IXYS - MOSFETs
2,279 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 175 V | 150 A | 9.7 mOhms | 20 V | 2.5 V | 233 nC | - 55 C | + 175 C | 880 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 86 A | 13 mOhms | 20 V | 4.5 V | 70 nC | - 55 C | + 175 C | 300 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-PLUS-3 | N-Channel | 1 Channel | 300 V | 210 A | 5.5 mOhms | 20 V | 2.5 V | 375 nC | - 55 C | + 150 C | 1.25 mW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | HiPerFET | Tube | ||||||||||||||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 2 kV | 6 A | 4 Ohms | 20 V | 3 V | 143 nC | - 55 C | + 150 C | 960 W | Enhancement | Polar3 | Tube | ||||
0In Stock | Si | Tube | |||||||||||||||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 72 A | 20 mOhms | 20 V | 2.5 V | 55 nC | - 55 C | + 150 C | 36 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-3P | N-Channel | 1 Channel | 250 V | 120 A | 12 mOhms | 20 V | 2.5 V | 122 nC | - 55 C | + 150 C | 480 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 250 V | 44 A | 75 mOhms | 20 V | 2.5 V | - 55 C | + 150 C | 400 W | Linear L2T | Tube | |||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 250 V | 86 A | 37 mOhms | 20 V | 3 V | - 55 C | + 150 C | 540 W | HiPerFET | Tube | |||||||
0In Stock | Si | Tube | |||||||||||||||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 850 V | 9.5 A | 360 mOhms | 30 V | 3.5 V | 63 nC | - 55 C | + 150 C | 110 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 200 V | 32 A | 130 mOhms | Tube | |||||||||||||
Mfr: IXFK80N50Q3 TTI: IXFK80N50Q3 IXYS Availability: 0In StockMOSFETs Q3Class HiPerFET Pwr MOSFET 500V/80A | 0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 500 V | 80 A | 65 mOhms | 30 V | 3.5 V | 200 nC | - 55 C | + 150 C | 1.25 kW | Enhancement | HiPerFET | Tube | |||
Mfr: IXFL210N30P3 TTI: IXFL210N30P3 IXYS Availability: 0In StockMOSFETs N-Channel: Power MOSFET w/Fast Diode | 0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 300 V | 108 A | 16 mOhms | 20 V | 2.5 V | 268 nC | - 55 C | + 150 C | 520 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 500 V | 34 A | 180 mOhms | HiPerFET | Tube | ||||||||||||
Mfr: IXFA26N50P3 TTI: IXFA26N50P3 IXYS Availability: 0In StockMOSFETs N-Channel: Power MOSFET w/Fast Diode | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 500 V | 26 A | 240 mOhms | HiPerFET | Tube | ||||||||||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 100 V | 110 A | 11 mOhms | Tube | |||||||||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 8 A | 320 mOhms | 30 V | 3.5 V | 113 nC | - 55 C | + 150 C | 860 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | TO-263-7 | N-Channel | 1 Channel | 75 V | 230 A | 4.2 mOhms | 20 V | 2 V | 178 nC | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 102 A | 30 mOhms | 30 V | 3 V | 152 nC | - 55 C | + 150 C | 1.04 kW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 1.5 kV | 4 A | 6 Ohms | 30 V | 2.5 V | 375 nC | - 55 C | + 150 C | 280 W | Enhancement | Tube | |||||
Mfr: IXFK120N65X2 TTI: IXFK120N65X2 IXYS Availability: 0In StockMOSFETs MOSFET 650V/120A Ultra Junction X2 | 0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 650 V | 120 A | 24 mOhms | 30 V | 2.7 V | 225 nC | - 55 C | + 150 C | 1.25 kW | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 40 V | 300 A | 2.5 mOhms | 20 V | 2 V | 145 nC | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 300 V | 120 A | 24 mOhms | 20 V | 5 V | 265 nC | - 55 C | + 150 C | 960 W | Enhancement | HiPerFET | Tube |
