP Advance(N) U-MOS11-H | 0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 60 V | 341 A | 1 mOhms | 20 V | 2.5 V | 106 nC | + 175 C | 250 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 30 V | 320 A | 770 uOhms | - 20 V, 20 V | 2.3 V | 74 nC | + 150 C | 170 W | Enhancement | Reel | TPHR9003NL1,LQ(M | ||||||
0In Stock | Si | SMD/SMT | UFV-5 | N-Channel | 1 Channel | 20 V | 2.4 A | 65 mOhms | - 20 V, 20 V | 1.2 V | 2.2 nC | - 55 C | + 125 C | 500 mW | Enhancement | Reel | ||||||
0In Stock | Si | AEC-Q101 | Reel | |||||||||||||||||||
Mfr: SSM6N44FU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Sm-signal/HiSpeed2n1 US6 (SOT-363) | 0In Stock | Si | SMD/SMT | US-6 | N-Channel | 2 Channel | 30 V | 100 mA | 4 Ohms | - 20 V, 20 V | 1.5 V | - 55 C | + 150 C | 200 mW | Enhancement | AEC-Q101 | MOSVI | Reel | ||||
0In Stock | Si | Reel | ||||||||||||||||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 13.7 A | 250 mOhms | - 30 V, 30 V | 3 V | 40 nC | - 55 C | + 150 C | 130 W | Enhancement | DTMOSIV | Tube |
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