Littelfuse - MOSFETs
2,379 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
500In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 65 V | 120 A | 10 mOhms | 15 V | 2 V | 185 nC | - 55 C | + 150 C | 298 W | Enhancement | TrenchP | Tube | ||||
60In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 230 A | 7.5 mOhms | 20 V | 3 V | 358 nC | - 55 C | + 175 C | 1.67 kW | Enhancement | HiPerFET | Tube | ||||
450In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | P-Channel | 1 Channel | 600 V | 10 A | 1 Ohms | 20 V | 5 V | 135 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | |||||
Mfr: IXFK140N30P TTI: IXFK140N30P IXYS Availability: 400In Stock100 On Order Expected 16-Dec-26 MOSFETs 140 Amps 300V 0.024 Ohms Rds | 400In Stock100 On Order Expected 16-Dec-26 | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 300 V | 140 A | 24 mOhms | 20 V | 3 V | 185 nC | - 55 C | + 150 C | 1.04 kW | Enhancement | HiPerFET | Tube | |||
1,450In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 75 V | 80 A | 24 mOhms | 20 V | 2.5 V | 103 nC | - 55 C | + 150 C | 357 W | Enhancement | Tube | |||||
570In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 300 V | 88 A | 40 mOhms | 20 V | 5 V | 180 nC | - 55 C | + 150 C | 600 W | Enhancement | PolarHT | Tube | ||||
650In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1.2 kV | 3 A | 4.5 Ohms | 20 V | 2.5 V | 42 nC | - 55 C | + 150 C | 200 W | Enhancement | Tube | |||||
50In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 100 V | 76 A | 24 mOhms | 15 V | 2 V | 197 nC | - 55 C | + 150 C | 298 W | Enhancement | Tube | |||||
150In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 48 A | 65 mOhms | 30 V | 3 V | 76 nC | - 55 C | + 150 C | 660 W | Enhancement | HiPerFET | Tube | ||||
400In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 3 kV | 1 A | 50 Ohms | 20 V | 2 V | 30.6 nC | - 55 C | + 150 C | 195 W | Enhancement | Tube | |||||
Mfr: IXTP80N10T TTI: IXTP80N10T IXYS Availability: 300In Stock600 On Order Expected 27-Apr-27 MOSFETs 80 Amps 100V 13.0 Rds | 300In Stock600 On Order Expected 27-Apr-27 | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 80 A | 14 mOhms | 20 V | 2.5 V | 60 nC | - 55 C | + 175 C | 230 W | Enhancement | HiPerFET | Tube | |||
700In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 500 V | 800 mA | 4.6 Ohms | 20 V | 4.5 V | 12.7 nC | - 55 C | + 150 C | 60 W | Depletion | Tube | |||||
140In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 500 V | 1.6 A | 2.3 Ohms | 20 V | 4.5 V | 23.7 nC | - 55 C | + 150 C | 100 W | Depletion | Tube | |||||
100In Stock | Si | Through Hole | TO-264-3 | P-Channel | 1 Channel | 600 V | 32 A | 350 mOhms | 20 V | 4 V | 196 nC | - 55 C | + 150 C | 890 W | Enhancement | PolarP | Tube | ||||
Mfr: IXFH26N50P TTI: IXFH26N50P IXYS Availability: 5,910In Stock210 On Order Expected 09-Feb-27 MOSFETs HiPERFET Id26 BVdass500 | 5,910In Stock210 On Order Expected 09-Feb-27 | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 26 A | 230 mOhms | 30 V | 3 V | 60 nC | - 55 C | + 150 C | 400 W | Enhancement | HiPerFET | Tube | |||
Mfr: IXTH02N250 TTI: IXTH02N250 IXYS Availability: 150In StockMOSFETs High Voltage Power MOSFET; 2500V, 0.2A | 150In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 2.5 kV | 200 mA | 450 Ohms | 20 V | 2.5 V | 7.4 nC | - 55 C | + 150 C | 83 W | Enhancement | Tube | ||||
250In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 12 A | 300 mOhms | 30 V | 2.5 V | 17.7 nC | - 55 C | + 150 C | 180 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXTT16N20D2 TTI: IXTT16N20D2 IXYS Availability: 140In StockMOSFETs D2 Depletion Mode Power MOSFETs | 140In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 200 V | 16 A | 73 mOhms | 20 V | 4.5 V | 208 nC | - 55 C | + 150 C | 695 W | Depletion | Tube | ||||
300In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 150 V | 44 A | 65 mOhms | 15 V | - 55 C | + 150 C | 298 W | Enhancement | Tube | |||||||
50In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 100 V | 76 A | 25 mOhms | 15 V | 2 V | 197 nC | - 55 C | + 150 C | 298 W | Enhancement | TrenchP | Tube | ||||
60In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 65 V | 120 A | 10 mOhms | 15 V | 4 V | 58 nC | - 55 C | + 150 C | 298 W | Enhancement | TrenchP | Tube | ||||
270In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 150 V | 120 A | 16 mOhms | 20 V | 3 V | 150 nC | - 55 C | + 175 C | 600 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFK64N60P3 TTI: IXFK64N60P3 IXYS Availability: 25In StockMOSFETs 600V 64A 0.095Ohm PolarP3 Power MOSFET | 25In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 600 V | 64 A | 95 mOhms | 30 V | 5 V | 145 nC | - 55 C | + 150 C | 1.13 kW | Enhancement | HiPerFET | Tube | |||
Mfr: IXFH60N65X2 TTI: IXFH60N65X2 IXYS Availability: 180In StockMOSFETs MOSFET 650V/60A Ultra Junction X2 | 180In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 60 A | 52 mOhms | 30 V | 2.7 V | 107 nC | - 55 C | + 150 C | 780 W | Enhancement | HiPerFET | Tube | |||
280In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 1.2 kV | 1.4 A | 15 Ohms | 30 V | 4.5 V | 24.8 nC | - 55 C | + 150 C | 86 W | Enhancement | Tube |