Littelfuse - MOSFETs
2,385 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 300 V | 69 A | 49 mOhms | - 20 V, 20 V | - 55 C | + 150 C | 500 W | Enhancement | HiPerFET | Tube | ||||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 150 V | 76 A | 22 mOhms | - 20 V, 20 V | 2.5 V | 97 nC | - 55 C | + 175 C | 350 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFX100N65X2 TTI: IXFX100N65X2 IXYS Availability: 0In StockMOSFETs MOSFET 650V/100A Ultra Junction X2 | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 100 A | 30 mOhms | - 30 V, 30 V | 2.7 V | 180 nC | - 55 C | + 150 C | 1.04 kW | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Tube | |||||||||||||||||||
0In Stock | Si | Through Hole | TO-3P-3 | P-Channel | 1 Channel | 200 V | 32 A | 130 mOhms | - 15 V, 15 V | 2 V | 185 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 800 V | 40 A | 150 mOhms | - 30 V, 30 V | 5 V | 250 nC | - 55 C | + 150 C | 625 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 24 A | 300 mOhms | - 30 V, 30 V | 5 V | 160 nC | - 55 C | + 150 C | 400 W | Enhancement | Tube | |||||
Not Available Online | Si | Through Hole | ISOPLUS-264-5 | N-Channel | 2 Channel | 600 V | 47 A | 45 mOhms | - 20 V, 20 V | 2.5 V | 190 nC | - 55 C | + 150 C | 480 W | Enhancement | CoolMOS | Tube | ||||
0In Stock | Si | Through Hole | PLUS-264-3 | N-Channel | 1 Channel | 200 V | 210 A | 10.5 mOhms | - 20 V, 20 V | - 55 C | + 175 C | 1.5 kW | HiPerFET | Tube | |||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 900 V | 40 A | 210 mOhms | - 30 V, 30 V | 6.5 V | 230 nC | - 55 C | + 150 C | 960 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 75 V | 120 A | 7.7 mOhms | - 20 V, 20 V | 2 V | 78 nC | - 55 C | + 175 C | 250 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 55 V | 200 A | 3.3 mOhms | - 20 V, 20 V | 4 V | 109 nC | - 55 C | + 175 C | 360 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFK120N30P3 TTI: IXFK120N30P3 IXYS Availability: 0In StockMOSFETs N-Channel: Power MOSFET w/Fast Diode | 0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 300 V | 120 A | 27 mOhms | - 20 V, 20 V | 3 V | 150 nC | - 55 C | + 150 C | 1.13 mW | Enhancement | HiPerFET | Tube | |||
Mfr: IXTU8N70X2 TTI: IXTU8N70X2 IXYS Availability: 0In StockMOSFETs 700V/8A Ultra Junct X2-Class MOSFET | 0In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 700 V | 8 A | 500 mOhms | - 30 V, 30 V | 2.5 V | 12 nC | - 55 C | + 150 C | 150 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 850 V | 30 A | 220 mOhms | - 30 V, 30 V | 3.5 V | 68 nC | - 55 C | + 150 C | 695 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 100 V | 52 A | 50 mOhms | - 20 V, 20 V | 2 V | 60 nC | - 55 C | + 150 C | 300 W | Enhancement | PolarP | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 34 A | 100 mOhms | - 20 V, 20 V | 5.2 V | 29 nC | - 55 C | + 150 C | 446 W | Enhancement | Tube | |||||
0In Stock | Si | Tube | |||||||||||||||||||
0In Stock | Si | SMD/SMT | TO-263-7 | N-Channel | 1 Channel | 55 V | 200 A | 4.2 mOhms | - 20 V, 20 V | 2 V | 109 nC | - 55 C | + 175 C | 360 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 15 A | 430 mOhms | - 30 V, 30 V | 6.5 V | 197 nC | - 55 C | + 150 C | 290 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 500 V | 63 A | 43 mOhms | - 30 V, 30 V | 3 V | 267 nC | - 55 C | + 150 C | 520 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 250 V | 30 A | 140 mOhms | - 20 V, 20 V | 2.5 V | 130 nC | - 55 C | + 150 C | 355 W | Enhancement | Linear L2 | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 200 V | 170 A | HiPerFET | Tube | |||||||||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 6 A | 500 mOhms | - 30 V, 30 V | - 55 C | + 150 C | 50 W | Enhancement | Tube | |||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 9 A | 1.04 Ohms | - 30 V, 30 V | - 55 C | + 150 C | 230 W | Enhancement | HiPerFET | Tube |
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