IXYS - MOSFETs
2,279 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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210In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 6 A | 2.4 Ohms | - 20 V, 20 V | 2.5 V | 56 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | |||||
150In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 85 V | 96 A | 13 mOhms | - 15 V, 15 V | 2 V | 180 nC | - 55 C | + 150 C | 298 W | Enhancement | Tube | |||||
600In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 100 V | 76 A | 24 mOhms | - 15 V, 15 V | 2 V | 197 nC | - 55 C | + 150 C | 298 W | Enhancement | Tube | |||||
Mfr: IXFH320N10T2 TTI: IXFH320N10T2 IXYS Availability: 210In StockMOSFETs TRENCHT2 HIPERFET PWR MOSFET 100V 320A | 210In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 320 A | 3.5 mOhms | - 20 V, 20 V | 4 V | 430 nC | - 55 C | + 175 C | 1 kW | Enhancement | HiPerFET | Tube | |||
Mfr: IXTA1R6N100D2 TTI: IXTA1R6N100D2 IXYS Availability: 150In StockMOSFETs N-CH MOSFETS (D2) 1000V 800MA | 150In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1 kV | 1.6 A | 10 Ohms | - 20 V, 20 V | 4.5 V | 27 nC | - 55 C | + 150 C | 100 W | Depletion | Tube | ||||
Mfr: IXFK520N075T2 TTI: IXFK520N075T2 IXYS Availability: 300In StockMOSFETs TRENCHT2 PWR MOSFET 75V 520A | 300In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 75 V | 520 A | 2.2 mOhms | - 20 V, 20 V | 5 V | 545 nC | - 55 C | + 175 C | 1.25 kW | Enhancement | HiPerFET | Tube | |||
300In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 400 mA | 80 Ohms | - 20 V, 20 V | 2 V | 5.8 nC | - 55 C | + 150 C | 25 W | Depletion | Tube | |||||
700In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 1.2 kV | 1.4 A | 15 Ohms | - 30 V, 30 V | 4.5 V | 24.8 nC | - 55 C | + 150 C | 86 W | Enhancement | Tube | |||||
300In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 200 V | 32 A | 130 mOhms | - 15 V, 15 V | 4 V | 185 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | |||||
300In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 8 A | 500 mOhms | - 30 V, 30 V | 3 V | 12 nC | - 55 C | + 150 C | 150 W | Enhancement | HiPerFET | Tube | ||||
100In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 300 V | 72 A | 19 mOhms | - 20 V, 20 V | 2.5 V | 82 nC | - 55 C | + 150 C | 36 W | Enhancement | HiPerFET | Tube | ||||
150In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 55 V | 110 A | 6.6 mOhms | - 20 V, 20 V | 2 V | 57 nC | - 55 C | + 175 C | 180 W | Enhancement | HiPerFET | Tube | ||||
300In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 200 V | 96 A | 24 mOhms | - 20 V, 20 V | 2.5 V | 145 nC | - 55 C | + 175 C | 600 W | Enhancement | Tube | |||||
300In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 500 V | 22 A | 270 mOhms | - 30 V, 30 V | 3 V | 50 nC | - 55 C | + 150 C | 350 W | Enhancement | Tube | |||||
Mfr: IXFP60N25X3 TTI: IXFP60N25X3 IXYS Availability: 250In StockMOSFETs 250V/60A Ultra Junct ion X3-Class MOSFET | 250In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 250 V | 60 A | 19 mOhms | - 20 V, 20 V | 2.5 V | 50 nC | - 55 C | + 150 C | 320 W | Enhancement | HiPerFET | Tube | |||
300In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 24 A | 145 mOhms | - 30 V, 30 V | 3 V | 36 nC | - 55 C | + 150 C | 390 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXTP120N20X4 TTI: IXTP120N20X4 IXYS Availability: 250In StockMOSFETs 200V, 120A, Ultra junction X4, TO-220 package, MOSFET | 250In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 120 A | 9.5 mOhms | - 20 V, 20 V | 2.5 V | 108 nC | - 55 C | + 175 C | 417 W | Enhancement | Tube | ||||
250In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 800 V | 44 A | 190 mOhms | - 30 V, 30 V | 3 V | 198 nC | - 55 C | + 150 C | 1.2 mW | Enhancement | HiPerFET | Tube | ||||
300In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1 kV | 4 A | 3 Ohms | - 20 V, 20 V | 4.5 V | 39 nC | - 55 C | + 150 C | 150 W | Enhancement | HyperFET | Tube | ||||
Mfr: IXFH46N65X2 TTI: IXFH46N65X2 IXYS Availability: 300In StockMOSFETs MOSFET 650V/46A Ultra Junction X2 | 300In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 46 A | 76 mOhms | - 30 V, 30 V | 2.7 V | 75 nC | - 55 C | + 150 C | 660 W | Enhancement | HiPerFET | Tube | |||
300In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1.2 kV | 3 A | 4.5 Ohms | - 20 V, 20 V | 2.5 V | 42 nC | - 55 C | + 150 C | 200 W | Enhancement | Tube | |||||
300In Stock | Si | Through Hole | PLUS-264-3 | N-Channel | 1 Channel | 800 V | 60 A | 140 mOhms | - 30 V, 30 V | 5 V | 250 nC | - 55 C | + 150 C | 1.25 kW | Enhancement | HiPerFET | Tube | ||||
300In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 500 V | 24 A | 270 mOhms | - 30 V, 30 V | 4.5 V | 48 nC | - 55 C | + 150 C | 480 W | Enhancement | Polar2 HiPerFET | Tube | ||||
60In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 80 A | 32 mOhms | - 20 V, 20 V | 2 V | 180 nC | - 55 C | + 150 C | 520 W | Enhancement | Tube | |||||
240In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 200 V | 48 A | 85 mOhms | - 20 V, 20 V | 2 V | 103 nC | - 55 C | + 150 C | 462 W | Enhancement | PolarP | Tube |
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