Littelfuse - MOSFETs
2,385 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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500In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 500 V | 10 A | 1 Ohms | - 20 V, 20 V | 2 V | 50 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | |||||
Mfr: IXFA6N120P TTI: IXFA6N120P IXYS Availability: 150In StockMOSFETs POLAR HIPERFET WITH REDUCED RDS 1200V 6A | 150In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1.2 kV | 6 A | 2.75 Ohms | - 30 V, 30 V | 5 V | 92 nC | - 55 C | + 150 C | 250 W | Enhancement | HiPerFET | Tube | |||
250In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 12 A | 300 mOhms | - 30 V, 30 V | 2.5 V | 17.7 nC | - 55 C | + 150 C | 180 W | Enhancement | HiPerFET | Tube | ||||
120In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 65 V | 120 A | 10 mOhms | - 15 V, 15 V | 4 V | 58 nC | - 55 C | + 150 C | 298 W | Enhancement | TrenchP | Tube | ||||
Mfr: IXFA80N25X3 TTI: IXFA80N25X3 IXYS Availability: 100In StockMOSFETs 250V/80A Ultra Junct ion X3-Class MOSFET | 100In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 250 V | 80 A | 13 mOhms | - 20 V, 20 V | 2.5 V | 83 nC | - 55 C | + 150 C | 390 W | Enhancement | HiPerFET | Tube | |||
Mfr: IXTH02N250 TTI: IXTH02N250 IXYS Availability: 150In StockMOSFETs High Voltage Power MOSFET; 2500V, 0.2A | 150In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 2.5 kV | 200 mA | 450 Ohms | - 20 V, 20 V | 2.5 V | 7.4 nC | - 55 C | + 150 C | 83 W | Enhancement | Tube | ||||
210In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 300 V | 88 A | 40 mOhms | - 20 V, 20 V | 2.5 V | 180 nC | - 55 C | + 150 C | 600 W | Enhancement | Tube | |||||
60In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 6 A | 3.5 Ohms | - 20 V, 20 V | 5 V | 67 nC | - 55 C | + 150 C | 540 W | Enhancement | Tube | |||||
90In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.5 kV | 3 A | 7.3 Ohms | - 30 V, 30 V | 2.5 V | 38.6 nC | - 55 C | + 150 C | 250 W | Enhancement | Tube | |||||
240In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 10 A | 1.1 Ohms | - 30 V, 30 V | 5.5 V | 40 nC | - 55 C | + 150 C | 300 W | Enhancement | HiPerFET | Tube | ||||
270In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 6 A | 2.2 Ohms | - 20 V, 20 V | 2.5 V | 95 nC | - 55 C | + 150 C | 300 W | Depletion | Tube | |||||
820In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1.2 kV | 600 mA | 34 Ohms | - 20 V, 20 V | 2 V | 13.3 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | |||||
450In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 300 V | 160 A | 19 mOhms | - 20 V, 20 V | 5 V | 335 nC | - 55 C | + 150 C | 1.39 kW | Enhancement | HiPerFET | Tube | ||||
240In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 300 V | 52 A | 73 mOhms | - 20 V, 20 V | 5 V | 110 nC | - 55 C | + 150 C | 400 W | Enhancement | HiPerFET | Tube | ||||
240In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.5 kV | 2 A | 15 Ohms | - 30 V, 30 V | 6 V | 72 nC | - 55 C | + 150 C | 290 W | Enhancement | Linear | Tube | ||||
240In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 300 V | 56 A | 27 mOhms | - 20 V, 20 V | 2.5 V | 56 nC | - 55 C | + 150 C | 320 W | Enhancement | HiPerFET | Tube | ||||
250In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 36 A | 45 mOhms | - 20 V, 20 V | 2.5 V | 21 nC | - 55 C | + 150 C | 170 W | Enhancement | HiPerFET | Tube | ||||
270In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1.5 kV | 1.83 A | 7.3 Ohms | - 30 V, 30 V | 2.5 V | - 55 C | + 150 C | 73 W | Tube | ||||||||
90In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 100 V | 140 A | 11 mOhms | - 20 V, 20 V | 5 V | 155 nC | - 55 C | + 175 C | 600 W | Enhancement | HiPerFET | Tube | ||||
300In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 6 A | 550 mOhms | - 20 V, 20 V | 4.5 V | 96 nC | - 55 C | + 150 C | 300 W | Depletion | Tube | |||||
Mfr: IXTH260N055T2 TTI: IXTH260N055T2 IXYS Availability: 30In StockMOSFETs TRENCHT2 PWR MOSFET 55V 260A | 30In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 55 V | 260 A | 3.3 mOhms | - 20 V, 20 V | 2 V | 140 nC | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | |||
240In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 100 V | 76 A | 25 mOhms | - 15 V, 15 V | 4 V | 197 nC | - 55 C | + 150 C | 298 W | Enhancement | TrenchP | Tube | ||||
150In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 85 V | 96 A | 13 mOhms | - 15 V, 15 V | 2 V | 180 nC | - 55 C | + 150 C | 298 W | Enhancement | Tube | |||||
150In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1.2 kV | 3 A | 4.5 Ohms | - 20 V, 20 V | 2.5 V | 42 nC | - 55 C | + 150 C | 200 W | Enhancement | Tube | |||||
800In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1.2 kV | 3 A | 4.5 Ohms | - 20 V, 20 V | 2.5 V | 42 nC | - 55 C | + 150 C | 150 W | Enhancement | Tube |
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