IXYS - MOSFETs
2,278 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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0In Stock | Si | SMD/SMT | SOT-89-3 | N-Channel | 1 Channel | 250 V | 360 mA | 4 Ohms | - 15 V, 15 V | - 55 C | + 125 C | 1.1 W | Depletion | Clare | Reel | ||||||
Mfr: IXTT30N60L2 TTI: IXTT30N60L2 IXYS Availability: 0In Stock300 On Order Expected 19-Oct-26 MOSFETs 30 Amps 600V | 0In Stock300 On Order Expected 19-Oct-26 | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 600 V | 30 A | 240 mOhms | - 20 V, 20 V | 4.5 V | 335 nC | - 55 C | + 150 C | 540 W | Enhancement | Tube | ||||
0In Stock900 On Order Expected 28-Oct-26 | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1.2 kV | 3 A | 4.5 Ohms | - 20 V, 20 V | 2.5 V | 42 nC | - 55 C | + 150 C | 200 W | Enhancement | Tube | |||||
Mfr: IXTH20P50P TTI: IXTH20P50P IXYS Availability: 0In Stock300 On Order Expected 07-Jan-27 MOSFETs -20.0 Amps -500V 0.450 Rds | 0In Stock300 On Order Expected 07-Jan-27 | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 500 V | 20 A | 450 mOhms | - 20 V, 20 V | 2 V | 103 nC | - 55 C | + 150 C | 460 W | Enhancement | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 300 V | 150 A | 8.3 mOhms | - 20 V, 20 V | 2.5 V | 254 nC | - 55 C | + 150 C | 890 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 300 V | 140 A | 24 mOhms | - 20 V, 20 V | 3 V | 185 nC | - 55 C | + 150 C | 1.04 kW | Enhancement | HiPerFET | Tube | ||||
Mfr: IXTT16N20D2 TTI: IXTT16N20D2 IXYS Availability: 0In Stock20 On Order Expected 20-Jan-27 MOSFETs D2 Depletion Mode Power MOSFETs | 0In Stock20 On Order Expected 20-Jan-27 | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 200 V | 16 A | 73 mOhms | - 20 V, 20 V | 4.5 V | 208 nC | - 55 C | + 150 C | 695 W | Depletion | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 85 V | 96 A | 13 mOhms | - 15 V, 15 V | 2 V | 180 nC | - 55 C | + 150 C | 298 W | Enhancement | Trench | Reel | ||||
Mfr: IXTY01N100D TTI: IXTY01N100D IXYS Availability: 0In StockMOSFETs MOSFET N-CH DEPLETN 1000V 100MA TO-25 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 1 kV | 100 mA | 80 Ohms | - 20 V, 20 V | 4.5 V | 5.8 nC | - 55 C | + 150 C | 1.1 W | Depletion | Tube | ||||
Mfr: IXFT120N15P TTI: IXFT120N15P IXYS Availability: 0In Stock300 On Order Expected 14-Sep-26 MOSFETs 120 Amps 150V 0.016 Rds | 0In Stock300 On Order Expected 14-Sep-26 | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 150 V | 120 A | 16 mOhms | - 20 V, 20 V | - 55 C | + 175 C | 600 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 150 V | 120 A | 16 mOhms | - 20 V, 20 V | 5 V | 150 nC | - 55 C | + 175 C | 600 W | Enhancement | PolarHT | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 500 V | 800 mA | 4.6 Ohms | - 20 V, 20 V | 4.5 V | 12.7 nC | - 55 C | + 150 C | 60 W | Depletion | Tube | |||||
Mfr: IXTA140P05T TTI: IXTA140P05T IXYS Availability: 0In Stock350 On Order Expected 18-Mar-27 MOSFETs -140 Amps -50V 0.008 Rds | 0In Stock350 On Order Expected 18-Mar-27 | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 50 V | 140 A | 9 mOhms | - 15 V, 15 V | 4 V | 200 nC | - 55 C | + 150 C | 298 W | Enhancement | Tube | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 3 kV | 1 A | 50 Ohms | - 20 V, 20 V | 2 V | 30.6 nC | - 55 C | + 150 C | 195 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 4.5 kV | 3 A | 80 Ohms | - 20 V, 20 V | 3.5 V | 46 nC | - 55 C | + 150 C | 520 W | Enhancement | Tube | |||||
Mfr: IXTA1N200P3HV TTI: IXTA1N200P3HV IXYS Availability: 0In StockMOSFETs 2000V/1A HV Power MOSFET, TO-263HV | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 2 kV | 1 A | 40 Ohms | - 20 V, 20 V | 2 V | 23.5 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | ||||
0In Stock | Si | SMD/SMT | SOT-223-3 | N-Channel | 1 Channel | 350 V | 5 mA | 14 Ohms | - 20 V, 20 V | 3.6 V | - 40 C | + 85 C | 2.5 W | Depletion | Clare | Reel | |||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 500 V | 48 A | 100 mOhms | - 20 V, 20 V | - 55 C | + 150 C | 500 W | Enhancement | HyperFET | Tube | ||||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 150 V | 150 A | 13 mOhms | - 20 V, 20 V | 5 V | 190 nC | - 55 C | + 175 C | 714 W | Enhancement | PolarHT | Tube | ||||
Mfr: IXFH80N65X2 TTI: IXFH80N65X2 IXYS Availability: 0In Stock60 On Order Expected 22-Jan-27 MOSFETs MOSFET 650V/80A Ultra Junction X2 | 0In Stock60 On Order Expected 22-Jan-27 | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 80 A | 40 mOhms | - 30 V, 30 V | 2.7 V | 143 nC | - 55 C | + 150 C | 890 W | Enhancement | HiPerFET | Tube | |||
Mfr: IXFH340N075T2 TTI: IXFH340N075T2 IXYS Availability: 0In Stock510 On Order Expected 13-Apr-27 MOSFETs TRENCHT2 HIPERFET PWR MOSFET 75V 340A | 0In Stock510 On Order Expected 13-Apr-27 | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 75 V | 340 A | 3.2 mOhms | - 20 V, 20 V | 4 V | 300 nC | - 55 C | + 175 C | 935 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Reel | |||||||||||||||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 50 A | 60 mOhms | - 20 V, 20 V | 2.5 V | 70 nC | - 55 C | + 175 C | 360 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 600 V | 64 A | 96 mOhms | - 30 V, 30 V | - 55 C | + 150 C | 1.04 mW | Enhancement | HiPerFET | Tube | ||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 4.5 kV | 200 mA | 625 Ohms | - 20 V, 20 V | 4 V | 10.6 nC | - 55 C | + 150 C | 113 W | Enhancement | Tube |
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