IXYS - MOSFETs
2,279 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 1 kV | 20 A | 390 mOhms | 30 V | - 55 C | + 150 C | 780 W | Enhancement | HiPerFET | Tube | ||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 9 A | 1.04 Ohms | 30 V | - 55 C | + 150 C | 230 W | Enhancement | HiPerFET | Tube | ||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 15 A | 430 mOhms | 30 V | 6.5 V | 197 nC | - 55 C | + 150 C | 290 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | PLUS-264-3 | N-Channel | 1 Channel | 200 V | 210 A | 10.5 mOhms | 20 V | - 55 C | + 175 C | 1.5 kW | HiPerFET | Tube | |||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 75 V | 230 A | 4.2 mOhms | 20 V | 2 V | 178 nC | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFR40N90P TTI: IXFR40N90P IXYS Availability: 0In StockMOSFETs PolarHV HiPerFETs 500V-1.2Kv Red Rds | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 900 V | 21 A | 230 mOhms | 30 V | 6.5 V | 230 nC | - 55 C | + 150 C | 300 W | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 55 V | 200 A | 3.3 mOhms | 20 V | 4 V | 109 nC | - 55 C | + 175 C | 360 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | TO-263-7 | N-Channel | 1 Channel | 55 V | 260 A | 3.3 mOhms | 20 V | 4 V | 140 nC | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | ||||
Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 50 A | 45 mOhms | 20 V | - 55 C | + 150 C | 300 W | Enhancement | HyperFET | Tube | ||||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 800 V | 40 A | 150 mOhms | 30 V | 5 V | 250 nC | - 55 C | + 150 C | 625 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 3.5 A | 3 Ohms | 20 V | - 40 C | + 150 C | 80 W | Enhancement | HiPerFET | Tube | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 6 A | 500 mOhms | 30 V | - 55 C | + 150 C | 50 W | Enhancement | Tube | |||||||
Not Available Online | Si | Through Hole | ISOPLUS-264-5 | N-Channel | 2 Channel | 600 V | 47 A | 45 mOhms | 20 V | 2.5 V | 190 nC | - 55 C | + 150 C | 480 W | Enhancement | CoolMOS | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 250 V | 120 A | 24 mOhms | 20 V | 5 V | 185 nC | - 55 C | + 175 C | 700 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 300 V | 60 A | 36 mOhms | 20 V | 5 V | 224 nC | - 55 C | + 150 C | 250 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 300 V | 69 A | 49 mOhms | 20 V | - 55 C | + 150 C | 500 W | Enhancement | HiPerFET | Tube | ||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 500 V | 20 A | 300 mOhms | HiPerFET | Tube | ||||||||||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 500 V | 63 A | 43 mOhms | 30 V | 3 V | 267 nC | - 55 C | + 150 C | 520 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 156 A | 8 mOhms | 20 V | 3 V | 358 nC | - 55 C | + 175 C | 600 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | TO-247-SMD-3 | Reel | |||||||||||||||||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 100 V | 195 A | 8 mOhms | Tube | |||||||||||||
0In Stock | Si | Through Hole | TO-3P-3 | P-Channel | 1 Channel | 200 V | 32 A | 130 mOhms | 15 V | 2 V | 185 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 150 V | 76 A | 22 mOhms | 20 V | 2.5 V | 97 nC | - 55 C | + 175 C | 350 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 75 V | 230 A | 4.2 mOhms | 20 V | 2 V | 178 nC | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.5 kV | 2 A | 9.2 Ohms | 30 V | 5 V | 28 nC | - 55 C | + 150 C | 170 W | Enhancement | Tube |