ROHM Semiconductor - MOSFETs
2,068 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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0In Stock | Reel | |||||||||||||||||||||
0In Stock | Si | Through Hole | TO-3PF-3 | N-Channel | 1 Channel | 600 V | 35 A | 102 mOhms | - 20 V, 20 V | 4 V | 110 nC | - 55 C | + 150 C | 120 W | Enhancement | Tube | R6035ENZ | |||||
0In Stock | Si | SMD/SMT | TO-252-3 | P-Channel | 1 Channel | 40 V | 80 A | 4.9 mOhms | - 20 V, 5 V | 2.5 V | 145 nC | - 55 C | + 175 C | 142 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | TO-252-3 | N-Channel | 1 Channel | 40 V | 80 A | 3.1 mOhms | - 20 V, 20 V | 2.5 V | 41 nC | - 55 C | + 175 C | 96 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | SOT-223-3 | N-Channel | 1 Channel | 600 V | 2.8 A | 870 mOhms | - 20 V, 20 V | 5.5 V | 12 nC | - 55 C | + 150 C | 12.3 W | Enhancement | Reel | ||||||
Mfr: R6010YNX3C16 TTI: Not Assigned ROHM Semiconductor Availability: 0In StockMOSFETs 600V 10A TO-220AB, High-speed switching Power MOSFET | 0In Stock | Si | Through Hole | TO-220AB-3 | N-Channel | 1 Channel | 600 V | 10 A | 390 mOhms | - 30 V, 30 V | 6 V | 15 nC | - 55 C | + 150 C | 92 W | Enhancement | Tube | |||||
Mfr: R6038YNZ4C13 TTI: Not Assigned ROHM Semiconductor Availability: 0In StockMOSFETs 600V 38A TO-247, High-speed switching Power MOSFET | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 38 A | 96 mOhms | - 30 V, 30 V | 6 V | 50 nC | - 55 C | + 150 C | Enhancement | Tube | ||||||
Mfr: RH7G03BBJFRATCB TTI: Not Assigned ROHM Semiconductor Availability: 0In StockMOSFETs Pch -40V -22A, DFN3333T8LSAB, Power MOSFET for Automotive : RH7G03BBJFRA is an automotive grade MOSFET that is AEC-Q101 qualified. Ideal for ADAS and Info. and Lighting and Body. | 0In Stock | AEFC-Q101 | Reel | |||||||||||||||||||
Mfr: RD3P100SNFRATL TTI: Not Assigned ROHM Semiconductor Availability: 0In StockMOSFETs Nch 100V Vdss 10A ID TO-252(DPAK); TO-252 | 0In Stock | Si | SMD/SMT | TO-252-3 | N-Channel | 1 Channel | 100 V | 10 A | 133 mOhms | - 20 V, 20 V | 2.5 V | 18 nC | - 55 C | + 150 C | 20 W | Enhancement | AEC-Q101 | Reel | RD3P100SNFRA | |||
0In Stock | Si | SMD/SMT | SOT-346T-3 | P-Channel | 1 Channel | 45 V | 2 A | 190 mOhms | - 20 V, 20 V | 3 V | 4.5 nC | - 55 C | + 150 C | 1 W | Enhancement | AEC-Q101 | Reel | RSR020P05HZG | ||||
0In Stock | Si | SMD/SMT | TO-252-3 | N-Channel | 1 Channel | 60 V | 80 A | 3.3 mOhms | - 20 V, 20 V | 4 V | 62 nC | - 55 C | + 175 C | 142 W | Enhancement | AEC-Q101 | Reel | |||||
0In Stock | Si | SMD/SMT | SOT-457T-6 | P-Channel | 1 Channel | 30 V | 4.5 A | 35 mOhms | - 20 V, 20 V | 2.5 V | 14 nC | - 55 C | + 150 C | 1.25 W | Enhancement | AEC-Q101 | Reel | RRQ045P03HZG | ||||
