Toshiba - JFETs
29 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Configuration | Vds - Drain-Source Breakdown Voltage | Vgs - Gate-Source Breakdown Voltage | Gate-Source Cutoff Voltage | Drain-Source Current at Vgs=0 | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Pd - Power Dissipation | Minimum Operating Temperature | Maximum Operating Temperature | Series | Qualification | Packaging |
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Not Available Online | Si | Through Hole | TO-92-3 | N-Channel | Single | 12 mA | 2SJ74 | Tray | ||||||||||||
Mfr: 2SK170-GR(F) TTI: Not Assigned Toshiba Availability: Not Available OnlineJFETs N CHANNEL JFET Vds 10V Idss 3mA | Not Available Online | Si | Through Hole | TC-92 | N-Channel | Single | 10 V | - 200 mV | 2.6 mA | 1 mA | 400 mW | - 55 C | + 125 C | 2SK170 | Tube | |||||
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