GT60M303 - Toshiba - IGBTs
1 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Package / Case | Mounting Style | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Maximum Gate Emitter Voltage | Continuous Collector Current at 25 C | Pd - Power Dissipation | Minimum Operating Temperature | Maximum Operating Temperature | Series | Qualification | Packaging |
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Mfr: GT60M303(Q) TTI: Not Assigned Toshiba Availability: Not Available OnlineIGBTs 900V/60A DIS+FRD Trench | Not Available Online | Si | TO-3P | Through Hole | Single | 900 V | - 25 V, 25 V | 60 A | 170 W | - 55 C | + 150 C | GT60M303 |