MOSFETs
18,590 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
6,270,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 60 V | 300 mA | 4.5 Ohms | - 20 V, 20 V | 1.1 V | 330 pC | - 55 C | + 150 C | 325 mW | Enhancement | Reel | 934661281215 | |||||
Mfr: IRFBG30PBF TTI: IRFBG30PBF Vishay Semiconductors Availability: 1,650In Stock2,000 On Order Expected 03-Jun-27 MOSFETs TO220 1KV 3.1A N-CH MOSFET | 1,650In Stock2,000 On Order Expected 03-Jun-27 | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 3.1 A | 5 Ohms | - 20 V, 20 V | 4 V | 80 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRFBG30PBF-BE3 | ||||
Mfr: SUM90P10-19L-E3 TTI: SUM90P10-19L-E3 Vishay Semiconductors Availability: 15,200In StockMOSFETs 100V 90A 375W 19mohm @ 10V | 15,200In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 100 V | 90 A | 19 mOhms | - 20 V, 20 V | 1 V | 217 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | ||||
156,000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 20 V | 3.5 A | 55 mOhms | - 12 V, 12 V | 750 mV | 11 nC | - 55 C | + 150 C | 930 mW | Enhancement | Reel | 934065361215 | |||||
7,250In Stock1,000 On Order Expected 10-Jun-27 | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 14 A | 160 mOhms | - 20 V, 20 V | 4 V | 26 nC | - 55 C | + 175 C | 88 W | Enhancement | Tube | IRF530PBF-BE3 IRF520SPBF | |||||
57,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 60 V | 400 mA | 1.5 Ohms | - 20 V, 20 V | 1.1 V | 390 pC | - 55 C | + 150 C | 1 W | Enhancement | U-MOSVII-H | Reel | |||||
Mfr: IRF9640PBF TTI: IRF9640PBF Vishay Semiconductors Availability: 5,650In StockMOSFETs TO220 200V 11A P-CH MOSFET | 5,650In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 200 V | 11 A | 500 mOhms | - 20 V, 20 V | 4 V | 44 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRF9640PBF-BE3 | ||||
Mfr: SI2302CDS-T1-GE3 TTI: SI2302CDS-T1-GE3 Vishay Semiconductors Availability: 60,000In Stock72,000 On Order Expected MOSFETs 20V Vds 8V Vgs SOT-23 | 60,000In Stock72,000 On Order Expected | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 20 V | 2.9 A | 57 mOhms | - 8 V, 8 V | 850 mV | 3.5 nC | - 55 C | + 150 C | 860 mW | Enhancement | TrenchFET | Reel | SI2302CDS-T1-BE3 SI2302CDS-GE3 | |||
700In Stock2,600 On Order Expected 07-Oct-26 | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 10 A | 550 mOhms | - 20 V, 20 V | 4 V | 63 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRF740PBF-BE3 SIHF740-E3 | |||||
12,000In Stock15,000 On Order Expected | Si | SMD/SMT | SOT-363-6 | N-Channel | 2 Channel | 50 V | 200 mA | 2.2 Ohms | - 8 V, 8 V | 1 V | - 55 C | + 150 C | 150 mW | Enhancement | Reel | UM6K33N | ||||||
Mfr: IRFBG30PBF-BE3 TTI: IRFBG30PBF-BE3 Vishay / Siliconix Availability: 14,100In StockMOSFETs TO220 1KV 3.1A N-CH MOSFET | 14,100In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 3.1 A | 5 Ohms | - 20 V, 20 V | 4 V | 80 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRFBG30PBF | ||||
Mfr: SI2356DS-T1-GE3 TTI: SI2356DS-T1-GE3 Vishay Semiconductors Availability: 27,000In Stock39,000 On Order Expected MOSFETs 40V Vds 12V Vgs SOT-23 | 27,000In Stock39,000 On Order Expected | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 40 V | 4.3 A | 51 mOhms | - 12 V, 12 V | 1.5 V | 3.8 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2356DS-T1-BE3 | |||
