IXGR55N120 - IGBTs
1 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Package / Case | Mounting Style | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Maximum Gate Emitter Voltage | Continuous Collector Current at 25 C | Pd - Power Dissipation | Minimum Operating Temperature | Maximum Operating Temperature | Series | Qualification | Packaging |
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Mfr: IXGR55N120A3H1 TTI: IXGR55N120A3H1 IXYS Availability: 0In StockIGBTs High Frequency Range 40khz C-IGBT w/Diode | 0In Stock | Si | TO-247AD-3 | Through Hole | Single | 1.2 kV | 2.2 V | 20 V | 70 A | - 55 C | + 150 C | IXGR55N120 | Tube |