Littelfuse - MOSFETs
2,385 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 34 A | 240 mOhms | - 20 V, 20 V | - 55 C | + 150 C | 560 W | Enhancement | HyperFET | Tube | ||||||
0In Stock | Si | Through Hole | ISOPLUS-i4-PAK-3 | BIMOSFET | Tube | ||||||||||||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 25 A | 200 mOhms | - 30 V, 30 V | 5 V | 200 nC | - 55 C | + 150 C | 300 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 7 A | 1.44 Ohms | - 30 V, 30 V | 5 V | 32 nC | - 55 C | + 150 C | 200 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 800 V | 32 A | 270 mOhms | - 30 V, 30 V | 5 V | 150 nC | - 55 C | + 150 C | 830 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 120 A | 8 mOhms | - 20 V, 20 V | 5 V | 235 nC | - 55 C | + 175 C | 300 W | Enhancement | Polar | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 250 V | 42 A | 84 mOhms | - 20 V, 20 V | 5.5 V | 70 nC | - 55 C | + 150 C | 300 W | Enhancement | PolarHT | Tube | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 300 V | 52 A | 66 mOhms | - 20 V, 20 V | - 55 C | + 150 C | 400 W | Enhancement | Tube | |||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 13 A | 630 mOhms | - 30 V, 30 V | - 55 C | + 150 C | 290 W | Enhancement | HiPerFET | Tube | ||||||
0In Stock | Si | Through Hole | TO-247-PLUS-3 | N-Channel | 1 Channel | 1.2 kV | 26 A | 500 mOhms | - 30 V, 30 V | 6.5 V | 255 nC | - 55 C | + 150 C | 960 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 27 A | 320 mOhms | - 20 V, 20 V | 4.5 V | 170 nC | - 55 C | + 150 C | 500 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 600 V | 18 A | 420 mOhms | - 30 V, 30 V | - 55 C | + 150 C | 360 W | Enhancement | Tube | |||||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 600 V | 26 A | 270 mOhms | - 30 V, 30 V | - 55 C | + 150 C | 460 W | Enhancement | Tube | |||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 3 A | 4.8 Ohms | - 20 V, 20 V | - 55 C | + 150 C | 125 W | Enhancement | Tube | |||||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 200 V | 48 A | 50 mOhms | - 30 V, 30 V | 4.5 V | 60 nC | - 55 C | + 175 C | 250 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFR32N80Q3 TTI: IXFR32N80Q3 IXYS Availability: 0In StockMOSFETs Q3Class HiPerFET Pwr MOSFET 800V/24A | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 24 A | 300 mOhms | - 30 V, 30 V | 6 V | 140 nC | - 55 C | + 150 C | 500 W | Enhancement | HiPerFET | Tube | |||
Mfr: IXFX32N90P TTI: IXFX32N90P IXYS Availability: 0In StockMOSFETs Polar HiPerFETs MOSFET w/Fast Diode | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 900 V | 32 A | 300 mOhms | - 30 V, 30 V | 6.5 V | 215 nC | - 55 C | + 150 C | 960 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 300 V | 25 A | 49 mOhms | - 20 V, 20 V | 2.5 V | 156 nC | - 55 C | + 150 C | 90 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 850 V | 14 A | 550 mOhms | - 30 V, 30 V | 3.5 V | 30 nC | - 55 C | + 150 C | 460 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 18 A | 200 mOhms | - 30 V, 30 V | 3 V | 29 nC | - 55 C | + 150 C | 290 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 200 V | 50 A | 30 mOhms | - 20 V, 20 V | 2.5 V | 33 nC | - 55 C | + 150 C | 240 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 90 A | 12.8 mOhms | - 20 V, 20 V | 2.5 V | 78 nC | - 55 C | + 150 C | 36 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 120 V | 140 A | 10 mOhms | - 20 V, 20 V | 2.5 V | 174 nC | - 55 C | + 175 C | 577 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 120 A | 23 mOhms | - 30 V, 30 V | 3 V | 230 nC | - 55 C | + 150 C | 1.25 mW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Tube |
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