IXYS - MOSFETs
2,278 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 100 V | 200 A | 7.5 mOhms | - 20 V, 20 V | 5 V | 240 nC | - 55 C | + 175 C | 800 W | Enhancement | PolarHT | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 200 V | 140 A | 18 mOhms | - 20 V, 20 V | 2.5 V | 240 nC | - 55 C | + 175 C | 800 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | P-Channel | 1 Channel | 500 V | 11 A | 750 mOhms | - 20 V, 20 V | 5 V | 130 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.5 kV | 12 A | 2 Ohms | - 30 V, 30 V | 4.5 V | 106 nC | - 55 C | + 150 C | 890 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 60 A | 18 mOhms | - 20 V, 20 V | 2.5 V | 49 nC | - 55 C | + 175 C | 176 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | TO-268-3 | P-Channel | 1 Channel | 100 V | 140 A | 10 mOhms | - 15 V, 15 V | 4 V | 400 nC | - 55 C | + 150 C | 568 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 300 V | 72 A | 19 mOhms | - 20 V, 20 V | 2.5 V | 82 nC | - 55 C | + 150 C | 390 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFK78N50P3 TTI: IXFK78N50P3 IXYS Availability: 0In StockMOSFETs 500V 78A 0.068Ohm PolarP3 Power MOSFET | 0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 500 V | 78 A | 68 mOhms | - 30 V, 30 V | 5 V | 147 nC | - 55 C | + 150 C | 1.13 kW | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-264-3 | P-Channel | 1 Channel | 200 V | 90 A | 44 mOhms | - 20 V, 20 V | 4.5 V | 205 nC | - 55 C | + 150 C | 890 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 65 V | 120 A | 10 mOhms | - 15 V, 15 V | 4 V | 185 nC | - 55 C | + 150 C | 298 W | Enhancement | TrenchP | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 34 A | 96 mOhms | - 30 V, 30 V | 3 V | 54 nC | - 55 C | + 150 C | 540 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 30 A | 200 mOhms | - 30 V, 30 V | 3 V | 70 nC | - 55 C | + 150 C | 460 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 60 A | 40 mOhms | - 20 V, 20 V | 3 V | 73 nC | - 55 C | + 175 C | 500 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 500 V | 6 A | 550 mOhms | - 20 V, 20 V | 4.5 V | 96 nC | - 55 C | + 150 C | 300 W | Depletion | Tube | |||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 500 V | 36 A | 170 mOhms | - 30 V, 30 V | 5 V | 93 nC | - 55 C | + 150 C | 540 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 38 A | 70 mOhms | - 20 V, 20 V | 3.9 V | 250 nC | - 40 C | + 150 C | Enhancement | CoolMOS, ISOPLUS247 | Tube | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 150 V | 36 A | 110 mOhms | - 20 V, 20 V | 2.5 V | 55 nC | - 55 C | + 150 C | 300 W | Enhancement | PolarP | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 250 V | 180 A | 12.9 mOhms | - 20 V, 20 V | 5 V | 345 nC | - 55 C | + 150 C | 1.39 kW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 16 A | 330 mOhms | - 30 V, 30 V | 2.5 V | 43 nC | - 55 C | + 150 C | 300 W | Enhancement | Polar2 HiPerFET | Tube | ||||
Mfr: IXFX120N65X2 TTI: IXFX120N65X2 IXYS Availability: 0In StockMOSFETs MOSFET 650V/120A Ultra Junction X2 | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 120 A | 24 mOhms | - 30 V, 30 V | 2.7 V | 225 nC | - 55 C | + 150 C | 1.25 kW | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | SMD/SMT | TO-263HV-3 | N-Channel | 1 Channel | 1 kV | 3 A | 6 Ohms | - 20 V, 20 V | 4.5 V | 37.5 nC | - 55 C | + 150 C | 125 W | Depletion | Tube | |||||
Mfr: IXFX150N30P3 TTI: IXFX150N30P3 IXYS Availability: 0In StockMOSFETs N-Channel: Power MOSFET w/Fast Diode | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 300 V | 150 A | 19 mOhms | - 20 V, 20 V | 3 V | 197 nC | - 55 C | + 150 C | 1.3 mW | Enhancement | HiPerFET | Tube | |||
Mfr: IXFH22N65X2 TTI: IXFH22N65X2 IXYS Availability: 0In StockMOSFETs MOSFET 650V/22A Ultra Junction X2 | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 22 A | 160 mOhms | - 30 V, 30 V | 2.7 V | 38 nC | - 55 C | + 150 C | 390 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 200 V | 86 A | 13 mOhms | - 20 V, 20 V | 4.5 V | 70 nC | - 55 C | + 175 C | 300 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 16 A | 300 mOhms | - 20 V, 20 V | 4 V | 199 nC | - 55 C | + 150 C | 695 W | Depletion | Tube |
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