IXYS - MOSFETs
2,279 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 300 V | 52 A | 66 mOhms | - 20 V, 20 V | 2.5 V | 110 nC | - 55 C | + 150 C | 400 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 300 V | 69 A | 49 mOhms | - 20 V, 20 V | 5 V | 156 nC | - 55 C | + 150 C | 500 W | Enhancement | PolarHT | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 750 mA | 17 Ohms | - 30 V, 30 V | 4.5 V | 7.8 nC | - 55 C | + 150 C | 40 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 105 V | 80 A | 14 mOhms | - 20 V, 20 V | 5 V | 60 nC | - 55 C | + 175 C | 230 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXTP8N70X2M TTI: IXTP8N70X2M IXYS Availability: 0In StockMOSFETs 700V/4A Ultra Junct X2-Class MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 700 V | 8 A | 500 mOhms | - 30 V, 30 V | 3 V | 12 nC | - 55 C | + 150 C | 150 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 90 A | 12.8 mOhms | - 20 V, 20 V | 2.5 V | 78 nC | - 55 C | + 150 C | 390 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXTY1R4N120PHV TTI: IXTY1R4N120PHV IXYS Availability: 0In StockMOSFETs TO252 1.2KV 1.4A N-CH POLAR | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 1.2 kV | 1.4 A | 13 Ohms | - 30 V, 30 V | 2.5 V | 24.8 nC | - 55 C | + 150 C | 86 W | Enhancement | Polar | Reel | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 32 A | 220 mOhms | - 30 V, 30 V | 3.5 V | 130 nC | - 55 C | + 150 C | 890 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 75 V | 140 A | 11 mOhms | - 20 V, 20 V | 2 V | 275 nC | - 55 C | + 150 C | 540 W | Enhancement | Linear L2 | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 3 kV | 2 A | 21 Ohms | - 20 V, 20 V | 3 V | 73 nC | - 55 C | + 150 C | 520 W | Enhancement | Polar3 | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 3 kV | 4 A | 12.5 Ohms | - 20 V, 20 V | 3 V | 139 nC | - 55 C | + 150 C | 960 W | Enhancement | Polar3 | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 1 kV | 32 A | 220 mOhms | - 30 V, 30 V | 3.5 V | 130 nC | - 55 C | + 150 C | 890 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 72 A | 20 mOhms | - 20 V, 20 V | 2.5 V | 55 nC | - 55 C | + 150 C | 320 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | HiPerFET | Tube | ||||||||||||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 12 A | 500 mOhms | - 30 V, 30 V | - 55 C | + 150 C | 200 W | Enhancement | HiPerFET | Tube | ||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.5 kV | 4 A | 6 Ohms | - 30 V, 30 V | 2.5 V | 44.5 nC | - 55 C | + 150 C | 280 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | PLUS-264-3 | N-Channel | 1 Channel | 500 V | 100 A | 49 mOhms | - 30 V, 30 V | 5 V | 240 nC | - 55 C | + 150 C | 1.25 kW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 10 A | 740 mOhms | - 30 V, 30 V | 3 V | 32 nC | - 55 C | + 150 C | 200 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 14 A | 550 mOhms | - 30 V, 30 V | 3 V | 36 nC | - 55 C | + 150 C | 300 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 26 A | 270 mOhms | - 30 V, 30 V | 2.5 V | 72 nC | - 55 C | + 150 C | 460 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 3 A | 6 Ohms | - 20 V, 20 V | 4.5 V | 37.5 nC | - 55 C | + 150 C | 125 W | Depletion | Tube | |||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 800 V | 1 A | 14 Ohms | Tube | ||||||||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 150 V | 62 A | 40 mOhms | - 20 V, 20 V | 3 V | 70 nC | - 55 C | + 175 C | 350 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 3 A | 4.5 Ohms | - 20 V, 20 V | 4.5 V | 39 nC | - 55 C | + 150 C | 150 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 1 kV | 22 A | 600 mOhms | - 30 V, 30 V | 5 V | 270 nC | - 55 C | + 150 C | 700 W | Enhancement | Tube |