Mfr: SISS27DN-T1-GE3 TTI: SISS27DN-T1-GE3 Vishay Semiconductors Availability: 12,000In StockMOSFETs -30V Vds 20V Vgs PowerPAK 1212-8S | 12,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 30 V | 50 A | 5.6 mOhms | - 20 V, 20 V | 1 V | 92 nC | - 55 C | + 150 C | 57 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: IRFP360PBF TTI: IRFP360PBF Vishay Semiconductors Availability: 6,000In StockMOSFETs TO247 400V 23A N-CH MOSFET | 6,000In Stock | Si | Through Hole | TO-247AC-3 | N-Channel | 1 Channel | 400 V | 23 A | 200 mOhms | - 20 V, 20 V | 2 V | 210 nC | - 55 C | + 150 C | 280 W | Enhancement | Tube | |||||
Mfr: IRF9530PBF TTI: IRF9530PBF Vishay Semiconductors Availability: 21In Stock1,000 On Order Expected 16-Jun-27 MOSFETs TO220 100V 12A P-CH MOSFET | 21In Stock1,000 On Order Expected 16-Jun-27 | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 100 V | 12 A | 300 mOhms | - 20 V, 20 V | 4 V | 38 nC | - 55 C | + 175 C | 88 W | Enhancement | Tube | IRF9530PBF-BE3 | ||||
1,150In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 5.6 A | 540 mOhms | - 20 V, 20 V | 4 V | 8.3 nC | - 55 C | + 175 C | 43 W | Enhancement | Tube | IRF510PBF-BE3 | |||||
Mfr: IRFR420PBF TTI: IRFR420PBF Vishay Semiconductors Availability: 49,425In StockMOSFETs TO252 500V 3.3A N-CH MOSFET | 49,425In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 500 V | 3.3 A | 3 Ohms | - 30 V, 30 V | 2 V | 17 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | |||||
Mfr: RE1C002UNTCL TTI: RE1C002UNTCL ROHM Semiconductor Availability: 63,000In StockMOSFETs 1.2V Drive Nch MOSFET | 63,000In Stock | Si | SMD/SMT | SOT-416FL-3 | N-Channel | 1 Channel | 20 V | 200 mA | 1.2 Ohms | - 8 V, 8 V | 1 V | - 55 C | + 150 C | 150 mW | Enhancement | Reel | RE1C002UN | |||||
550In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 4.5 A | 1.5 Ohms | - 20 V, 20 V | 4 V | 38 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | IRF830PBF-BE3 SIHF830-E3 | |||||
Mfr: IRF9540PBF TTI: IRF9540PBF Vishay Semiconductors Availability: 5,200In StockMOSFETs TO220 100V 19A P-CH MOSFET | 5,200In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 100 V | 19 A | 200 mOhms | - 20 V, 20 V | 4 V | 61 nC | - 55 C | + 175 C | 150 W | Enhancement | Tube | IRF9540PBF-BE3 | ||||
Mfr: SI9407BDY-T1-GE3 TTI: SI9407BDY-T1-GE3 Vishay Semiconductors Availability: 5,000In StockMOSFETs -60V Vds 20V Vgs SO-8 | 5,000In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 60 V | 4.7 A | 120 mOhms | - 20 V, 20 V | 1 V | 14.5 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI9407BDY-GE3 | |||
Mfr: SSM3J356R,LF TTI: SSM3J356R,LF Toshiba Availability: 33,000In StockMOSFETs Small-signal MOSFET ID: -2A, VDSS: -60V | 33,000In Stock | Si | SMD/SMT | SOT-23F-3 | P-Channel | 1 Channel | 60 V | 2 A | 300 mOhms | - 20 V, 10 V | 800 mV | + 150 C | 1 W | Enhancement | AEC-Q101 | U-MOSVI | Reel | |||||
Mfr: SSM3J328R,LF TTI: SSM3J328R,LF Toshiba Availability: 51,000In Stock15,000 On Order Expected 26-Oct-26 MOSFETs P-Ch Sm Sig FET Id -6A -20V -8VGSS | 51,000In Stock15,000 On Order Expected 26-Oct-26 | Si | SMD/SMT | SOT-23F-3 | P-Channel | 1 Channel | 20 V | 6 A | 29.8 mOhms | - 8 V, 8 V | 300 mV | 12.8 nC | + 150 C | 1 W | Enhancement | U-MOSVI | Reel | |||||
9,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 60 V | 200 mA | 3.9 Ohms | - 20 V, 20 V | 1.1 V | 270 pC | - 55 C | + 150 C | 1 W | Enhancement | U-MOSVII-H | Reel | |||||
Mfr: SI2371EDS-T1-GE3 TTI: SI2371EDS-T1-GE3 Vishay Semiconductors Availability: 21,000In StockMOSFETs -30V Vds 12V Vgs SOT-23 | 21,000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 4.8 A | 45 mOhms | - 12 V, 12 V | 1.5 V | 10.6 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2371EDS-T1-BE3 |
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