IXYS - MOSFETs
2,278 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: IXFX24N100Q3 TTI: IXFX24N100Q3 IXYS Availability: 0In StockMOSFETs Q3Class HiPerFET Pwr MOSFET 1000V/24A | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 24 A | 440 mOhms | - 30 V, 30 V | 3.5 V | 140 nC | - 55 C | + 150 C | 1 kW | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 300 V | 38 A | 50 mOhms | - 20 V, 20 V | 2.5 V | 35 nC | - 55 C | + 150 C | 34 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 40 V | 500 A | 1.6 mOhms | - 20 V, 20 V | 3.5 V | 405 nC | - 55 C | + 175 C | 1 kW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 180 A | 6.4 mOhms | - 20 V, 20 V | 2.5 V | 151 nC | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 200 V | 36 A | 45 mOhms | - 20 V, 20 V | 2.5 V | 21 nC | - 55 C | + 150 C | 170 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 180 A | 6.4 mOhms | - 20 V, 20 V | 2.5 V | 151 nC | - 55 C | + 175 C | 480 W | Enhancement | Trench | Reel | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 200 V | 26 A | 170 mOhms | - 20 V, 20 V | 2.5 V | 56 nC | - 55 C | + 175 C | 300 W | Enhancement | PolarP | Reel | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 100 V | 52 A | 50 mOhms | - 20 V, 20 V | 2 V | 60 nC | - 55 C | + 150 C | 300 W | Enhancement | PolarP | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 300 V | 38 A | 50 mOhms | - 20 V, 20 V | 4.5 V | 35 nC | - 55 C | + 150 C | 240 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFT100N30X3HV TTI: IXFT100N30X3HV IXYS Availability: 0In StockMOSFETs TO268 300V 100A N-CH X3CLASS | 0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 300 V | 100 A | 13.5 mOhms | - 20 V, 20 V | 4.5 V | 122 nC | - 55 C | + 150 C | 480 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 48 A | 50 mOhms | - 30 V, 30 V | - 55 C | + 175 C | 250 W | Enhancement | HiPerFET | Tube | ||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 75 V | 230 A | 4.2 mOhms | - 20 V, 20 V | 2 V | 178 nC | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.5 kV | 20 A | 1 Ohms | - 30 V, 30 V | 4.5 V | 215 nC | - 55 C | + 150 C | 1.25 kW | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1.2 kV | 600 mA | 30 Ohms | - 20 V, 20 V | 2 V | 13.3 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 300 V | 36 A | 110 mOhms | - 30 V, 30 V | 3 V | 70 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | SMD-24 | N-Channel | 6 Channel | 150 V | 50 A | 24 mOhms | - 20 V, 20 V | 2.5 V | 97 nC | - 55 C | + 175 C | Enhancement | ISOPLUS-DIL | Tube | |||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 500 V | 30 A | 215 mOhms | - 20 V, 20 V | 2.5 V | 240 nC | - 55 C | + 150 C | 400 W | Enhancement | Tube | |||||
Mfr: IXFX98N50P3 TTI: IXFX98N50P3 IXYS Availability: 0In StockMOSFETs 500V 98A 0.05Ohm PolarP3 Power MOSFET | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 98 A | 50 mOhms | - 30 V, 30 V | 5 V | 197 nC | - 55 C | + 150 C | 1.3 kW | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 300 V | 102 A | 33 mOhms | - 20 V, 20 V | 5 V | 224 nC | - 55 C | + 150 C | 700 W | Enhancement | PolarHT | Tube | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 500 V | 36 A | 170 mOhms | - 30 V, 30 V | 5 V | 85 nC | - 55 C | + 150 C | 540 W | Enhancement | PolarHV | Tube | ||||
Not Available Online | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 15 A | 190 mOhms | - 20 V, 20 V | 3.9 V | 87 nC | - 55 C | + 150 C | 125 W | Enhancement | CoolMOS | Box | ||||
0In Stock | Si | Through Hole | ISOPLUS-i4-PAK-5 | N-Channel | 1 Channel | 75 V | 120 A | 5.8 mOhms | - 30 V, 30 V | 2 V | 178 nC | - 55 C | + 175 C | 170 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 16 A | 360 mOhms | - 30 V, 30 V | 3 V | 29 nC | - 55 C | + 150 C | 330 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFH160N15T2 TTI: IXFH160N15T2 IXYS Availability: 0In StockMOSFETs Trench T2 HiperFET Power MOSFET | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 150 V | 160 A | 9 mOhms | - 20 V, 20 V | 4.5 V | 253 nC | - 55 C | + 175 C | 880 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 16 A | 360 mOhms | - 30 V, 30 V | 3 V | 29 nC | - 55 C | + 150 C | 330 W | Enhancement | HiPerFET | Tube |