IXYS - MOSFETs
2,279 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
180In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | P-Channel | 1 Channel | 600 V | 10 A | 1 Ohms | 20 V | 5 V | 135 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | |||||
Mfr: IXFK140N30P TTI: IXFK140N30P IXYS Availability: 100In Stock400 On Order Expected 20-Jan-27 MOSFETs 140 Amps 300V 0.024 Ohms Rds | 100In Stock400 On Order Expected 20-Jan-27 | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 300 V | 140 A | 24 mOhms | 20 V | 3 V | 185 nC | - 55 C | + 150 C | 1.04 kW | Enhancement | HiPerFET | Tube | |||
Mfr: IXTA120P065T TTI: IXTA120P065T IXYS Availability: 100In Stock600 On Order Expected 30-Sep-26 MOSFETs -120 Amps -65V 0.01 Rds | 100In Stock600 On Order Expected 30-Sep-26 | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 65 V | 120 A | 10 mOhms | 15 V | 2 V | 185 nC | - 55 C | + 150 C | 298 W | Enhancement | TrenchP | Tube | |||
60In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 230 A | 7.5 mOhms | 20 V | 3 V | 358 nC | - 55 C | + 175 C | 1.67 kW | Enhancement | HiPerFET | Tube | ||||
Mfr: IXTT88N30P TTI: IXTT88N30P IXYS Availability: 300In Stock270 On Order Expected 30-Sep-26 MOSFETs 88 Amps 300V 0.04 Rds | 300In Stock270 On Order Expected 30-Sep-26 | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 300 V | 88 A | 40 mOhms | 20 V | 5 V | 180 nC | - 55 C | + 150 C | 600 W | Enhancement | PolarHT | Tube | |||
Mfr: IXTP76P10T TTI: IXTP76P10T IXYS Availability: 150In Stock200 On Order Expected 14-Dec-26 MOSFETs TO220 100V 76A P-CH TRENCH | 150In Stock200 On Order Expected 14-Dec-26 | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 100 V | 76 A | 24 mOhms | 15 V | 2 V | 197 nC | - 55 C | + 150 C | 298 W | Enhancement | Tube | ||||
450In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 75 V | 80 A | 24 mOhms | 20 V | 2.5 V | 103 nC | - 55 C | + 150 C | 357 W | Enhancement | Tube | |||||
Mfr: IXTY01N100D TTI: IXTY01N100D IXYS Availability: 700In Stock420 On Order Expected 09-Jun-27 MOSFETs MOSFET N-CH DEPLETN 1000V 100MA TO-25 | 700In Stock420 On Order Expected 09-Jun-27 | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 1 kV | 100 mA | 80 Ohms | 20 V | 4.5 V | 5.8 nC | - 55 C | + 150 C | 1.1 W | Depletion | Tube | ||||
300In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 150 V | 44 A | 65 mOhms | 15 V | - 55 C | + 150 C | 298 W | Enhancement | Tube | |||||||
Mfr: IXFH26N50P TTI: IXFH26N50P IXYS Availability: 5,670In Stock900 On Order Expected 02-Feb-27 MOSFETs HiPERFET Id26 BVdass500 | 5,670In Stock900 On Order Expected 02-Feb-27 | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 26 A | 230 mOhms | 30 V | 3 V | 60 nC | - 55 C | + 150 C | 400 W | Enhancement | HiPerFET | Tube | |||
270In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 150 V | 120 A | 16 mOhms | 20 V | 3 V | 150 nC | - 55 C | + 175 C | 600 W | Enhancement | HiPerFET | Tube | ||||
250In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 12 A | 300 mOhms | 30 V | 2.5 V | 17.7 nC | - 55 C | + 150 C | 180 W | Enhancement | HiPerFET | Tube | ||||
60In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 65 V | 120 A | 10 mOhms | 15 V | 4 V | 58 nC | - 55 C | + 150 C | 298 W | Enhancement | TrenchP | Tube | ||||
100In Stock | Si | Through Hole | TO-264-3 | P-Channel | 1 Channel | 600 V | 32 A | 350 mOhms | 20 V | 4 V | 196 nC | - 55 C | + 150 C | 890 W | Enhancement | PolarP | Tube | ||||
Mfr: IXTH02N250 TTI: IXTH02N250 IXYS Availability: 150In StockMOSFETs High Voltage Power MOSFET; 2500V, 0.2A | 150In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 2.5 kV | 200 mA | 450 Ohms | 20 V | 2.5 V | 7.4 nC | - 55 C | + 150 C | 83 W | Enhancement | Tube | ||||
120In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 500 V | 40 A | 230 mOhms | 20 V | 4 V | 205 nC | - 55 C | + 150 C | 890 W | Enhancement | PolarP | Tube | ||||
240In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 10 A | 1.1 Ohms | 30 V | 5.5 V | 40 nC | - 55 C | + 150 C | 300 W | Enhancement | HiPerFET | Tube | ||||
210In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 300 V | 88 A | 40 mOhms | 20 V | 2.5 V | 180 nC | - 55 C | + 150 C | 600 W | Enhancement | Tube | |||||
Mfr: IXFX64N50P TTI: IXFX64N50P IXYS Availability: 90In Stock60 On Order Expected 14-Jan-27 MOSFETs 64.0 Amps 500 V 0.09 Ohm Rds | 90In Stock60 On Order Expected 14-Jan-27 | Si | Through Hole | TO-247-PLUS-3 | N-Channel | 1 Channel | 500 V | 64 A | 85 mOhms | 30 V | 3 V | 150 nC | - 55 C | + 150 C | 830 W | Enhancement | HiPerFET | Tube | |||
300In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 1.2 kV | 12 A | 2 Ohms | 30 V | 4.5 V | 106 nC | - 55 C | + 150 C | 890 W | Enhancement | Tube | |||||
60In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 6 A | 3.5 Ohms | 20 V | 5 V | 67 nC | - 55 C | + 150 C | 540 W | Enhancement | Tube | |||||
300In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 16 A | 80 mOhms | 20 V | 4.5 V | 208 nC | - 55 C | + 150 C | 695 W | Depletion | Tube | |||||
60In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 500 V | 16 A | 300 mOhms | 20 V | 2 V | 199 nC | - 55 C | + 150 C | 695 W | Depletion | Tube | |||||
90In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.5 kV | 3 A | 7.3 Ohms | 30 V | 2.5 V | 38.6 nC | - 55 C | + 150 C | 250 W | Enhancement | Tube | |||||
400In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 3 kV | 1 A | 50 Ohms | 20 V | 2 V | 30.6 nC | - 55 C | + 150 C | 195 W | Enhancement | Tube |