MOSFETs
18,730 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: 2N7002K-T1-GE3 TTI: 2N7002K-T1-GE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs 60V Vds 20V Vgs SOT-23 | 9,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 60 V | 300 mA | 2 Ohms | 20 V | 1 V | 400 pC | - 55 C | + 150 C | 350 mW | Enhancement | Reel | 2N7002K-GE3 | ||||
Mfr: 2N7002NXAKR TTI: 2N7002NXAKR Nexperia Availability: 6,087,000In StockMOSFETs 2N7002NXAK/SOT23/TO-236AB | 6,087,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 60 V | 300 mA | 4.5 Ohms | 20 V | 1.1 V | 330 pC | - 55 C | + 150 C | 325 mW | Enhancement | Reel | 934661281215 | ||||
126,000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 20 V | 3.5 A | 55 mOhms | 12 V | 750 mV | 11 nC | - 55 C | + 150 C | 930 mW | Enhancement | Reel | 934065361215 | |||||
Mfr: SI2302CDS-T1-GE3 TTI: SI2302CDS-T1-GE3 Vishay Semiconductors Availability: 57,000In StockMOSFETs 20V Vds 8V Vgs SOT-23 | 57,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 20 V | 2.9 A | 57 mOhms | 8 V | 850 mV | 3.5 nC | - 55 C | + 150 C | 860 mW | Enhancement | TrenchFET | Reel | SI2302CDS-T1-BE3 SI2302CDS-GE3 | |||
39,850In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 8 A | 850 mOhms | 20 V | 4 V | 63 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRF840PBF-BE3 SIHF840-E3 | |||||
Mfr: IRF9640PBF TTI: IRF9640PBF Vishay Semiconductors Availability: 6,750In StockMOSFETs TO220 200V 11A P-CH MOSFET | 6,750In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 200 V | 11 A | 500 mOhms | 20 V | 4 V | 44 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRF9640PBF-BE3 | ||||
Mfr: SUM90P10-19L-E3 TTI: SUM90P10-19L-E3 Vishay Semiconductors Availability: 18,400In StockMOSFETs 100V 90A 375W 19mohm @ 10V | 18,400In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 100 V | 90 A | 19 mOhms | 20 V | 1 V | 217 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | ||||
5,200In Stock3,000 On Order Expected | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 18 A | 180 mOhms | 20 V | 4 V | 70 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRF640PBF-BE3 | |||||
2,100In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 14 A | 160 mOhms | 20 V | 4 V | 26 nC | - 55 C | + 175 C | 88 W | Enhancement | Tube | IRF530PBF-BE3 IRF520SPBF | |||||
Mfr: IRFBG30PBF TTI: IRFBG30PBF Vishay Semiconductors Availability: 8,100In StockMOSFETs TO220 1KV 3.1A N-CH MOSFET | 8,100In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 3.1 A | 5 Ohms | 20 V | 4 V | 80 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRFBG30PBF-BE3 | ||||
Mfr: SI2356DS-T1-GE3 TTI: SI2356DS-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 40V Vds 12V Vgs SOT-23 | 3,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 40 V | 4.3 A | 51 mOhms | 12 V | 1.5 V | 3.8 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2356DS-T1-BE3 | |||
Mfr: SI2309CDS-T1-BE3 TTI: SI2309CDS-T1-BE3 Vishay / Siliconix Availability: 51,000In StockMOSFETs SOT23 P-CH 60V 1.2A | 51,000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 60 V | 1.6 A | 345 mOhms | 20 V | 3 V | 2.7 nC | - 55 C | + 150 C | 1.7 W | Enhancement | Reel | SI2309CDS-T1-GE3 | ||||
Mfr: SI9407BDY-T1-GE3 TTI: SI9407BDY-T1-GE3 Vishay Semiconductors Availability: 2,500In Stock2,500 On Order Expected 05-Oct-26 MOSFETs -60V Vds 20V Vgs SO-8 | 2,500In Stock2,500 On Order Expected 05-Oct-26 | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 60 V | 4.7 A | 120 mOhms | 20 V | 1 V | 14.5 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI9407BDY-GE3 | |||
