IXYS - MOSFETs
2,278 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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Mfr: IXFB52N90P TTI: IXFB52N90P IXYS Availability: 0In StockMOSFETs PolarHV HiPerFETs 500V-1.2Kv Red Rds | 0In Stock | Si | Through Hole | PLUS-264-3 | N-Channel | 1 Channel | 900 V | 52 A | 160 mOhms | - 30 V, 30 V | 6.5 V | 308 nC | - 55 C | + 150 C | 1.25 kW | Enhancement | HiPerFET | Tube | |||
Mfr: IXFA26N50P3 TTI: IXFA26N50P3 IXYS Availability: 0In StockMOSFETs N-Channel: Power MOSFET w/Fast Diode | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 500 V | 26 A | 240 mOhms | HiPerFET | Tube | ||||||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 54 A | 59 mOhms | - 20 V, 20 V | 5.2 V | 49 nC | - 55 C | + 150 C | 625 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 44 A | 130 mOhms | - 20 V, 20 V | 4.5 V | 330 nC | - 55 C | + 150 C | 560 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 102 A | 30 mOhms | - 30 V, 30 V | 3 V | 152 nC | - 55 C | + 150 C | 1.04 kW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 1.5 kV | 4 A | 6 Ohms | - 30 V, 30 V | 2.5 V | 375 nC | - 55 C | + 150 C | 280 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 150 V | 180 A | 11 mOhms | - 20 V, 20 V | - 55 C | + 175 C | 830 W | Enhancement | HiPerFET | Tube | ||||||
0In Stock | Si | SMD/SMT | TO-263-7 | N-Channel | 1 Channel | 100 V | 160 A | 7 mOhms | - 55 C | + 175 C | 430 W | Enhancement | HiPerFET | Tube | |||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 54 A | 33 mOhms | - 30 V, 30 V | 3 V | 152 nC | - 55 C | + 150 C | 330 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 2 kV | 3 A | 8 Ohms | - 20 V, 20 V | 3 V | - 55 C | + 150 C | 520 W | Polar3 | Tube | |||||||
0In Stock | Si | Tube | |||||||||||||||||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 150 V | 110 A | 11 mOhms | - 20 V, 20 V | 2.5 V | 150 nC | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 40 V | 220 A | 2.8 mOhms | - 20 V, 20 V | 4 V | 112 nC | - 55 C | + 175 C | 360 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFR32N100Q3 TTI: IXFR32N100Q3 IXYS Availability: 0In StockMOSFETs Q3Class HiPerFET Pwr MOSFET 1000V/23A | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 23 A | 350 mOhms | - 30 V, 30 V | 3.5 V | 195 nC | - 55 C | + 150 C | 570 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 40 V | 300 A | 2.5 mOhms | - 20 V, 20 V | 2 V | 145 nC | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFT40N85XHV TTI: IXFT40N85XHV IXYS Availability: 0In StockMOSFETs 850V Ultra Junction X-Class Pwr MOSFET | 0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 850 V | 40 A | 145 mOhms | - 30 V, 30 V | 3.5 V | 98 nC | - 55 C | + 150 C | 860 W | Enhancement | HiPerFET | Tube | |||
Mfr: IXTP8N70X2 TTI: IXTP8N70X2 IXYS Availability: 0In StockMOSFETs 700V/8A Ultra Junct X2-Class MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 700 V | 8 A | 500 mOhms | - 30 V, 30 V | 3 V | 12 nC | - 55 C | + 150 C | 150 W | Enhancement | HiPerFET | Tube | |||
Mfr: IXFK120N65X2 TTI: IXFK120N65X2 IXYS Availability: 0In StockMOSFETs MOSFET 650V/120A Ultra Junction X2 | 0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 650 V | 120 A | 24 mOhms | - 30 V, 30 V | 2.7 V | 225 nC | - 55 C | + 150 C | 1.25 kW | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 100 V | 26 A | 90 mOhms | - 15 V, 15 V | 4.5 V | 52 nC | - 55 C | + 150 C | 150 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 300 V | 120 A | 24 mOhms | - 20 V, 20 V | 5 V | 265 nC | - 55 C | + 150 C | 960 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Tube | |||||||||||||||||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 100 V | 160 A | 7 mOhms | - 55 C | + 175 C | 430 W | Enhancement | HiPerFET | Tube | |||||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 100 V | 180 A | 6.4 mOhms | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | |||||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 200 V | 74 A | 34 mOhms | - 20 V, 20 V | 2.5 V | 107 nC | - 55 C | + 175 C | 400 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 48 A | 135 mOhms | - 30 V, 30 V | 3 V | 150 nC | - 55 C | + 150 C | 830 W | Enhancement | HiPerFET | Tube |
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