Toshiba - IGBTs
51 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Package / Case | Mounting Style | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Maximum Gate Emitter Voltage | Continuous Collector Current at 25 C | Pd - Power Dissipation | Minimum Operating Temperature | Maximum Operating Temperature | Series | Qualification | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Not Available Online | Si | TO-3PN-3 | Through Hole | Single | 600 V | 1.45 V | - 25 V, 25 V | 50 A | 230 W | - 55 C | + 175 C | GT50JR21 |
