GT50JR22 - Toshiba - IGBTs
2 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Package / Case | Mounting Style | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Maximum Gate Emitter Voltage | Continuous Collector Current at 25 C | Pd - Power Dissipation | Minimum Operating Temperature | Maximum Operating Temperature | Series | Qualification | Packaging |
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Mfr: GT50JR22(STA1,E,S) TTI: Not Assigned Toshiba Availability: 0In StockIGBTs IGBT for Soft Switching Apps | 0In Stock | Si | Through Hole | Single | 600 V | 1.55 V | - 25 V, 25 V | 50 A | 230 W | - 55 C | + 175 C | GT50JR22 | Tray | ||||
Not Available Online | - 25 V, 25 V | GT50JR22 |
