IXYS - MOSFETs
2,278 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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100In Stock | Si | Through Hole | TO-264-3 | P-Channel | 1 Channel | 600 V | 32 A | 350 mOhms | - 20 V, 20 V | 4 V | 196 nC | - 55 C | + 150 C | 890 W | Enhancement | PolarP | Tube | ||||
210In Stock180 On Order Expected 22-Sep-26 | Si | SMD/SMT | D3PAK-3 (TO-268-3) | P-Channel | 1 Channel | 600 V | 10 A | 1 Ohms | - 20 V, 20 V | 5 V | 135 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | |||||
Mfr: IXFH26N50P TTI: IXFH26N50P IXYS Availability: 1,320In Stock4,320 On Order Expected 02-Dec-26 MOSFETs HiPERFET Id26 BVdass500 | 1,320In Stock4,320 On Order Expected 02-Dec-26 | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 26 A | 230 mOhms | - 30 V, 30 V | 3 V | 60 nC | - 55 C | + 150 C | 400 W | Enhancement | HiPerFET | Tube | |||
Mfr: IXTH02N250 TTI: IXTH02N250 IXYS Availability: 150In StockMOSFETs High Voltage Power MOSFET; 2500V, 0.2A | 150In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 2.5 kV | 200 mA | 450 Ohms | - 20 V, 20 V | 2.5 V | 7.4 nC | - 55 C | + 150 C | 83 W | Enhancement | Tube | ||||
Mfr: IXFA80N25X3 TTI: IXFA80N25X3 IXYS Availability: 100In StockMOSFETs 250V/80A Ultra Junct ion X3-Class MOSFET | 100In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 250 V | 80 A | 13 mOhms | - 20 V, 20 V | 2.5 V | 83 nC | - 55 C | + 150 C | 390 W | Enhancement | HiPerFET | Tube | |||
Mfr: IXFH320N10T2 TTI: IXFH320N10T2 IXYS Availability: 300In StockMOSFETs TRENCHT2 HIPERFET PWR MOSFET 100V 320A | 300In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 320 A | 3.5 mOhms | - 20 V, 20 V | 4 V | 430 nC | - 55 C | + 175 C | 1 kW | Enhancement | HiPerFET | Tube | |||
350In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 1 kV | 800 mA | 21 Ohms | - 20 V, 20 V | 2 V | 14.6 nC | - 55 C | + 150 C | 60 W | Depletion | Tube | |||||
150In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 85 V | 96 A | 13 mOhms | - 15 V, 15 V | 2 V | 180 nC | - 55 C | + 150 C | 298 W | Enhancement | Tube | |||||
150In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 6 A | 2.4 Ohms | - 20 V, 20 V | 2.5 V | 56 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | |||||
240In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 180 A | 7.5 mOhms | - 20 V, 20 V | 2.5 V | 154 nC | - 55 C | + 150 C | 735 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXTA1R6N100D2 TTI: IXTA1R6N100D2 IXYS Availability: 150In StockMOSFETs N-CH MOSFETS (D2) 1000V 800MA | 150In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1 kV | 1.6 A | 10 Ohms | - 20 V, 20 V | 4.5 V | 27 nC | - 55 C | + 150 C | 100 W | Depletion | Tube | ||||
Mfr: IXFK64N60P3 TTI: IXFK64N60P3 IXYS Availability: 25In StockMOSFETs 600V 64A 0.095Ohm PolarP3 Power MOSFET | 25In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 600 V | 64 A | 95 mOhms | - 30 V, 30 V | 5 V | 145 nC | - 55 C | + 150 C | 1.13 kW | Enhancement | HiPerFET | Tube | |||
150In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 85 V | 24 A | 65 mOhms | - 15 V, 15 V | 4.5 V | 41 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchP | Tube | ||||
240In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 30 A | 240 mOhms | - 20 V, 20 V | 2.5 V | 335 nC | - 55 C | + 150 C | 540 W | Enhancement | Linear L2 | Tube | ||||
Mfr: IXFH60N65X2 TTI: IXFH60N65X2 IXYS Availability: 180In StockMOSFETs MOSFET 650V/60A Ultra Junction X2 | 180In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 60 A | 52 mOhms | - 30 V, 30 V | 2.7 V | 107 nC | - 55 C | + 150 C | 780 W | Enhancement | HiPerFET | Tube | |||
60In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.7 kV | 2 A | 6.5 Ohms | - 20 V, 20 V | 4.5 V | 110 nC | - 55 C | + 150 C | 568 W | Enhancement | Tube | |||||
150In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 150 V | 180 A | 11 mOhms | - 20 V, 20 V | 5 V | 240 nC | - 55 C | + 175 C | 830 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFH30N50Q3 TTI: IXFH30N50Q3 IXYS Availability: 150In StockMOSFETs Q3Class HiPerFET Pwr MOSFET 500V/30A | 150In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 30 A | 200 mOhms | - 30 V, 30 V | 3.5 V | 62 nC | - 55 C | + 150 C | 690 W | Enhancement | HiPerFET | Tube | |||
250In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 150 V | 44 A | 65 mOhms | - 15 V, 15 V | 4 V | 175 nC | - 55 C | + 150 C | 298 W | Enhancement | Tube | |||||
550In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 85 V | 96 A | 13 mOhms | - 15 V, 15 V | 2 V | 180 nC | - 55 C | + 150 C | 298 W | Enhancement | Tube | |||||
Mfr: IXTH24N65X2 TTI: IXTH24N65X2 IXYS Availability: 1,260In Stock900 On Order Expected MOSFETs TO247 650V 24A N-CH X2CLASS | 1,260In Stock900 On Order Expected | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 24 A | 145 mOhms | - 30 V, 30 V | 3 V | - 55 C | + 150 C | 390 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFH60N50P3 TTI: IXFH60N50P3 IXYS Availability: 300In StockMOSFETs 500V 60A 0.1Ohm PolarP3 Power MOSFET | 300In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 60 A | 100 mOhms | - 30 V, 30 V | 5 V | 96 nC | - 55 C | + 150 C | 1.04 mW | Enhancement | HiPerFET | Tube | |||
270In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 6 A | 2.2 Ohms | - 20 V, 20 V | 2.5 V | 95 nC | - 55 C | + 150 C | 300 W | Depletion | Tube | |||||
250In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 6 A | 550 mOhms | - 20 V, 20 V | 4.5 V | 96 nC | - 55 C | + 150 C | 300 W | Depletion | Tube | |||||
450In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 300 V | 160 A | 19 mOhms | - 20 V, 20 V | 5 V | 335 nC | - 55 C | + 150 C | 1.39 kW | Enhancement | HiPerFET | Tube |
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