Littelfuse - MOSFETs
2,385 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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Mfr: IXFA26N50P3 TTI: IXFA26N50P3 IXYS Availability: 0In StockMOSFETs N-Channel: Power MOSFET w/Fast Diode | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 500 V | 26 A | 240 mOhms | HiPerFET | Tube | ||||||||||
Mfr: IXFA8N85XHV TTI: IXFA8N85XHV IXYS Availability: 0In StockMOSFETs 850V/8A U-Junc X-Cla ss Power MOSFET | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 850 V | 8 A | 850 mOhms | - 30 V, 30 V | 3 V | 17 nC | - 55 C | + 150 C | 200 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 44 A | 130 mOhms | - 20 V, 20 V | 4.5 V | 330 nC | - 55 C | + 150 C | 560 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFR24N90P TTI: IXFR24N90P IXYS Availability: 0In StockMOSFETs PolarHV HiPerFETs 500V-1.2Kv Red Rds | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 900 V | 13 A | 460 mOhms | - 30 V, 30 V | 58 nC | - 55 C | + 150 C | 230 W | HiPerFET | Tube | ||||||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 200 V | 53 A | 48 mOhms | - 20 V, 20 V | 4 V | 205 nC | - 55 C | + 150 C | 312 W | Enhancement | PolarP | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 100 V | 26 A | 90 mOhms | - 15 V, 15 V | 4.5 V | 52 nC | - 55 C | + 150 C | 150 W | Enhancement | Tube | |||||
0In Stock | Si | Tube | |||||||||||||||||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 40 V | 300 A | 2.5 mOhms | - 20 V, 20 V | 2 V | 145 nC | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 26 A | 130 mOhms | - 30 V, 30 V | 5 V | 45 nC | - 55 C | + 150 C | 460 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 1 kV | 1.4 A | 11.8 Ohms | - 20 V, 20 V | 2.5 V | 17.8 nC | - 55 C | + 150 C | 63 W | Enhancement | Polar | Reel | ||||
0In Stock | Si | Tube | |||||||||||||||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 200 A | 7.5 mOhms | - 20 V, 20 V | 2.5 V | 235 nC | - 55 C | + 175 C | 830 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 600 V | 36 A | 190 mOhms | - 30 V, 30 V | 3 V | 102 nC | - 55 C | + 150 C | 650 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 600 V | 48 A | 135 mOhms | - 30 V, 30 V | - 55 C | + 150 C | 830 W | Enhancement | HiPerFET | Tube | ||||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 800 V | 24 A | 400 mOhms | - 30 V, 30 V | 100 nC | - 55 C | + 150 C | 650 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 150 V | 120 A | 16 mOhms | - 20 V, 20 V | 5 V | 150 nC | - 55 C | + 175 C | 600 W | Enhancement | PolarHT | Tube | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 200 V | 74 A | 34 mOhms | - 20 V, 20 V | 5 V | 107 nC | - 55 C | + 175 C | 480 W | Enhancement | PolarHT | Tube | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 200 V | 96 A | 24 mOhms | - 20 V, 20 V | 5 V | 145 nC | - 55 C | + 175 C | 600 W | Enhancement | PolarHT | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1.2 kV | 1.4 A | 13 Ohms | - 20 V, 20 V | 2.5 V | 24.8 nC | - 55 C | + 150 C | 86 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | 150 V | 56 A | 36 mOhms | HiPerFET | Tube | |||||||||||||
0In Stock | Si | Through Hole | ISOPLUS-i4-PAK-5 | N-Channel | 1 Channel | 100 V | 120 A | 6.3 mOhms | - 55 C | + 175 C | 200 W | Enhancement | HiPerFET | Tube | |||||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 75 V | 170 A | 5.4 mOhms | - 20 V, 20 V | 2 V | 109 nC | - 55 C | + 175 C | 360 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 300 V | 102 A | 33 mOhms | - 20 V, 20 V | 5 V | 224 nC | - 55 C | + 150 C | 700 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 200 V | 120 A | 22 mOhms | - 20 V, 20 V | 5 V | 152 nC | - 55 C | + 175 C | 714 W | Enhancement | PolarHT | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 800 V | 27 A | 320 mOhms | - 20 V, 20 V | 4.5 V | 170 nC | - 55 C | + 150 C | 500 W | Enhancement | HiPerFET | Tube |
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