Mfr: IRFS9N60APBF TTI: IRFS9N60APBF Vishay Semiconductors Availability: 2,150In StockMOSFETs TO263 600V 9.2A N-CH MOSFET | 2,150In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 9.2 A | 750 mOhms | 30 V | 2 V | 49 nC | - 55 C | + 150 C | 170 W | Enhancement | Tube | |||||
Mfr: IRFP460APBF TTI: IRFP460APBF Vishay Semiconductors Availability: 3,150In StockMOSFETs TO247 500V 20A N-CH MOSFET | 3,150In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 20 A | 270 mOhms | 30 V | 2 V | 105 nC | - 55 C | + 150 C | 280 W | Enhancement | Tube | |||||
Mfr: IRFP264PBF TTI: IRFP264PBF Vishay Semiconductors Availability: 11,800In StockMOSFETs TO247 250V 38A N-CH MOSFET | 11,800In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 250 V | 38 A | 75 mOhms | 20 V | 2 V | 210 nC | - 55 C | + 150 C | 280 W | Enhancement | Tube | |||||
Mfr: IRF9540SPBF TTI: IRF9540SPBF Vishay Semiconductors Availability: 2,050In StockMOSFETs TO263 100V 19A P-CH MOSFET | 2,050In Stock | Si | SMD/SMT | TO-263-3 | P-Channel | 1 Channel | 100 V | 19 A | 200 mOhms | 20 V | 2 V | 61 nC | - 55 C | + 175 C | 150 W | Enhancement | Tube | |||||
Mfr: SI4214DDY-T1-GE3 TTI: SI4214DDY-T1-GE3 Vishay Semiconductors Availability: 50,000In StockMOSFETs 30V Vds 20V Vgs SO-8 | 50,000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 2 Channel | 30 V | 8.5 A | 19.5 mOhms | 20 V | 1.2 V | 14.5 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI4920DY-T1-E3-S | |||
Mfr: IRF640PBF-BE3 TTI: IRF640PBF-BE3 Vishay / Siliconix Availability: 28,600In StockMOSFETs TO220 200V 18A N-CH MOSFET | 28,600In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 18 A | 180 mOhms | 20 V | 4 V | 7 nC | - 55 C | + 150 C | 125 mW | Enhancement | Tube | IRF640PBF | ||||
Mfr: IRFL110TRPBF-BE3 TTI: IRFL110TRPBF-BE3 Vishay / Siliconix Availability: 47,500In StockMOSFETs SOT223 100V 1.5A N-CH MOSFET | 47,500In Stock | Si | SMD/SMT | SOT-223-4 | N-Channel | 1 Channel | 100 V | 1.5 A | 540 mOhms | 20 V | 4 V | 8.3 nC | - 55 C | + 150 C | 3.1 W | Enhancement | Reel | IRFL110TRPBF | ||||
Mfr: IRFI9634GPBF TTI: IRFI9634GPBF Vishay Semiconductors Availability: 950In StockMOSFETs TO220 250V 4.1A P-CH MOSFET | 950In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 250 V | 4.1 A | 1 Ohms | 20 V | 4 V | 38 nC | - 55 C | + 150 C | 35 W | Enhancement | Tube | |||||
Mfr: IRFP140PBF TTI: IRFP140PBF Vishay Semiconductors Availability: 2,000In Stock9,500 On Order Expected MOSFETs TO247 100V 31A N-CH MOSFET | 2,000In Stock9,500 On Order Expected | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 31 A | 77 mOhms | 20 V | 2 V | 72 nC | - 55 C | + 175 C | 180 W | Enhancement | Tube | |||||
Mfr: SSM3J351R,LF TTI: SSM3J351R,LF Toshiba Availability: 123,000In StockMOSFETs Small-signal MOSFET ID -3.5A, -60V VDSS | 123,000In Stock | Si | SMD/SMT | SOT-23F-3 | P-Channel | 1 Channel | 60 V | 3.5 A | 164 mOhms | - 20 V, 10 V | 800 mV | 15.1 nC | - 55 C | + 150 C | 2 W | Enhancement | AEC-Q101 | U-MOSVI | Reel | |||
Mfr: IRFP450PBF TTI: IRFP450PBF Vishay Semiconductors Availability: 1,575In StockMOSFETs TO247 500V 14A N-CH MOSFET | 1,575In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 14 A | 400 mOhms | 20 V | 2 V | 150 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | |||||
1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 5.6 A | 540 mOhms | 20 V | 4 V | 8.3 nC | - 55 C | + 175 C | 43 W | Enhancement | Tube | IRF510PBF-BE3 |