IXYS - MOSFETs
2,279 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 500 V | 36 A | 170 mOhms | 30 V | 5 V | 85 nC | - 55 C | + 150 C | 540 W | Enhancement | PolarHV | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 3.5 A | 3 Ohms | 30 V | 3 V | 14.2 nC | - 55 C | + 150 C | 100 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1 kV | 1.2 A | 13 Ohms | 20 V | 2.5 V | 15.5 nC | - 55 C | + 150 C | 50 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 100 V | 50 A | 55 mOhms | 20 V | 5 V | 140 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 300 V | 88 A | 40 mOhms | 20 V | 5 V | 180 nC | - 55 C | + 150 C | 600 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 16 A | 400 mOhms | 30 V | 3 V | 36 nC | - 55 C | + 150 C | 300 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 15 A | 760 mOhms | 30 V | 6.5 V | 97 nC | - 55 C | + 150 C | 543 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 1 kV | 32 A | 320 mOhms | 30 V | 6.5 V | 225 nC | - 55 C | + 150 C | 960 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 40 V | 100 A | 7 mOhms | 20 V | 2 V | 25.5 nC | - 55 C | + 175 C | 150 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 75 V | 70 A | 12 mOhms | 20 V | 2 V | 46 nC | - 55 C | + 175 C | 150 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 1.2 kV | 200 mA | 75 Ohms | 20 V | - 55 C | + 150 C | 33 W | Tube | ||||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 12 A | 310 mOhms | 30 V | 3 V | 18.5 nC | - 55 C | + 150 C | 180 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 90 A | 12.8 mOhms | 20 V | 2.5 V | 78 nC | - 55 C | + 150 C | 390 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 300 V | 210 A | 5.5 mOhms | 20 V | 2.5 V | 375 nC | - 55 C | + 150 C | 1.25 kW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 700 V | 12 A | 300 mOhms | 30 V | 2.5 V | - 55 C | + 150 C | 180 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | ISOPLUS-i5-PAK-3 | N-Channel | 1 Channel | 4.7 kV | 2 A | 20 Ohms | 20 V | 3.5 V | 180 nC | - 55 C | + 150 C | 220 W | Enhancement | ISOPLUS i5-PAC | Tube | ||||
0In Stock | Si | Through Hole | TO-3P | N-Channel | 200 V | 130 A | 16 mOhms | 20 V | 2.5 V | - 55 C | + 175 C | 830 W | HiPerFET | Tube | |||||||
Mfr: IXTX1R4N450HV TTI: IXTX1R4N450HV IXYS Availability: 0In StockMOSFETs PLUS247 4.5KV 1.4A N-CH HIVOLT | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 4.5 kV | 1.4 A | 40 Ohms | 20 V | 6 V | 88 nC | - 55 C | + 150 C | 960 W | Enhancement | Tube | ||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 200 V | 72 A | 20 mOhms | 20 V | 2.5 V | 55 nC | - 55 C | + 150 C | 320 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXTH1N200P3 TTI: IXTH1N200P3 IXYS Availability: Not Available OnlineMOSFETs 2000V/1A HV Power MOSFET, TO-247 | Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 2 kV | 1 A | 40 Ohms | 20 V | 2 V | 23.5 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 200 V | 68 A | 55 mOhms | 15 V | 4 V | 380 nC | - 55 C | + 150 C | 568 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.5 kV | 2.5 A | 6 Ohms | 30 V | 5 V | 44.5 nC | - 55 C | + 150 C | 110 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 30 A | 240 mOhms | 30 V | 2.5 V | 82 nC | - 55 C | + 150 C | 500 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 16 A | 600 mOhms | 30 V | 5 V | 71 nC | - 55 C | + 150 C | 460 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 250 V | 82 A | 35 mOhms | 20 V | 5 V | 142 nC | - 55 C | + 150 C | 500 W | Enhancement | PolarHT | Tube |