Toshiba - MOSFETs
3,835 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Not Available Online | Si | Reel | ||||||||||||||||||||
Mfr: TPM1R006PL,LQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-ch MOSFET 40V 0.00067Ohm SOP Advance(N) U-MOS11-H | 0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 60 V | 341 A | 1 mOhms | 20 V | 2.5 V | 106 nC | + 175 C | 250 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | SOT-416-3 | P-Channel | 1 Channel | 20 V | 250 mA | 1.4 Ohms | 10 V | 1 V | + 150 C | 500 mW | Depletion | Reel | ||||||||
0In Stock | Si | SMD/SMT | SOT-723-3 | N-Channel | 1 Channel | 20 V | 250 mA | 1.1 Ohms | 10 V | 1 V | 620 pC | + 150 C | 500 mW | Enhancement | Reel | |||||||
0In Stock | Si | SMD/SMT | DFN2020B-6 | P-Channel | 1 Channel | 30 V | 4 A | 71 mOhms | - 20 V, 10 V | 2 V | 5.9 nC | + 150 C | 3.5 W | Depletion | Reel | |||||||
0In Stock | Si | SMD/SMT | TSOP-6F | P-Channel | 1 Channel | 20 V | 3.9 A | 93 mOhms | - 8 V, 6 V | 1 V | 4.6 nC | + 150 C | 3.1 W | Depletion | Reel | |||||||
Mfr: TK20J60W,S1VE TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-3PN PD=165W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-3PN-3 | N-Channel | 1 Channel | 600 V | 20 A | 155 mOhms | 30 V | 3.7 V | 48 nC | - 55 C | + 150 C | 165 W | Enhancement | DTMOSIV | Tray | ||||
Mfr: TK290A65Y,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch DTMOSV 650V 35W 730pF 11.5A | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 11.5 A | 290 mOhms | 30 V | 4 V | 25 nC | - 55 C | + 150 C | 35 W | Enhancement | DTMOSV | Tube | ||||
Mfr: TK20A60W5,S5VX TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs MOSFET NChtrr100ns 0.25ohm DTMOS | 0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 600 V | 20 A | 150 mOhms | 30 V | 4.5 V | 55 nC | - 55 C | + 150 C | 45 W | Enhancement | DTMOSIV | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 20 A | 125 mOhms | 30 V | 4 V | 28 nC | + 150 C | 150 W | Enhancement | Tube | |||||||
Mfr: TPMR4904RM,LQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-ch U-MOS11-H 40V 0.49Ohm Vth = 2.0 to 3.0V SOP Advance(E) | 0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 40 V | 514 A | 0.49 mOhms | 20 V | 3 V | 107 nC | + 175 C | 250 W | Enhancement | Reel | ||||||
Mfr: XPN52016MC,L1XHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs -60 V 52mOhm P-ch MOSFET AEC-Q TSON Advance(WF) | 0In Stock | Si | SMD/SMT | TSON-8 | P-Channel | 1 Channel | 60 V | 15 A | 52 mOhms | - 20 V, 10 V | 2.1 V | 47 nC | + 175 C | 65 W | Enhancement | AEC-Q101 | Reel | |||||
Not Available Online | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 800 V | 3 A | 4.9 Ohms | 30 V | 2.5 V | 12 nC | - 55 C | + 150 C | 80 W | Enhancement | MOSVIII | Reel | |||||
0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 30 V | 320 A | 770 uOhms | 20 V | 2.3 V | 74 nC | + 150 C | 170 W | Enhancement | Reel | TPHR9003NL1,LQ(M | ||||||
Mfr: TK1R5R04PB,LXGQ TTI: Not Assigned Toshiba Availability: Not Available OnlineMOSFETs 205W 1MHz Automotive; AEC-Q101 | Not Available Online | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 40 V | 160 A | 1.5 mOhms | 20 V | 3 V | 103 nC | + 175 C | 205 W | Enhancement | AEC-Q101 | Reel | TK1R5R04PB,LXGQ(O | ||||
Mfr: TK3R1A04PL,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 40V 4670pF 63.4nC 82A 36W | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 40 V | 82 A | 2.5 mOhms | 20 V | 1.4 V | 63.4 nC | - 55 C | + 175 C | 36 W | Enhancement | U-MOSIX-H | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 13.7 A | 250 mOhms | 30 V | 3 V | 40 nC | - 55 C | + 150 C | 130 W | Enhancement | DTMOSIV | Tube | |||||
Mfr: TK25A60X5,S5X TTI: Not Assigned Toshiba Availability: Not Available OnlineMOSFETs Power MOSFET N-Channel | Not Available Online | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 25 A | 120 mOhms | 30 V | 3 V | 60 nC | - 55 C | + 150 C | 45 W | Enhancement | DTMOSIV-H | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 5.8 A | 850 mOhms | 30 V | 2.5 V | 11 nC | - 55 C | + 150 C | 30 W | Enhancement | DTMOSIV | Tube | |||||
Mfr: TK100A10N1,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs MOSFET NCh 3.1ohm VGS10V10uAVDS100V | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 100 A | 3.1 mOhms | 20 V | 4 V | 140 nC | - 55 C | + 150 C | 45 W | Enhancement | U-MOSVIII-H | Tube | ||||
Mfr: TK90S06N1L,LQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs UMOSVIII 60V 3.3m max(VGS=10V) DPAK | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 60 V | 90 A | 5.2 mOhms | 20 V | 1.5 V | 81 nC | - 55 C | + 175 C | 100 W | Enhancement | AEC-Q101 | U-MOSVIII-H | Reel | |||
Mfr: TPH6R008QM,LQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 80V UMOS9-H SOP-Advance(N) 6mohm | 0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 60 V, 80 V | 107 A | 6 mOhms | 20 V | 3.5 V | 38 nC | + 175 C | 135 W | Enhancement | Reel | ||||||
0In Stock | Si | Through Hole | TO-220SIS-3 | N-Channel | 1 Channel | 600 V | 30 A | 80 mOhms | 30 V | 4 V | 43 nC | + 150 C | 45 W | Enhancement | Tube | |||||||
0In Stock | Si | SMD/SMT | TOLL-9 | N-Channel | 1 Channel | 600 V | 25 A | 99 mOhms | 30 V | 4 V | 36 nC | + 150 C | 176 W | Enhancement | Reel | |||||||
Mfr: TK11A65W,S5X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs MOSFET NChannel 0.33ohm DTMOS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 11.1 A | 330 mOhms | 30 V | 3.5 V | 25 nC | - 55 C | + 150 C | 35 W | Enhancement | DTMOSIV | Tube |