IXYS - MOSFETs
2,279 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 26 A | 130 mOhms | - 30 V, 30 V | 5 V | 45 nC | - 55 C | + 150 C | 460 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 300 V | 102 A | 33 mOhms | - 20 V, 20 V | 5 V | 224 nC | - 55 C | + 150 C | 700 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 1 kV | 2.3 A | 2.8 Ohms | - 30 V, 30 V | 3 V | 33.4 nC | - 55 C | + 150 C | 42 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFK66N85X TTI: IXFK66N85X IXYS Availability: 0In StockMOSFETs 850V Ultra Junction X-Class Pwr MOSFET | 0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 850 V | 66 A | 65 mOhms | - 30 V, 30 V | 3.5 V | 230 nC | - 55 C | + 150 C | 1.25 kW | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Tube | |||||||||||||||||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 75 V | 170 A | 5.4 mOhms | - 20 V, 20 V | 2 V | 109 nC | - 55 C | + 175 C | 360 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 60 A | 40 mOhms | HiPerFET | Tube | |||||||||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 1 kV | 1.4 A | 11.8 Ohms | - 20 V, 20 V | 2.5 V | 17.8 nC | - 55 C | + 150 C | 63 W | Enhancement | Polar | Reel | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 200 V | 220 A | 6.2 mOhms | - 20 V, 20 V | 2.5 V | 204 nC | - 55 C | + 150 C | 890 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Tube | |||||||||||||||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.5 kV | 3 A | 3.85 Ohms | - 30 V, 30 V | 2.5 V | 67 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | |||||
Mfr: IXFX64N60Q3 TTI: IXFX64N60Q3 IXYS Availability: 0In StockMOSFETs Q3Class HiPerFET Pwr MOSFET 600V/64A | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 64 A | 95 mOhms | - 30 V, 30 V | 190 nC | 1.25 kW | HiPerFET | Tube | |||||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 2.5 kV | 5 A | 8.8 Ohms | - 30 V, 30 V | 5 V | 200 nC | - 55 C | + 150 C | 960 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 50 A | 30 mOhms | - 20 V, 20 V | 2.5 V | 33 nC | - 55 C | + 150 C | 240 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 200 V | 72 A | 20 mOhms | - 20 V, 20 V | 2.5 V | 55 nC | - 55 C | + 150 C | 320 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 650 V | 20 A | 185 mOhms | - 30 V, 30 V | 2.5 V | 27 nC | - 55 C | + 150 C | 290 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 55 V | 260 A | 3.3 mOhms | - 20 V, 20 V | 2 V | 140 nC | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 650 V | 34 A | 96 mOhms | - 30 V, 30 V | 3 V | 54 nC | - 55 C | + 150 C | 540 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXTT140N075L2HV-TR TTI: IXTT140N075L2HV-TR IXYS Availability: 0In StockMOSFETs TO268 N-CH 75V 140A | 0In Stock | Si | Reel | ||||||||||||||||||
Mfr: IXFX300N20X3 TTI: IXFX300N20X3 IXYS Availability: 0In StockMOSFETs N-Ch 200V Enh FET 200Vdgr 300A 4mOhm | 0In Stock | Si | Through Hole | TO-247-PLUS-3 | N-Channel | 1 Channel | 200 V | 300 A | 4 mOhms | - 20 V, 20 V | 2.5 V | 375 nC | - 55 C | + 150 C | 1.25 mW | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 24 A | 400 mOhms | - 20 V, 20 V | 5.5 V | 267 nC | - 55 C | + 150 C | 568 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-PLUS-3 | N-Channel | 1 Channel | 250 V | 240 A | 5 mOhms | - 20 V, 20 V | 2.5 V | 345 nC | - 55 C | + 150 C | 1.25 mW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | ISOPLUS-i4-PAK-3 | N-Channel | 3 kV | 1.6 A | 21 Ohms | - 20 V, 20 V | 3 V | - 55 C | + 150 C | 160 W | Polar3 | Tube | |||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 700 V | 12 A | 300 mOhms | - 30 V, 30 V | 2.5 V | - 55 C | + 150 C | 180 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | TO-3P | N-Channel | 200 V | 130 A | 16 mOhms | - 20 V, 20 V | 2.5 V | - 55 C | + 175 C | 830 W | HiPerFET | Tube |
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