Toshiba - MOSFETs
3,399 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: TK12A45D(STA4,Q,M) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch MOS 12A 450V 45W 1200pF 0.52 | 0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 450 V | 12 A | 520 mOhms | 45 W | MOSVII | Tube | ||||||||||
Mfr: SSM6N37FE(TE85L,F) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch FET MOS 1.5V Drive 20V 500mA | 0In Stock | Si | SMD/SMT | ES6-6 | N-Channel | 2 Channel | 20 V | 250 mA | - 10 V, 10 V | - 55 C | + 150 C | 150 mW | Reel | |||||||||
Mfr: TPH6R003NL,LQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch DTMOS VII-H 34W 1050pF 57A 30V | 0In Stock | Si | SMD/SMT | SOP-Advance-8 | N-Channel | 1 Channel | 30 V | 57 A | 6.8 mOhms | - 20 V, 20 V | 2.3 V | 17 nC | - 55 C | + 150 C | 34 W | Enhancement | U-MOSVIII-H | Reel | ||||
0In Stock | Si | SMD/SMT | UDFN-6 | N-Channel | 1 Channel | 20 V | 4.2 A | 66 mOhms | - 10 V, 10 V | 350 mV | 16.8 nC | - 55 C | + 150 C | 500 mW | Enhancement | AEC-Q101 | U-MOSIII | Reel | ||||
Mfr: SSM6K781G,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs WCSP6C S-MOS TRSTR Pd=0mW F=1MHz | 0In Stock | Si | SMD/SMT | WCSP6C-6 | N-Channel | 1 Channel | 12 V | 7 A | 14.4 mOhms | - 8 V, 8 V | 400 mV | 5.4 nC | - 55 C | + 150 C | 1.6 W | Enhancement | U-MOSVII-H | Reel | ||||
Mfr: SSM6J215FE(TE85L,F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs P-Ch U-MOS VI FET ID -3.4A -20V 630pF | 0In Stock | Si | SMD/SMT | ES6-6 | P-Channel | 1 Channel | 20 V | 3.4 A | 154 mOhms | - 8 V, 8 V | 1 V | 10.4 nC | - 55 C | + 150 C | 500 mW | Enhancement | U-MOSVI | Reel | ||||
Mfr: TK39N60X,S1F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs DTMOSIV-H/S 600V 65mOhmmax(VGS=10V) | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 38.8 A | 55 mOhms | - 30 V, 30 V | 3.5 V | 85 nC | - 55 C | + 150 C | 270 W | Enhancement | DTMOSIV-H | Tube | ||||
Mfr: TK15S04N1L,LQ TTI: Not Assigned Toshiba Availability: Not Available OnlineMOSFETs 40W 1MHz Automotive; AEC-Q101 | Not Available Online | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 40 V | 15 A | 13.7 mOhms | - 20 V, 20 V | 2.5 V | 10 nC | - 55 C | + 175 C | 40 W | Enhancement | AEC-Q101 | U-MOSVIII-H | Reel | |||
Mfr: TK560A60Y,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch DTMOSV 600V 30W 380pF 7.0A | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 7 A | 560 mOhms | - 30 V, 30 V | 4 V | 14.5 nC | - 55 C | + 150 C | 30 W | Enhancement | DTMOSV | Tube | ||||
0In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 650 V | 5.8 A | 890 mOhms | - 30 V, 30 V | 2.5 V | 11 nC | - 55 C | + 150 C | 60 W | Enhancement | DTMOSIV | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 27.6 A | 94 mOhms | - 30 V, 30 V | 2.5 V | 75 nC | - 55 C | + 150 C | 230 W | Enhancement | DTMOSIV | Tube | |||||
Mfr: SSM3J144TU,LXHF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs SMOS P-ch Vdss:-20V Vgss:-8/+6V Id:-3.2A | 0In Stock | Si | SMD/SMT | UFM-3 | P-Channel | 1 Channel | 20 V | 3.2 A | 93 mOhms | - 8 V, 6 V | 1 V | 4.7 nC | + 150 C | 1 W | Enhancement | AEC-Q101 | Reel | |||||
Mfr: SSM3K7002KF,LXHF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs SMOS Nch I: 0.4A, V: 60V, P: 270mW S-Min | 0In Stock | Si | SMD/SMT | S-Mini-3 | N-Channel | 1 Channel | 60 V | 400 mA | 1.75 Ohms | - 20 V, 20 V | 2.1 V | + 150 C | 900 mW | Enhancement | AEC-Q101 | Reel | ||||||
0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 40 V | 270 A | 1 mOhms | - 20 V, 20 V | 2.4 V | 74 nC | + 175 C | 170 W | Enhancement | Reel | TPH1R204PL1,LQ(M | ||||||
0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 30 V | 320 A | 610 uOhms | - 20 V, 20 V | 2.1 V | 81 nC | + 175 C | 170 W | Enhancement | Reel | TPHR9203PL1,LQ(M | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 11.5 A | 300 mOhms | - 30 V, 30 V | 2.7 V | 25 nC | - 55 C | + 150 C | 35 W | Enhancement | DTMOSIV | Tube | |||||
Mfr: TK560P60Y,RQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch DTMOSV 600V 60W 380pF 7.0A | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 7 A | 560 mOhms | - 30 V, 30 V | 4 V | 14.5 nC | - 55 C | + 150 C | 60 W | Enhancement | DTMOSV | Reel | ||||
Mfr: SSM14N956L,EFF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 12V Common Drain MOSFET Rss(on): 1.1mOhm | 0In Stock | Si | SMD/SMT | N-Channel | 2 Channel | 1.35 mOhms | - 8 V, 8 V | 76 nC | + 150 C | 1.33 W | Enhancement | Reel | ||||||||||
Mfr: TK22A65X,S5X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-220SIS PD=45W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 22 A | 150 mOhms | - 30 V, 30 V | 3.5 V | 50 nC | - 55 C | + 150 C | 45 W | Enhancement | DTMOSIV-H | Tube | ||||
Mfr: SSM6N36TU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Sm-signal/HiSpeed2n1 UF6 (SOT-363F) | 0In Stock | Si | SMD/SMT | UF-6 | N-Channel | 2 Channel | 20 V | 500 mA | 630 mOhms | - 5 V, 5 V | 1 V | 1.23 nC | + 150 C | 500 mW | Enhancement | AEC-Q101 | MOSIII | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 25 A | 70 mOhms | - 20 V, 20 V | 1.5 V | 60 nC | - 55 C | + 150 C | 45 W | Enhancement | MOSVII | Tube | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 15.8 A | 230 mOhms | - 30 V, 30 V | 3 V | 43 nC | - 55 C | + 150 C | 130 W | Enhancement | DTMOSIV | Reel | |||||
Mfr: TK2R9E10PL,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Power MOSFET ID=240A VDSS=100V | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 240 A | 2.4 mOhms | - 20 V, 20 V | 1.5 V | 161 nC | - 55 C | + 175 C | 306 W | Enhancement | U-MOSIX-H | Tube | ||||
0In Stock | Si | Through Hole | TO-220SIS-3 | N-Channel | 1 Channel | 600 V | 20 A | 125 mOhms | 30 V | 4 V | 28 nC | + 150 C | 40 W | Enhancement | Tube | |||||||
0In Stock | Si | Through Hole | TO-220SIS-3 | N-Channel | 1 Channel | 600 V | 17 A | 155 mOhms | 30 V | 4 V | 24 nC | + 150 C | 40 W | Enhancement | Tube |