Littelfuse - MOSFETs
2,379 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1.2 kV | 200 mA | 60 Ohms | 20 V | 4 V | 4.7 nC | - 55 C | + 150 C | 33 W | Enhancement | Tube | |||||
Mfr: IXFK220N17T2 TTI: IXFK220N17T2 IXYS Availability: 0In StockMOSFETs GigaMOS Trench T2 HiperFET Pwr MOSFET | 0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 170 V | 220 A | 6.3 mOhms | 20 V | 5 V | 500 nC | - 55 C | + 175 C | 1.25 kW | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 52 A | 120 mOhms | 30 V | 4.5 V | 113 nC | - 55 C | + 150 C | 960 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFK360N15T2 TTI: IXFK360N15T2 IXYS Availability: 0In StockMOSFETs GigaMOS Trench T2 HiperFET PWR MOSFET | 0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 150 V | 360 A | 4 mOhms | 20 V | 2.5 V | 715 nC | - 55 C | + 175 C | 1.67 mW | Enhancement | HiPerFET | Tube | |||
Mfr: IXFK360N10T TTI: IXFK360N10T IXYS Availability: 0In StockMOSFETs TRENCH HIPERFET PWR MOSFET 100V 360A | 0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 100 V | 360 A | 2.9 mOhms | 20 V | 4.5 V | 525 nC | - 55 C | + 175 C | 1.25 kW | Enhancement | HiPerFET | Tube | |||
Mfr: IXFP180N10T2 TTI: IXFP180N10T2 IXYS Availability: 0In StockMOSFETs TRENCHT2 HIPERFET PWR MOSFET 100V 180A | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 180 A | 6 mOhms | 20 V | 2 V | 185 nC | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 6 A | 550 mOhms | 20 V | 4.5 V | 96 nC | - 55 C | + 150 C | 300 W | Depletion | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 1.6 A | 2.3 Ohms | 20 V | 4.5 V | 23.7 nC | - 55 C | + 150 C | 100 W | Depletion | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 1 A | 10 Ohms | 20 V | 4 V | 9 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 250 V | 50 A | 60 mOhms | 30 V | 5 V | 78 nC | - 55 C | + 150 C | 400 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 85 V | 24 A | 65 mOhms | 15 V | 4.5 V | 41 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchP | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 150 V | 102 A | 18 mOhms | HiPerFET | Tube | ||||||||||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 200 V | 170 A | 11 mOhms | 20 V | 5 V | 265 nC | - 55 C | + 175 C | 1.15 kW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 250 V | 140 A | 17 mOhms | 20 V | 5 V | 255 nC | - 55 C | + 150 C | 960 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFH42N60P3 TTI: IXFH42N60P3 IXYS Availability: 0In StockMOSFETs 600V 42A 0.185Ohm PolarP3 Power MOSFET | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 42 A | 185 mOhms | 30 V | 5 V | 78 nC | - 55 C | + 150 C | 830 W | Enhancement | HiPerFET | Tube | |||
Mfr: IXFX98N50P3 TTI: IXFX98N50P3 IXYS Availability: 0In StockMOSFETs 500V 98A 0.05Ohm PolarP3 Power MOSFET | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 98 A | 50 mOhms | 30 V | 5 V | 197 nC | - 55 C | + 150 C | 1.3 kW | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | ISOPLUS-i4-PAK-5 | N-Channel | 1 Channel | 75 V | 120 A | 5.8 mOhms | 30 V | 2 V | 178 nC | - 55 C | + 175 C | 170 W | Enhancement | Tube | |||||
Not Available Online | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 15 A | 190 mOhms | 20 V | 3.9 V | 87 nC | - 55 C | + 150 C | 125 W | Enhancement | CoolMOS | Box | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 500 V | 70 A | 52 mOhms | 30 V | 5 V | 240 nC | - 55 C | + 150 C | 625 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 100 V | 170 A | 9 mOhms | 20 V | - 55 C | + 175 C | 714 W | Enhancement | Tube | |||||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 300 V | 102 A | 33 mOhms | 20 V | 5 V | 224 nC | - 55 C | + 150 C | 700 W | Enhancement | PolarHT | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 16 A | 400 mOhms | 30 V | 5.5 V | 43 nC | - 55 C | + 150 C | 300 W | Enhancement | PolarHV | Tube | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 500 V | 36 A | 170 mOhms | 30 V | 5 V | 85 nC | - 55 C | + 150 C | 540 W | Enhancement | PolarHV | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 1.4 A | 11 Ohms | 20 V | 2.5 V | 17.8 nC | - 55 C | + 150 C | 63 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 2 A | 7.5 Ohms | 20 V | 2.5 V | 24.3 nC | - 55 C | + 150 C | 86 W | Enhancement | Tube |