IXYS - MOSFETs
2,279 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 100 V | 200 A | 7.5 mOhms | - 20 V, 20 V | 5 V | 235 nC | - 55 C | + 175 C | 830 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 250 V | 100 A | 27 mOhms | - 20 V, 20 V | 5 V | 185 nC | - 55 C | + 150 C | 600 W | Enhancement | PolarHT | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 160 A | 5.8 mOhms | - 30 V, 30 V | 2.5 V | 132 nC | - 55 C | + 175 C | 430 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 50 V | 140 A | 9 mOhms | - 15 V, 15 V | 4 V | 200 nC | - 55 C | + 150 C | 298 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 500 V | 6 A | 550 mOhms | - 20 V, 20 V | 2.5 V | 96 nC | - 55 C | + 150 C | 300 W | Depletion | Reel | |||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 1 kV | 100 mA | 80 Ohms | - 20 V, 20 V | - 55 C | + 150 C | 25 W | Enhancement | Tube | |||||||
0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 500 V | 10 A | 1 Ohms | - 20 V, 20 V | 2 V | 50 nC | - 55 C | + 150 C | 300 W | Enhancement | PolarP | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 14 A | 295 mOhms | - 30 V, 30 V | 3 V | 42 nC | - 55 C | + 150 C | 180 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFH170N25X3 TTI: IXFH170N25X3 IXYS Availability: 0In StockMOSFETs 250V/170A Ultra Junc tion X3-Class MOSFE | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 250 V | 170 A | 6.1 mOhms | - 20 V, 20 V | 2.5 V | 190 nC | - 55 C | + 150 C | 960 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 300 V | 72 A | 19 mOhms | - 20 V, 20 V | 2.5 V | 82 nC | - 55 C | + 150 C | 390 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 110 A | 18 mOhms | - 20 V, 20 V | 2.5 V | 260 nC | - 55 C | + 150 C | 600 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 15 A | 1.05 Ohms | - 30 V, 30 V | 6.5 V | 64 nC | - 55 C | + 150 C | 690 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 75 A | 21 mOhms | - 20 V, 20 V | 5.5 V | 74 nC | - 55 C | + 175 C | 360 W | Enhancement | PolarHT | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | P-Channel | 1 Channel | 500 V | 40 A | 230 mOhms | - 20 V, 20 V | 2 V | 205 nC | - 55 C | + 150 C | 890 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 200 V | 26 A | 170 mOhms | - 20 V, 20 V | 2 V | 56 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 500 V | 40 A | 170 mOhms | - 20 V, 20 V | 4.5 V | 320 nC | - 55 C | + 150 C | 540 W | Enhancement | Linear L2 | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 600 V | 32 A | 350 mOhms | - 20 V, 20 V | 4 V | 196 nC | - 55 C | + 150 C | 890 W | Enhancement | PolarP | Tube | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 1 kV | 1.6 A | 10 Ohms | - 20 V, 20 V | 4.5 V | 27 nC | - 55 C | + 150 C | 100 W | Depletion | Tube | |||||
Mfr: IXTK110N20L2 TTI: IXTK110N20L2 IXYS Availability: 0In StockMOSFETs LINEAR L2 SERIES MOSFET 200V 110A | 0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 200 V | 110 A | 24 mOhms | - 20 V, 20 V | 4.5 V | 500 nC | - 55 C | + 150 C | 960 W | Enhancement | Linear L2 | Tube | |||
0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 100 V | 52 A | 50 mOhms | - 20 V, 20 V | 4 V | 60 nC | - 55 C | + 150 C | 300 W | Enhancement | PolarP | Tube | ||||
Mfr: CPC3980ZTR TTI: CPC3980ZTR IXYS Availability: 0In StockMOSFETs N-Ch Depletion Mode Vertical DMOS FET | 0In Stock | Si | SMD/SMT | SOT-223-3 | N-Channel | 1 Channel | 800 V | 100 mA | 45 Ohms | - 15 V, 15 V | 3.1 V | - 55 C | + 125 C | 1.8 W | Depletion | Reel | |||||
Mfr: IXTA1N200P3HV TTI: IXTA1N200P3HV IXYS Availability: 0In StockMOSFETs 2000V/1A HV Power MOSFET, TO-263HV | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 2 kV | 1 A | 40 Ohms | - 20 V, 20 V | 2 V | 23.5 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | ||||
0In Stock | Si | SMD/SMT | SOT-89-3 | N-Channel | 1 Channel | 400 V | 300 mA | 9 Ohms | - 15 V, 15 V | 3.1 V | - 40 C | + 110 C | 1.1 W | Depletion | Reel | ||||||
Mfr: IXFX120N65X2 TTI: IXFX120N65X2 IXYS Availability: 0In StockMOSFETs MOSFET 650V/120A Ultra Junction X2 | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 120 A | 24 mOhms | - 30 V, 30 V | 2.7 V | 225 nC | - 55 C | + 150 C | 1.25 kW | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | P-Channel | 1 Channel | 600 V | 16 A | 720 mOhms | - 20 V, 20 V | 4 V | 92 nC | - 55 C | + 150 C | 460 W | Enhancement | PolarP | Tube |
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