Toshiba - MOSFETs
3,350 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 80 V | 64 A | 7 mOhms | - 20 V, 20 V | 3.5 V | 39 nC | + 175 C | 87 W | Enhancement | Tube | TK7R0E08QM,S1X(S | ||||||
Mfr: TK40S06N1L,LXHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 2W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 60 V | 40 A | 10.5 mOhms | - 20 V, 20 V | 2.5 V | 26 nC | + 175 C | 88.2 W | Enhancement | AEC-Q101 | Reel | TK40S06N1L,LXHQ(O | ||||
Mfr: SSM6N44FU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Sm-signal/HiSpeed2n1 US6 (SOT-363) | 0In Stock | Si | SMD/SMT | US-6 | N-Channel | 2 Channel | 30 V | 100 mA | 4 Ohms | - 20 V, 20 V | 1.5 V | - 55 C | + 150 C | 200 mW | Enhancement | AEC-Q101 | MOSVI | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 300 V | 18 A | 139 mOhms | - 20 V, 20 V | 1.5 V | 60 nC | - 55 C | + 150 C | 45 W | Enhancement | MOSVII | Tube | |||||
0In Stock | Si | Through Hole | TO-247-4 | N-Channel | 1 Channel | 650 V | 57 A | 40 mOhms | - 30 V, 30 V | 4 V | 105 nC | - 55 C | + 150 C | 360 W | Enhancement | DTMOSVI | Reel | |||||
0In Stock | Si | SMD/SMT | UDFN-6B | N-Channel | 1 Channel | 20 V | 6 A | 108 mOhms | - 8 V, 8 V | 1 V | 3.6 nC | - 55 C | + 150 C | 1.25 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | UFV-5 | N-Channel | 1 Channel | 20 V | 2.4 A | 65 mOhms | - 20 V, 20 V | 1.2 V | 2.2 nC | - 55 C | + 125 C | 500 mW | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 30 V | - 20 V, 20 V | 2.3 V | 17.3 nC | + 150 C | 1.51 W | Enhancement | Reel | ||||||||||
0In Stock | Si | SMD/SMT | UFM-3 | P-Channel | 1 Channel | 20 V | 4.4 A | 25.8 mOhms | - 8 V, 6 V | 1 V | 24.8 nC | + 150 C | 1 W | Enhancement | AEC-Q101 | U-MOSVI | Reel | |||||
Mfr: TK095Z65Z5,S1F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 650 V 0.095 Ohm N-ch MOSFET TO-247-4L(X) DTMOS | 0In Stock | Si | Through Hole | TO-247-4 | N-Channel | 1 Channel | 650 V | 29 A | 95 mOhms | 30 V | 4.5 V | 50 nC | + 150 C | 230 W | Enhancement | Tube | ||||||
Mfr: TK115Z65Z5,S1F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 650 V 0.115 Ohm N-ch MOSFET TO-247-4L(X) DTMOS | 0In Stock | Si | Through Hole | TO-247-4 | N-Channel | 1 Channel | 650 V | 24 A | 115 mOhms | 30 V | 4.5 V | 42 nC | + 150 C | 190 W | Enhancement | Tube | ||||||
Mfr: TK165A65Z5,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 650 V 0.165 Ohm N-ch MOSFET TO-220SIS DTMOS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 18 A | 165 mOhms | 30 V | 4.5 V | 30 nC | + 150 C | 40 W | Enhancement | Tube | ||||||
Mfr: TK3R1A04PL,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 40V 4670pF 63.4nC 82A 36W | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 40 V | 82 A | 2.5 mOhms | - 20 V, 20 V | 1.4 V | 63.4 nC | - 55 C | + 175 C | 36 W | Enhancement | U-MOSIX-H | Tube | ||||
0In Stock | Si | SMD/SMT | TOLL-9 | N-Channel | 1 Channel | 600 V | 25 A | 99 mOhms | 30 V | 4 V | 36 nC | + 150 C | 176 W | Enhancement | Reel | |||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 20 A | 125 mOhms | - 30 V, 30 V | 4 V | 28 nC | + 150 C | 150 W | Enhancement | Tube | |||||||
Mfr: TK290A65Y,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch DTMOSV 650V 35W 730pF 11.5A | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 11.5 A | 290 mOhms | - 30 V, 30 V | 4 V | 25 nC | - 55 C | + 150 C | 35 W | Enhancement | DTMOSV | Tube | ||||
Mfr: SSM3J35CT,L3F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Small-signal MOSFET ID=-0.1A VDSS=-20V | 0In Stock | Si | SMD/SMT | SOT-883-3 | P-Channel | 1 Channel | 20 V | 100 mA | 4.3 Ohms | - 10 V, 10 V | 1 V | - 55 C | + 150 C | 100 mW | Enhancement | MOSVI | Reel | |||||
Mfr: SSM5N15FU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=0.1A VDSS=30V | 0In Stock | Si | SMD/SMT | SOT-353-5 | N-Channel | 2 Channel | 30 V | 100 mA | 2.2 Ohms, 2.2 Ohms | - 20 V, 20 V | 800 mV | - 55 C | + 150 C | 200 mW | Enhancement | MOSVI | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 27.6 A | 110 mOhms | - 30 V, 30 V | 2.5 V | 75 nC | - 55 C | + 150 C | 230 W | Enhancement | DTMOSIV | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 900 V | 2.5 A | 4.6 Ohms | - 30 V, 30 V | 2.5 V | 15 nC | - 55 C | + 150 C | 35 W | Enhancement | MOSVIII | Tube | |||||
Mfr: TK2Q60D(Q) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch MOS 2A 600V 60W 280pF 4.3 Ohm | 0In Stock | Si | Through Hole | PW-Mold2-3 | N-Channel | 1 Channel | 600 V | 2 A | 4.3 Ohms | - 30 V, 30 V | 2.4 V | 7 nC | - 55 C | + 150 C | 60 W | Enhancement | MOSVII | Reel | ||||
Mfr: TK4P60DB(T6RSS-Q) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch MOS 3.7A 600V 80W 540pF 2.0 Ohm | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 3.7 A | 2 Ohms | - 30 V, 30 V | 4.4 V | 11 nC | + 150 C | 80 W | Enhancement | MOSVII | Reel | |||||
Mfr: TPN3300ANH,LQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 100V 21A 27W UMOSVIII 680pF 11nC | 0In Stock | Si | SMD/SMT | TSON-8 | N-Channel | 1 Channel | 100 V | 21 A | 28 mOhms | - 20 V, 20 V | 4 V | 11 nC | - 55 C | + 150 C | 27 W | Enhancement | U-MOSVIII-H | Reel | ||||
Mfr: SSM6J212FE,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs P-Ch U-MOS VI FET ID -4A -20VDSS 500mW | 0In Stock | Si | SMD/SMT | ES6-6 | P-Channel | 1 Channel | 20 V | 4 A | 94 mOhms | - 8 V, 8 V | 1 V | 14.1 nC | - 55 C | + 150 C | 500 mW | Enhancement | U-MOSVI | Reel | ||||
Mfr: TK16J60W,S1VQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 15.8A 130W FET 600V 1350pF 38nC | 0In Stock | Si | Through Hole | TO-3PN-3 | N-Channel | 1 Channel | 600 V | 15.8 A | 160 mOhms | - 30 V, 30 V | 3.7 V | 38 nC | - 55 C | + 150 C | 130 W | Enhancement | DTMOSIV |
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