IXYS - MOSFETs
2,279 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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300In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 24 A | 145 mOhms | - 30 V, 30 V | 3 V | 36 nC | - 55 C | + 150 C | 390 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXTP120N20X4 TTI: IXTP120N20X4 IXYS Availability: 250In StockMOSFETs 200V, 120A, Ultra junction X4, TO-220 package, MOSFET | 250In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 120 A | 9.5 mOhms | - 20 V, 20 V | 2.5 V | 108 nC | - 55 C | + 175 C | 417 W | Enhancement | Tube | ||||
250In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 800 V | 44 A | 190 mOhms | - 30 V, 30 V | 3 V | 198 nC | - 55 C | + 150 C | 1.2 mW | Enhancement | HiPerFET | Tube | ||||
300In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1 kV | 4 A | 3 Ohms | - 20 V, 20 V | 4.5 V | 39 nC | - 55 C | + 150 C | 150 W | Enhancement | HyperFET | Tube | ||||
150In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 150 V | 180 A | 11 mOhms | - 20 V, 20 V | 5 V | 240 nC | - 55 C | + 175 C | 830 W | Enhancement | HiPerFET | Tube | ||||
270In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1.5 kV | 1.83 A | 7.3 Ohms | - 30 V, 30 V | 2.5 V | - 55 C | + 150 C | 73 W | Tube | ||||||||
90In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 100 V | 140 A | 11 mOhms | - 20 V, 20 V | 5 V | 155 nC | - 55 C | + 175 C | 600 W | Enhancement | HiPerFET | Tube | ||||
240In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 100 V | 200 A | 5.5 mOhms | - 30 V, 30 V | 2.5 V | 152 nC | - 55 C | + 175 C | 550 W | Enhancement | HiPerFET | Tube | ||||
150In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | P-Channel | 1 Channel | 500 V | 11 A | 750 mOhms | - 20 V, 20 V | 5 V | 130 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | |||||
300In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 16 A | 330 mOhms | - 30 V, 30 V | 2.5 V | 43 nC | - 55 C | + 150 C | 300 W | Enhancement | Polar2 HiPerFET | Tube | ||||
Mfr: IXFH40N85X TTI: IXFH40N85X IXYS Availability: 300In StockMOSFETs 850V Ultra Junction X-Class Pwr MOSFET | 300In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 850 V | 40 A | 145 mOhms | - 30 V, 30 V | 3.5 V | 98 nC | - 55 C | + 150 C | 860 W | Enhancement | HiPerFET | Tube | |||
30In Stock | Si | Through Hole | TO-247-3 | N-Channel | 200 V | 170 A | 14 mOhms | - 20 V, 20 V | 5 V | 185 nC | - 55 C | + 175 C | 1.25 kW | Enhancement | HiPerFET | Tube | |||||
300In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 34 A | 100 mOhms | - 30 V, 30 V | 3.5 V | 56 nC | - 55 C | + 150 C | 40 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXTX110N20L2 TTI: IXTX110N20L2 IXYS Availability: 120In StockMOSFETs LINEAR L2 SERIES MOSFET 200V 110A | 120In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 110 A | 24 mOhms | - 20 V, 20 V | 4.5 V | 500 nC | - 55 C | + 150 C | 960 W | Enhancement | Linear L2 | Tube | |||
Mfr: IXFQ60N50P3 TTI: IXFQ60N50P3 IXYS Availability: 300In StockMOSFETs 500V 60A 0.1Ohm PolarP3 Power MOSFET | 300In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 500 V | 60 A | 100 mOhms | - 30 V, 30 V | 5 V | 96 nC | 1.04 mW | HiPerFET | Tube | ||||||
300In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 20 A | 185 mOhms | - 30 V, 30 V | 2.5 V | - 55 C | + 150 C | 290 W | Enhancement | HiPerFET | Tube | |||||
Mfr: IXTT60N20L2 TTI: IXTT60N20L2 IXYS Availability: 30In StockMOSFETs LINEAR L2 SERIES MOSFET 200V 60A | 30In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 200 V | 60 A | 45 mOhms | - 20 V, 20 V | 4.5 V | 255 nC | - 55 C | + 150 C | 540 W | Enhancement | Linear L2 | Tube | |||
300In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 36 A | 90 mOhms | - 20 V, 20 V | 5 V | 29 nC | - 55 C | + 150 C | 446 W | Enhancement | HiPerFET | Tube | ||||
300In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 150 V | 150 A | 7.2 mOhms | - 20 V, 20 V | 2.5 V | 105 nC | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXTT88N30P TTI: IXTT88N30P IXYS Availability: 0In Stock270 On Order Expected 31-Aug-26 MOSFETs 88 Amps 300V 0.04 Rds | 0In Stock270 On Order Expected 31-Aug-26 | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 300 V | 88 A | 40 mOhms | - 20 V, 20 V | 5 V | 180 nC | - 55 C | + 150 C | 600 W | Enhancement | PolarHT | Tube | |||
Mfr: IXTT110N10L2 TTI: IXTT110N10L2 IXYS Availability: 0In Stock820 On Order Expected MOSFETs Linear Extended FBSOA Power MOSFET | 0In Stock820 On Order Expected | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 100 V | 110 A | 18 mOhms | - 20 V, 20 V | 2.5 V | 260 nC | - 55 C | + 150 C | 600 W | Enhancement | Tube | ||||
0In Stock | Si | SMD/SMT | SOT-89-3 | N-Channel | 1 Channel | 250 V | 360 mA | 4 Ohms | - 15 V, 15 V | - 55 C | + 125 C | 1.1 W | Depletion | Clare | Reel | ||||||
0In Stock | Si | SMD/SMT | SOT-223-3 | N-Channel | 1 Channel | 350 V | 5 mA | 14 Ohms | - 20 V, 20 V | 3.6 V | - 40 C | + 85 C | 2.5 W | Depletion | Clare | Reel | |||||
Mfr: IXTT12N150 TTI: IXTT12N150 IXYS Availability: 0In Stock300 On Order Expected 24-Jun-26 MOSFETs 1500V High Voltage Power MOSFET | 0In Stock300 On Order Expected 24-Jun-26 | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 1.2 kV | 12 A | 2 Ohms | - 30 V, 30 V | 4.5 V | 106 nC | - 55 C | + 150 C | 890 W | Enhancement | Tube | ||||
Mfr: IXFH80N65X2 TTI: IXFH80N65X2 IXYS Availability: 0In StockMOSFETs MOSFET 650V/80A Ultra Junction X2 | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 80 A | 40 mOhms | - 30 V, 30 V | 2.7 V | 143 nC | - 55 C | + 150 C | 890 W | Enhancement | HiPerFET | Tube |
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