IXYS - MOSFETs
2,278 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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Mfr: IXFT140N20X3HV TTI: IXFT140N20X3HV IXYS Availability: 0In StockMOSFETs TO268 200V 140A N-CH X3CLASS | 0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 200 V | 140 A | 9.6 mOhms | - 20 V, 20 V | 2.5 V | 127 nC | - 55 C | + 150 C | 480 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1.5 kV | 20 A | 1 Ohms | Tube | |||||||||||||
0In Stock | Si | Tube | |||||||||||||||||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 1 kV | 1.4 A | 11.8 Ohms | - 20 V, 20 V | 2.5 V | 17.8 nC | - 55 C | + 150 C | 63 W | Enhancement | Polar | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 26 A | 130 mOhms | - 30 V, 30 V | 5 V | 45 nC | - 55 C | + 150 C | 460 W | Enhancement | Tube | |||||
0In Stock | Si | Tube | |||||||||||||||||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 650 V | 12 A | 310 mOhms | - 30 V, 30 V | 3 V | 18.5 nC | - 55 C | + 150 C | 180 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 18 A | 200 mOhms | - 30 V, 30 V | 3 V | 29 nC | - 55 C | + 150 C | 36 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFQ28N60P3 TTI: IXFQ28N60P3 IXYS Availability: 0In StockMOSFETs 600V 28A 0.26Ohm PolarP3 Power MOSFET | 0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 600 V | 28 A | 260 mOhms | - 30 V, 30 V | 5 V | 50 nC | - 55 C | + 150 C | 695 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 6 A | 500 mOhms | - 30 V, 30 V | - 55 C | + 150 C | 50 W | Enhancement | Tube | |||||||
Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 50 A | 45 mOhms | - 20 V, 20 V | - 55 C | + 150 C | 300 W | Enhancement | HyperFET | Tube | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 75 V | 230 A | 4.2 mOhms | - 20 V, 20 V | 2 V | 178 nC | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | HiPerFET | Tube | ||||||||||||||||||
0In Stock | Si | Reel | |||||||||||||||||||
0In Stock | Si | SMD/SMT | TO-247-SMD-3 | Reel | |||||||||||||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 300 V | 60 A | 36 mOhms | - 20 V, 20 V | 5 V | 224 nC | - 55 C | + 150 C | 250 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 300 V | 69 A | 49 mOhms | - 20 V, 20 V | - 55 C | + 150 C | 500 W | Enhancement | HiPerFET | Tube | ||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 40 A | 140 mOhms | - 30 V, 30 V | - 55 C | + 150 C | 500 W | Enhancement | HiPerFET | Tube | ||||||
Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 35 A | 90 mOhms | - 20 V, 20 V | 3 V | 60 nC | - 55 C | + 150 C | Enhancement | CoolMOS | Tube | |||||
Not Available Online | Si | Through Hole | ISOPLUS-264-5 | N-Channel | 2 Channel | 600 V | 47 A | 45 mOhms | - 20 V, 20 V | 2.5 V | 190 nC | - 55 C | + 150 C | 480 W | Enhancement | CoolMOS | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 150 V | 90 A | 20 mOhms | - 30 V, 30 V | - 55 C | + 175 C | 455 W | Enhancement | Tube | |||||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 800 V | 40 A | 150 mOhms | - 30 V, 30 V | 5 V | 250 nC | - 55 C | + 150 C | 625 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 250 V | 76 A | 42 mOhms | - 20 V, 20 V | 5 V | 92 nC | - 55 C | + 150 C | 460 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 1 kV | 20 A | 390 mOhms | - 30 V, 30 V | - 55 C | + 150 C | 780 W | Enhancement | HiPerFET | Tube | ||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 200 V | 86 A | 29 Ohms | Tube |
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