Mfr: RQ5E070BNTCL TTI: Not Assigned ROHM Semiconductor Availability: 0In StockMOSFETs Nch 30V 7Ad Si MOSFET | 0In Stock | Si | SMD/SMT | SOT-346-3 | N-Channel | 1 Channel | 30 V | 7 A | 16.1 mOhms | - 20 V, 20 V | 2.5 V | 23 nC | - 55 C | + 150 C | 1 W | Enhancement | Reel | RQ5E070BN | ||||
0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 60 V | 230 mA | 5.3 Ohms | - 20 V, 20 V | 2.5 V | - 55 C | + 150 C | 350 mW | Enhancement | Reel | BSS84 | ||||||
0In Stock | Si | Through Hole | TO-220FM-3 | N-Channel | 1 Channel | 250 V | 8 A | 600 mOhms | - 30 V, 30 V | 5 V | 15 nC | - 55 C | + 150 C | 35 W | Enhancement | Bulk | ||||||
Mfr: RSJ650N10TL TTI: Not Assigned ROHM Semiconductor Availability: 0In StockMOSFETs 4V Drive Nch MOSFET | 0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 100 V | 65 A | 9.1 mOhms | - 20 V, 20 V | 2.5 V | 260 nC | - 55 C | + 150 C | 100 W | Enhancement | Reel | RSJ650N10 | ||||
0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 2 Channel | 80 V | 3.4 A | 130 mOhms | - 20 V, 20 V | 2.5 V | 6.6 nC | - 55 C | + 150 C | 2 W | Enhancement | AEC-Q101 | Reel | SP8K41HZG | ||||
0In Stock | Si | SMD/SMT | SOP-8 | N-Channel, P-Channel | 2 Channel | 80 V | 2.6 A, 3.4 A | 130 mOhms, 240 mOhms | - 20 V, 20 V | 2.5 V, 2.5 V | 9.2 nC | - 55 C | + 150 C | 2 W | Enhancement | AEC-Q101 | Reel | SP8M41HZG | ||||
0In Stock | Si | SMD/SMT | SOP-8 | N-Channel, P-Channel | 2 Channel | 30 V | 3.5 A, 5 A | 51 mOhms, 90 mOhms | - 20 V, 20 V | 2.5 V, 2.5 V | 3.9 nC | - 55 C | + 150 C | 2 W | Enhancement | AEC-Q101 | Reel | SP8M6HZG | ||||
0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 30 V | 13 A | 8.3 mOhms | - 20 V, 20 V | 2.5 V | 25 nC | - 55 C | + 150 C | 2 W | Enhancement | AEC-Q101 | Reel | RSS130N03HZG | ||||
0In Stock | Si | SMD/SMT | DFN-1616-7T | P-Channel | 1 Channel | 30 V | 4.5 A | 48 mOhms | - 20 V, 20 V | 2.5 V | 11 nC | - 55 C | + 150 C | 1.5 W | Enhancement | Reel | RW4E045AT | |||||
0In Stock | Si | Through Hole | TO-247G-3 | N-Channel | 1 Channel | 650 V | 20 A | 205 mOhms | - 20 V, 20 V | 4 V | 61 nC | - 55 C | + 150 C | 231 W | Enhancement | Tube | R6520ENZ4 | |||||
0In Stock | Si | Through Hole | TO-3PF-3 | N-Channel | 1 Channel | 650 V | 30 A | 140 mOhms | - 20 V, 20 V | 4 V | 90 nC | - 55 C | + 150 C | 86 W | Enhancement | Tube | R6530ENZ | |||||
0In Stock | Si | SMD/SMT | TO-252-3 | N-Channel | 1 Channel | 40 V | 150 A | 2.3 mOhms | - 20 V, 20 V | 2.5 V | 56 nC | - 55 C | + 150 C | 89 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | SOT-323-3 | P-Channel | 1 Channel | 60 V | 210 mA | 5.3 Ohms | - 20 V, 20 V | 2.5 V | - 55 C | + 150 C | 300 mW | Enhancement | Reel | BSS84W |
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