IXYS - MOSFETs
2,279 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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Mfr: IXFX120N65X2 TTI: IXFX120N65X2 IXYS Availability: 0In StockMOSFETs MOSFET 650V/120A Ultra Junction X2 | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 120 A | 24 mOhms | - 30 V, 30 V | 2.7 V | 225 nC | - 55 C | + 150 C | 1.25 kW | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | P-Channel | 1 Channel | 600 V | 16 A | 720 mOhms | - 20 V, 20 V | 4 V | 92 nC | - 55 C | + 150 C | 460 W | Enhancement | PolarP | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1 kV | 800 mA | 21 Ohms | - 20 V, 20 V | 4 V | 14.6 nC | - 55 C | + 150 C | 60 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 300 V | 56 A | 27 mOhms | - 20 V, 20 V | 2.5 V | 56 nC | - 55 C | + 150 C | 320 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFH34N65X2 TTI: IXFH34N65X2 IXYS Availability: 0In StockMOSFETs MOSFET 650V/34A Ultra Junction X2 | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 34 A | 105 mOhms | - 30 V, 30 V | 2.7 V | 56 nC | - 55 C | + 150 C | 540 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 500 V | 16 A | 300 mOhms | - 20 V, 20 V | 2 V | 199 nC | - 55 C | + 150 C | 695 W | Depletion | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 100 V | 140 A | 10 mOhms | - 15 V, 15 V | 4 V | 400 nC | - 55 C | + 150 C | 568 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 150 V | 36 A | 110 mOhms | - 20 V, 20 V | 4.5 V | 55 nC | - 55 C | + 150 C | 300 W | Enhancement | PolarP | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | P-Channel | 1 Channel | 100 V | 170 A | 14 mOhms | - 20 V, 20 V | 2 V | 240 nC | - 55 C | + 150 C | 890 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 60 A | 100 mOhms | - 30 V, 30 V | 2.5 V | 610 nC | - 55 C | + 150 C | 960 W | Enhancement | Linear L2 | Tube | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 150 V | 120 A | 16 mOhms | - 20 V, 20 V | - 55 C | + 175 C | 600 W | Enhancement | HiPerFET | Tube | ||||||
0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 50 V | 140 A | 9 mOhms | - 15 V, 15 V | 2 V | 200 nC | - 55 C | + 150 C | 298 W | Enhancement | TrenchP | Tube | ||||
Mfr: IXFT120N30X3HV TTI: IXFT120N30X3HV IXYS Availability: 0In StockMOSFETs TO268 300V 120A N-CH X3CLASS | 0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 300 V | 120 A | 11 mOhms | - 20 V, 20 V | 4.5 V | 170 nC | - 55 C | + 150 C | 735 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 500 V | 60 A | 100 mOhms | - 30 V, 30 V | 4.5 V | 610 nC | - 55 C | + 150 C | 960 W | Enhancement | Linear L2 | Tube | ||||
0In Stock | Si | SMD/SMT | SOT-89-3 | N-Channel | 1 Channel | 250 V | 220 mA | 10 Ohms | - 15 V, 15 V | 3.9 V | - 55 C | + 125 C | 1.6 W | Depletion | Clare | Reel | |||||
0In Stock | Si | SMD/SMT | SOT-223-3 | N-Channel | 1 Channel | 250 V | 400 mA | 2.5 Ohms | - 15 V, 15 V | 3.1 V | - 55 C | + 110 C | 1.8 W | Depletion | Reel | ||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 44 A | 140 mOhms | - 30 V, 30 V | 3 V | 98 nC | - 55 C | + 150 C | 650 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 500 V | 94 A | 55 mOhms | - 30 V, 30 V | 3 V | 228 nC | - 55 C | + 150 C | 1.3 kW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 100 V | 90 A | 25 mOhms | - 20 V, 20 V | 2 V | 120 nC | - 55 C | + 150 C | 462 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 300 V | 160 A | 19 mOhms | - 20 V, 20 V | 5 V | 335 nC | - 55 C | + 150 C | 1.39 kW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 500 V | 10 A | 1 Ohms | - 20 V, 20 V | 4 V | 50 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 100 V | 200 A | 11 mOhms | - 20 V, 20 V | 2 V | 540 nC | - 55 C | + 150 C | 1.04 kW | Enhancement | Linear L2 | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 100 V | 200 A | 7.5 mOhms | - 20 V, 20 V | 5 V | 235 nC | - 55 C | + 175 C | 830 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 250 V | 100 A | 27 mOhms | - 20 V, 20 V | 5 V | 185 nC | - 55 C | + 150 C | 600 W | Enhancement | PolarHT | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 160 A | 5.8 mOhms | - 30 V, 30 V | 2.5 V | 132 nC | - 55 C | + 175 C | 430 W | Enhancement | HiPerFET | Tube |
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