Littelfuse - MOSFETs
2,379 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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Mfr: IXFA130N15X3TRL TTI: IXFA130N15X3TRL IXYS Availability: Not Available OnlineMOSFETs TO263 150V 130A N-CH X3CLASS | Not Available Online | Si | Reel | ||||||||||||||||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | HiPerFET | Tube | ||||||||||||||||
Mfr: IXFT32N100XHV TTI: IXFT32N100XHV IXYS Availability: 0In StockMOSFETs 1000V 32A TO-268HV Power MOSFET | 0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 1 kV | 32 A | 220 mOhms | 30 V | 3.5 V | 130 nC | - 55 C | + 150 C | 890 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 250 A | 6.5 mOhms | 20 V | 3 V | 205 nC | - 55 C | + 175 C | 1.25 mW | Enhancement | HiPerFET | Tube | ||||
Mfr: IXTX600N04T2 TTI: IXTX600N04T2 IXYS Availability: 0In StockMOSFETs GigaMOS Trench T2 HiperFET PWR MOSFET | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 40 V | 600 A | 1.5 mOhms | 20 V | 1.5 V | 590 nC | - 55 C | + 175 C | 1.25 mW | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 250 V | 86 A | 37 mOhms | 20 V | 3 V | - 55 C | + 150 C | 540 W | HiPerFET | Tube | |||||||
Mfr: IXFK140N25T TTI: IXFK140N25T IXYS Availability: 0In StockMOSFETs TRENCH HIPERFET PWR MOSFET 250V 140A | 0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 250 V | 140 A | 17 mOhms | 20 V | 5 V | 255 nC | - 55 C | + 150 C | 960 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 250 V | 44 A | 75 mOhms | 20 V | 2.5 V | - 55 C | + 150 C | 400 W | Linear L2T | Tube | |||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 2 kV | 6 A | 4 Ohms | 20 V | 3 V | 143 nC | - 55 C | + 150 C | 960 W | Enhancement | Polar3 | Tube | ||||
0In Stock | Si | Tube | |||||||||||||||||||
0In Stock | Si | Through Hole | PLUS-264-3 | N-Channel | 1 Channel | 1 kV | 70 A | 89 mOhms | 30 V | 3.5 V | 350 nC | - 55 C | + 150 C | 1.785 mW | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFX66N85X TTI: IXFX66N85X IXYS Availability: 0In StockMOSFETs 850V Ultra Junction X-Class Pwr MOSFET | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 850 V | 66 A | 65 mOhms | 30 V | 3.5 V | 230 nC | - 55 C | + 150 C | 1.25 kW | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 72 A | 20 mOhms | 20 V | 2.5 V | 55 nC | - 55 C | + 150 C | 36 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | HiPerFET | Tube | ||||||||||||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 20 A | 200 mOhms | 30 V | 3 V | 102 nC | - 55 C | + 150 C | 208 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 800 V | 16 A | 600 mOhms | 30 V | - 55 C | + 150 C | 460 W | Enhancement | HiPerFET | Tube | ||||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 150 V | 96 A | 24 mOhms | 20 V | 5 V | 110 nC | - 55 C | + 175 C | 480 W | Enhancement | PolarHT | Tube | ||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 250 V | 42 A | 84 mOhms | 20 V | 5.5 V | 70 nC | - 55 C | + 150 C | 300 W | Enhancement | PolarHT | Tube | ||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 500 V | 16 A | 400 mOhms | 30 V | 3 V | 43 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 500 V | 44 A | 140 mOhms | 30 V | 5 V | 98 nC | - 55 C | + 150 C | 650 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 14 A | 450 mOhms | 30 V | 5.5 V | 36 nC | - 55 C | + 150 C | 300 W | Enhancement | PolarHV | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 133 A | 9 mOhms | 20 V | 5 V | 235 nC | - 55 C | + 175 C | 300 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 32 A | 270 mOhms | 30 V | - 55 C | + 150 C | 830 W | Enhancement | HiPerFET | Tube | ||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 15 A | 500 mOhms | 30 V | 6.5 V | 225 nC | - 55 C | + 150 C | 320 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 1.2 kV | 16 A | 950 mOhms | 30 V | 6.5 V | 120 nC | - 55 C | + 150 C | 660 W | Enhancement | HiPerFET | Tube |
