Toshiba - MOSFETs
3,350 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 650 V | 5.8 A | 890 mOhms | - 30 V, 30 V | 2.5 V | 11 nC | - 55 C | + 150 C | 60 W | Enhancement | DTMOSIV | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 9.3 A | 430 mOhms | - 30 V, 30 V | 2.5 V | 20 nC | - 55 C | + 150 C | 30 W | Enhancement | DTMOSIV | Tube | |||||
Mfr: TK46E08N1,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 80V N-Ch PWR FET 80A 103W 37nC | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 80 V | 80 A | 8.4 mOhms | - 20 V, 20 V | 37 nC | 103 W | U-MOSVIII-H | Tube | ||||||||
Mfr: TK35E08N1,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 80V N-Ch PWR FET 55A 72W 25nC | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 80 V | 55 A | 12.2 mOhms | - 20 V, 20 V | 2 V | 25 nC | - 55 C | + 150 C | 72 W | Enhancement | U-MOSVIII-H | Tube | ||||
Mfr: TK39J60W5,S1VQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 38.8A 270W FET 600V 4100pF 135nC | 0In Stock | Si | Through Hole | TO-3PN-3 | N-Channel | 1 Channel | 600 V | 38.8 A | 55 mOhms | - 30 V, 30 V | 3.7 V | 110 nC | - 55 C | + 150 C | 270 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TK12E60W,S1VX TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 11.5A 110W FET 600V 890pF 25nC | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 11.5 A | 300 mOhms | - 30 V, 30 V | 3.7 V | 25 nC | - 55 C | + 150 C | 110 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TK65A10N1,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs MOSFET NCh 4ohm VGS10V10uAVDS100V | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 65 A | 4 mOhms | - 20 V, 20 V | 4 V | 81 nC | - 55 C | + 150 C | 45 W | Enhancement | U-MOSVIII-H | Tube | ||||
Mfr: TK7J90E,S1E TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs PLN MOS 900V 2000m (VGS=10V) TO-3PN | 0In Stock | Si | Through Hole | TO-3PN-3 | N-Channel | 1 Channel | 900 V | 7 A | 1.6 Ohms | - 30 V, 30 V | 4 V | 32 nC | - 55 C | + 150 C | 200 W | Enhancement | MOSVIII | Tray | ||||
Mfr: TPH4R008NH,L1Q TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs U-MOSVIII-H 80V 100A 59nC MOSFET | 0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 80 V | 100 A | 3.3 mOhms | - 20 V, 20 V | 4 V | 59 nC | - 55 C | + 150 C | 78 W | Enhancement | U-MOSVIII-H | Reel | ||||
Mfr: TK20N60W,S1VF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch DTMOSIV 600 V 165W 1680pF 20A | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 20 A | 130 mOhms | - 30 V, 30 V | 3.7 V | 48 nC | - 55 C | + 150 C | 165 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: SSM3K16FV,L3F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=0.1A VDSS=20V | 0In Stock | Si | SMD/SMT | SOT-723-3 | N-Channel | 1 Channel | 20 V | 100 mA | 3 Ohms | - 10 V, 10 V | 600 mV | + 150 C | 150 mW | Enhancement | MOSVI | Reel | ||||||
Mfr: SSM3K2615TU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=2A VDSS=60V | 0In Stock | Si | SMD/SMT | UFM-3 | N-Channel | 1 Channel | 60 V | 2 A | 300 mOhms | - 20 V, 20 V | 800 mV | 6 nC | + 150 C | 1.6 W | Enhancement | AEC-Q101 | MOSV | Reel | ||||
Mfr: SSM5P15FU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=-0.1A VDSS=-30V | 0In Stock | Si | SMD/SMT | SOT-353-5 | P-Channel | 2 Channel | 30 V | 100 mA | 12 Ohms | - 20 V, 20 V | 1.7 V | + 150 C | 200 mW | Enhancement | MOSVI | Reel | ||||||
Mfr: SSM3J145TU,LXHF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs SMOS P-ch Vdss:-20V Vgss:-8/+6V Id:-3A U | 0In Stock | Si | SMD/SMT | UFM-3 | P-Channel | 1 Channel | 20 V | 3 A | 103 mOhms | - 8 V, 6 V | 1 V | 4.6 nC | + 150 C | 1 W | Enhancement | AEC-Q101 | Reel | |||||
0In Stock | Si | SMD/SMT | DSOP-8 | N-Channel | 1 Channel | 100 V | 70 A | 4.1 mOhms | - 20 V, 20 V | 3.5 V | 75 nC | - 55 C | + 175 C | 170 W | Enhancement | Reel | ||||||
0In Stock | Si | Through Hole | TO-247-4 | N-Channel | 1 Channel | 650 V | 24 A | 110 mOhms | - 10 V, 10 V | 3 V | 40 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | ||||||
Mfr: TPH3R70APL1,LQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 100V U-MOS IX-H SOP-Advance(N) 3.7mohm | 0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 100 V | 90 A | 6.2 mOhms | - 20 V, 20 V | 2.5 V | 67 nC | - 55 C | + 175 C | 210 W | Enhancement | Reel | |||||
Mfr: SSM6N76FE,LM TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-ch x 2 MOSFET, 20 V, 0.8 A, 0.235 ohm at 4.5V, SOT-563(ES6) | 0In Stock | Si | SMD/SMT | ES-6 | N-Channel | 1 Channel | 20 V | 800 mA | 235 mOhms | 8 V | 1 | 1 nC | + 150 C | 250 mW | Enhancement | |||||||
Mfr: TK165E65Z5,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 650 V 0.165 Ohm N-ch MOSFET TO-220 DTMOS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 18 A | 165 mOhms | 30 V | 4.5 V | 30 nC | + 150 C | 150 W | Enhancement | Tube | ||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 24 A | 115 mOhms | 30 V | 4.5 V | 42 nC | + 150 C | 190 W | Enhancement | Tube | |||||||
Mfr: TK7E80W,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 800V 700pF 13nC 6.5A 110W | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 6.5 A | 795 mOhms | - 20 V, 20 V | 3 V | 13 nC | - 55 C | + 150 C | 110 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TK17A65W5,S5X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-220SIS PD=45W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 17.3 A | 230 mOhms | - 30 V, 30 V | 4.5 V | 50 nC | - 55 C | + 150 C | 45 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TK4R1A10PL,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-220SIS PD=54W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 80 A | 5.9 mOhms | - 20 V, 20 V | 2.5 V | 104 nC | - 55 C | + 175 C | 54 W | Enhancement | U-MOSIX-H | Tube | ||||
Mfr: TK100S04N1L,LXHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 180W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 40 V | 100 A | 2.3 mOhms | - 20 V, 20 V | 2.5 V | 76 nC | + 175 C | 180 W | Enhancement | AEC-Q101 | Reel | TK100S04N1L,LXHQ(O | ||||
0In Stock | Si | SMD/SMT | UFM-3 | P-Channel | 1 Channel | 20 V | 5.5 A | 29.8 mOhms | - 8 V, 6 V | 1 V | 12.8 nC | - 55 C | + 150 C | 1 W | Enhancement | AEC-Q101 | U-MOSVI | Reel |
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