GT40T301 - Toshiba - IGBTs
1 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Package / Case | Mounting Style | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Maximum Gate Emitter Voltage | Continuous Collector Current at 25 C | Pd - Power Dissipation | Minimum Operating Temperature | Maximum Operating Temperature | Series | Qualification | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Not Available Online | Si | TO-3P(LH)-3 | Through Hole | Single | 1.5 kV | - 25 V, 25 V | - 55 C | + 150 C | GT40T301 |
