IGBTs
1,459 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Package / Case | Mounting Style | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Maximum Gate Emitter Voltage | Continuous Collector Current at 25 C | Pd - Power Dissipation | Minimum Operating Temperature | Maximum Operating Temperature | Series | Qualification | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Not Available Online | - 20 V, 20 V | |||||||||||||||||
0In Stock | Si | D2PAK-3 (TO-263-3) | SMD/SMT | Single | 1.2 kV | 2.4 V | - 20 V, 20 V | 22 A | 100 W | - 55 C | + 150 C | Reel | ||||||
Not Available Online | Si | TO-247-3 | Through Hole | Single | 230 W | - 55 C | + 175 C | Tube | ||||||||||
Not Available Online | Si | TO-3PFM-3 | Through Hole | Single | 650 V | 1.9 V | 30 V | 39 A | 85 W | - 40 C | + 175 C | Tube | RGTV80TK65D | |||||
Not Available Online | Si | TO-247N-3 | Through Hole | Single | 650 V | 1.9 V | - 30 V, 30 V | 78 A | 234 W | - 40 C | + 175 C | Tube | RGTV80TS65 | |||||
Not Available Online | Si | TO-247N-3 | Through Hole | Single | 650 V | 1.9 V | - 30 V, 30 V | 40 A | 136 W | - 40 C | + 175 C | Tube | RGW40TS65 | |||||
Not Available Online | Si | TO-247N-3 | Through Hole | Single | 650 V | 1.9 V | - 30 V, 30 V | 50 A | 156 W | - 40 C | + 175 C | Tube | RGW50TS65D | |||||
Not Available Online | Si | D2PAK-3 (TO-263-3) | SMD/SMT | Single | 1 kV | 2.7 V | - 20 V, 20 V | - 55 C | + 150 C | IXGA8N100 | Tube | |||||||
Not Available Online | Si | TO-247AD-3 | Through Hole | Single | 1.2 kV | - 20 V, 20 V | - 55 C | + 150 C | IXGH15N120 | Tube | ||||||||
0In Stock | Si | TO-268-3 | SMD/SMT | Single | 1.2 kV | - 20 V, 20 V | - 55 C | + 150 C | IXGT40N120 | Tube | ||||||||
Not Available Online | - 20 V, 20 V | Tube | ||||||||||||||||
Mfr: RGT8BM65DGTL1 TTI: Not Assigned ROHM Semiconductor Availability: Not Available OnlineIGBTs 5us Short-Circuit Tolerance, 650V 4A, FRD Built-in, TO-252, Field Stop Trench IGBT | Not Available Online | Si | TO-252GE-3 | SMD/SMT | Single | 650 V | 2.1 V | 30 V | 12 A | 62 W | - 40 C | + 175 C | Reel | |||||
Not Available Online | Si | TO-247AD-3 | Through Hole | Single | 1.2 kV | - 20 V, 20 V | - 55 C | + 150 C | IXGH20N120 | Tube | ||||||||
Not Available Online | Si | TO-247AD-3 | IXGH12N100 | Tube | ||||||||||||||
Not Available Online | Si | IXGP12N100 | Tube | |||||||||||||||
Mfr: RGT8NS65DGTL TTI: Not Assigned ROHM Semiconductor Availability: Not Available OnlineIGBTs 650V 4A IGBT Stop Trench | Not Available Online | Si | TO-262-3 | Through Hole | Single | 650 V | 2.1 V | 30 V | 8 A | 65 W | - 40 C | + 175 C | RGT8NS65D | Reel | RGT8NS65D(LPDS) | |||
Not Available Online | Si | D2PAK-3 (TO-263-3) | SMD/SMT | Single | 1 kV | - 20 V, 20 V | - 55 C | + 150 C | IXGA4N100 | Tube | ||||||||
Not Available Online | Si | TO-247N-3 | Through Hole | Single | 650 V | 2.15 V | 30 V | 114 A | 404 W | - 40 C | + 175 C | Tube | RGSX5TS65E | |||||
Not Available Online | Si | TO-247N-3 | Through Hole | Single | 650 V | 2.15 V | 30 V | 114 A | 404 W | - 40 C | + 175 C | Tube | RGSX5TS65EHR | |||||
Not Available Online | SiC | TO-247N-3 | Through Hole | Single | 650 V | 1.9 V | 30 V | 64 A | 178 W | - 40 C | + 175 C | Tube | RGW60TS65CHR | |||||
0In Stock | Si | TO-247GE-3 | Through Hole | Single | 650 V | 2.1 V | 30 V | 85 A | 277 W | - 40 C | + 175 C | Tube | RGTH00TS65D | |||||
0In Stock | Si | TO-247GE-3 | Through Hole | Single | 650 V | 2.1 V | 30 V | 50 A | 174 W | - 40 C | + 175 C | Tube | RGTH50TS65 | |||||
0In Stock | Si | TO-247N-3 | Through Hole | Single | 650 V | 1.9 V | 30 V | 80 A | 214 W | - 40 C | + 175 C | Tube | RGW80TS65EHR | |||||
0In Stock | Si | TO-247N-3 | Through Hole | Single | 650 V | 1.9 V | 30 V | 80 A | 214 W | - 40 C | + 175 C | Tube | RGW80TS65HR | |||||
Not Available Online | Capsule Type |