Littelfuse - MOSFETs
2,379 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 26 A | 270 mOhms | 30 V | 5 V | 72 nC | - 55 C | + 150 C | 460 W | Enhancement | PolarHV | Tube | ||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 600 V | 30 A | 240 mOhms | 30 V | - 55 C | + 150 C | 540 W | Enhancement | Tube | |||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 800 V | 3.5 A | 3 Ohms | 30 V | 5.5 V | 14.2 nC | - 55 C | + 150 C | 100 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1.2 kV | 1 A | 20 Ohms | 20 V | 4.5 V | 17.6 nC | - 55 C | + 150 C | 63 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 1.2 kV | 6 A | 2.6 Ohms | 20 V | 5 V | 56 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 32 A | 320 mOhms | 30 V | 6.5 V | 225 nC | - 55 C | + 150 C | 960 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 86 A | 29 mOhms | 30 V | 5 V | 90 nC | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 1 kV | 1.4 A | 11 Ohms | 20 V | 2.5 V | 17.8 nC | - 55 C | + 150 C | 63 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 2.4 A | 7.5 Ohms | 20 V | 4.5 V | 37 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 250 V | 96 A | 29 mOhms | 30 V | - 55 C | + 150 C | 625 W | Enhancement | HiPerFET | Tube | ||||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 200 V | 74 A | 34 mOhms | 20 V | 2.5 V | 107 nC | - 55 C | + 175 C | 400 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 130 A | 8.5 mOhms | - 55 C | + 175 C | 360 W | Enhancement | HiPerFET | Tube | |||||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 500 V | 26 A | 230 mOhms | 30 V | 5.5 V | 65 nC | - 55 C | + 150 C | 400 W | Enhancement | PolarHV | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 24 A | 150 mOhms | 30 V | 2.5 V | 98 nC | - 55 C | + 150 C | 208 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 18 A | 400 mOhms | 30 V | 3 V | 50 nC | - 55 C | + 150 C | 360 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 64 A | 96 mOhms | 30 V | 5 V | 200 nC | - 55 C | + 150 C | 1.04 mW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 800 V | 7 A | 1.4 Ohms | 30 V | 3 V | 32 nC | - 55 C | + 150 C | 200 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 800 V | 10 A | 1.1 Ohms | 30 V | 3 V | 40 nC | - 55 C | + 150 C | 300 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 150 V | 96 A | 24 mOhms | 20 V | - 55 C | + 175 C | 480 W | Enhancement | Tube | |||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 70 A | 45 mOhms | 20 V | 3.5 V | 150 nC | - 55 C | + 150 C | 625 W | Enhancement | CoolMOS | Tube | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | P-Channel | 1 Channel | 100 V | 50 A | 55 mOhms | 20 V | - 55 C | + 150 C | 300 W | Enhancement | Tube | |||||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 55 V | 110 A | 6.6 mOhms | 20 V | 2 V | 57 nC | - 55 C | + 175 C | 180 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 600 V | 16 A | 720 mOhms | 20 V | 2 V | 92 nC | - 55 C | + 150 C | 460 W | Enhancement | PolarP | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 75 V | 170 A | 5.4 mOhms | 20 V | 4 V | 109 nC | - 55 C | + 175 C | 360 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1 kV | 4 A | 3.3 Ohms | 20 V | 6 V | 26 nC | - 55 C | + 150 C | 150 W | Enhancement | HiPerFET | Tube |