IXYS - MOSFETs
2,279 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: IXFQ50N50P3 TTI: IXFQ50N50P3 IXYS Availability: 0In StockMOSFETs N-Channel: Power MOSFET w/Fast Diode | 0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 500 V | 50 A | 125 mOhms | 30 V | 5 V | 85 nC | - 55 C | + 150 C | 960 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 650 V | 102 A | 30 mOhms | 30 V | 3 V | 152 nC | - 55 C | + 150 C | 1.04 kW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1.7 kV | 16 A | 20 V | 2.5 V | 65 nC | - 55 C | + 150 C | 150 W | Enhancement | BIMOSFET | Tube | |||||
0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 1 kV | 2.1 A | 3.3 Ohms | 20 V | 3 V | 26 nC | - 55 C | + 150 C | 40 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 64 A | 32 mOhms | 20 V | 2.5 V | 100 nC | - 55 C | + 150 C | 357 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 1.5 kV | 12 A | 2.2 Ohms | 30 V | 2.5 V | 106 nC | - 55 C | + 150 C | 890 W | Enhancement | Tube | |||||
Mfr: IXFX66N85X TTI: IXFX66N85X IXYS Availability: 0In StockMOSFETs 850V Ultra Junction X-Class Pwr MOSFET | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 850 V | 66 A | 65 mOhms | 30 V | 3.5 V | 230 nC | - 55 C | + 150 C | 1.25 kW | Enhancement | HiPerFET | Tube | |||
Mfr: IXFR24N100Q3 TTI: IXFR24N100Q3 IXYS Availability: 0In StockMOSFETs Q3Class HiPerFET Pwr MOSFET 1000V/18A | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 18 A | 490 mOhms | 30 V | 140 nC | 500 W | HiPerFET | Tube | |||||||
Mfr: IXFT70N20Q3 TTI: IXFT70N20Q3 IXYS Availability: 0In StockMOSFETs Q3Class HiPerFET Pwr MOSFET 200V/70A | 0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 200 V | 70 A | 40 mOhms | 30 V | 3.5 V | 67 nC | - 55 C | + 150 C | 690 W | Enhancement | HiPerFET | Tube | |||
Mfr: IXFA230N075T2-7 TTI: IXFA230N075T2-7 IXYS Availability: 0In StockMOSFETs TrenchT2 HiperFETs Power MOSFET | 0In Stock | Si | SMD/SMT | TO-263AA-3 | N-Channel | 1 Channel | 75 V | 230 A | 4.2 mOhms | 20 V | 2 V | 178 nC | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | |||
Mfr: IXFX220N17T2 TTI: IXFX220N17T2 IXYS Availability: 0In StockMOSFETs GigaMOS Trench T2 HiperFET Pwr MOSFET | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 170 V | 220 A | 6.3 mOhms | 20 V | 2.5 V | 500 nC | - 55 C | + 175 C | 1.25 mW | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 250 A | 6.5 mOhms | 20 V | 3 V | 205 nC | - 55 C | + 175 C | 1.25 mW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | HiPerFET | Tube | ||||||||||||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 850 V | 14 A | 550 mOhms | 30 V | 3.5 V | 30 nC | - 55 C | + 150 C | 460 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | HiPerFET | Tube | ||||||||||||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 20 A | 200 mOhms | 30 V | 3 V | 102 nC | - 55 C | + 150 C | 208 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 800 V | 16 A | 600 mOhms | 30 V | - 55 C | + 150 C | 460 W | Enhancement | HiPerFET | Tube | ||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 32 A | 270 mOhms | 30 V | - 55 C | + 150 C | 830 W | Enhancement | HiPerFET | Tube | ||||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 150 V | 96 A | 24 mOhms | 20 V | 5 V | 110 nC | - 55 C | + 175 C | 480 W | Enhancement | PolarHT | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 250 V | 42 A | 84 mOhms | 20 V | - 55 C | + 150 C | 300 W | Enhancement | Tube | |||||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 250 V | 42 A | 84 mOhms | 20 V | 5.5 V | 70 nC | - 55 C | + 150 C | 300 W | Enhancement | PolarHT | Tube | ||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 500 V | 16 A | 400 mOhms | 30 V | 3 V | 43 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 14 A | 450 mOhms | 30 V | 5.5 V | 36 nC | - 55 C | + 150 C | 300 W | Enhancement | PolarHV | Tube | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | P-Channel | 1 Channel | 200 V | 24 A | 150 mOhms | 20 V | - 55 C | + 150 C | 300 W | Enhancement | Tube | |||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 133 A | 9 mOhms | 20 V | 5 V | 235 nC | - 55 C | + 175 C | 300 W | Enhancement | HiPerFET | Tube |