Littelfuse - MOSFETs
2,385 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | SMD/SMT | SOT-89-3 | N-Channel | 1 Channel | 60 V | 600 mA | 1 Ohms | - 15 V, 15 V | 3.1 V | - 55 C | + 150 C | 1.1 W | Depletion | Clare | Reel | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 20 A | 300 mOhms | - 30 V, 30 V | 3 V | 36 nC | - 55 C | + 150 C | 380 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 30 A | 240 mOhms | - 30 V, 30 V | 5 V | 82 nC | - 55 C | + 150 C | 540 W | Enhancement | PolarHV | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 200 V | 24 A | 150 mOhms | - 20 V, 20 V | 5 V | 150 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 150 V | 180 A | 10 mOhms | - 20 V, 20 V | 5 V | 240 nC | - 55 C | + 175 C | 800 W | Enhancement | PolarHT | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 500 V | 11 A | 750 mOhms | - 20 V, 20 V | 5 V | 130 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 36 A | 170 mOhms | - 30 V, 30 V | 3 V | 93 nC | - 55 C | + 150 C | 540 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 300 V | 36 A | 110 mOhms | - 30 V, 30 V | 3 V | 70 nC | - 55 C | + 150 C | 300 W | Enhancement | PolarHT | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 62 A | 50 mOhms | - 30 V, 30 V | 2.7 V | 100 nC | - 55 C | + 150 C | 780 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 100 V | 52 A | 50 mOhms | - 20 V, 20 V | 4 V | 60 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 300 V | 72 A | 19 mOhms | - 30 V, 30 V | 2.5 V | 82 nC | - 55 C | + 150 C | 390 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 22 A | 270 mOhms | - 30 V, 30 V | 5.5 V | 55 nC | - 55 C | + 150 C | 350 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 500 V | 800 mA | 4.6 Ohms | - 20 V, 20 V | 4.5 V | 12.7 nC | - 55 C | + 150 C | 60 W | Depletion | Tube | |||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 100 V | 200 A | 7.5 mOhms | - 20 V, 20 V | 5 V | 240 nC | - 55 C | + 175 C | 800 W | Enhancement | PolarHT | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 6 A | 2.2 Ohms | - 20 V, 20 V | 2.5 V | 95 nC | - 55 C | + 150 C | 300 W | Depletion | Tube | |||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 50 V | 48 A | 30 mOhms | - 15 V, 15 V | 4.5 V | 53 nC | - 55 C | + 150 C | 150 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 300 V | 38 A | 50 mOhms | - 20 V, 20 V | 2.5 V | 35 nC | - 55 C | + 150 C | 240 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | TO-263HV-3 | N-Channel | 1 Channel | 1.5 kV | 3 A | 7.3 Ohms | - 30 V, 30 V | 2.5 V | 38.6 nC | - 55 C | + 150 C | 250 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 94 A | 10.6 mOhms | - 20 V, 20 V | 4.5 V | 77 nC | - 55 C | + 175 C | 360 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 250 V | 180 A | 12.9 mOhms | - 20 V, 20 V | 5 V | 345 nC | - 55 C | + 150 C | 1.39 kW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | TO-268-3 | P-Channel | 1 Channel | 100 V | 140 A | 10 mOhms | - 15 V, 15 V | 4 V | 400 nC | - 55 C | + 150 C | 568 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | TO-263HV-3 | N-Channel | 1 Channel | 1 kV | 3 A | 6 Ohms | - 20 V, 20 V | 4.5 V | 37.5 nC | - 55 C | + 150 C | 125 W | Depletion | Tube | |||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 200 V | 140 A | 18 mOhms | - 20 V, 20 V | 2.5 V | 240 nC | - 55 C | + 175 C | 800 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 150 V | 36 A | 110 mOhms | - 20 V, 20 V | 2.5 V | 55 nC | - 55 C | + 150 C | 300 W | Enhancement | PolarP | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 30 A | 200 mOhms | - 30 V, 30 V | 3 V | 70 nC | - 55 C | + 150 C | 460 W | Enhancement | HiPerFET | Tube |
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- + $7.00 Per Reel