IXYS - MOSFETs
2,279 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Not Available Online | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 200 V | 90 A | 22 mOhms | 20 V | - 55 C | + 150 C | 500 W | Enhancement | HiPerFET | Tube | ||||||
Not Available Online | Si | Through Hole | PLUS-264-3 | N-Channel | 1 Channel | 800 V | 50 A | 150 mOhms | 30 V | - 55 C | + 150 C | 890 W | Enhancement | HiPerFET | Tube | ||||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 100 V | 110 A | 15 mOhms | 20 V | 5 V | 110 nC | - 55 C | + 175 C | 480 W | Enhancement | PolarHT | Tube | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 100 V | 170 A | 9 mOhms | 20 V | - 55 C | + 175 C | 714 W | Enhancement | Tube | |||||||
Not Available Online | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 300 V | 36 A | 110 mOhms | 20 V | 2.5 V | 30 nC | - 55 C | + 150 C | 347 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | Reel | |||||||||||||||||
Not Available Online | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 60 A | 18 mOhms | 20 V | 2.5 V | 49 nC | - 55 C | + 175 C | 176 W | Enhancement | Trench | Reel | ||||
Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 94 A | 55 mOhms | 30 V | 3 V | 228 nC | - 55 C | + 150 C | 1.3 kW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 50 A | 73 mOhms | 30 V | 2.5 V | 116 nC | - 55 C | + 150 C | 660 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 600 V | 30 A | 155 mOhms | 30 V | 2.5 V | 56 nC | - 55 C | + 150 C | 500 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-PLUS-3 | N-Channel | 1 Channel | 600 V | 90 A | 38 mOhms | 30 V | 2.5 V | 210 nC | - 55 C | + 150 C | 1.1 kW | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFT80N085 TTI: Not Assigned IXYS Availability: Not Available OnlineMOSFETs MOSFET, INTR DIODE 85V, 80A | Not Available Online | Si | SMD/SMT | TO-268-3 | N-Channel | 1 Channel | 85 V | 80 A | 9 mOhms | 20 V | - 55 C | + 150 C | 300 W | Enhancement | HyperFET | Tube | |||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 250 V | 102 A | 29 Ohms | Tube | ||||||||||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 300 V | 54 A | 72 Ohms | Tube | |||||||||||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 300 V | 60 A | 60 Ohms | Tube | ||||||||||||
0In Stock | Si | SMD/SMT | TO-268-3 | P-Channel | 1 Channel | 200 V | 16 A | 160 mOhms | Tube | ||||||||||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 200 V | 15 A | 180 Ohms | Tube | |||||||||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 300 V | 72 A | 52 Ohms | Tube | |||||||||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 200 V | 98 A | 26 Ohms | Tube | |||||||||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 40 V | 230 A | 2.9 mOhms | 15 V | 2 V | 140 nC | - 55 C | + 175 C | 340 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Reel | |||||||||||||||||||
Not Available Online | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 100 V | 180 A | 8 mOhms | 20 V | 2 V | 390 nC | - 55 C | + 150 C | 560 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFL38N100Q2 TTI: Not Assigned IXYS Availability: Not Available OnlineMOSFETs Q2-Class HiperFET 1000, 22A | Not Available Online | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 1 kV | 22 A | 280 mOhms | 30 V | - 55 C | + 150 C | 380 W | Enhancement | HiPerFET | Tube | |||||
Mfr: IXFK60N55Q2 TTI: Not Assigned IXYS Availability: Not Available OnlineMOSFETs 60 Amps 550V 0.09 Rds | Not Available Online | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 550 V | 60 A | 88 mOhms | 30 V | 4.5 V | 200 nC | - 55 C | + 150 C | 735 W | Enhancement | HyperFET | Tube | |||
Mfr: IXFX60N55Q2 TTI: Not Assigned IXYS Availability: Not Available OnlineMOSFETs 60 Amps 550V 0.09 Rds | Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 550 V | 60 A | 88 mOhms | 30 V | - 55 C | + 150 C | 735 W | Enhancement | HyperFET | Tube |
