Toshiba - IGBTs
53 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Package / Case | Mounting Style | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Maximum Gate Emitter Voltage | Continuous Collector Current at 25 C | Pd - Power Dissipation | Minimum Operating Temperature | Maximum Operating Temperature | Series | Qualification | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Not Available Online | Si | TO-3PN-3 | Through Hole | Single | 600 V | 1.6 V | - 25 V, 25 V | 50 A | 200 W | - 55 C | + 175 C | GT50J341 | |||||
Not Available Online | Si | TO-3PN-3 | Through Hole | Single | 1.8 kV | 2.9 V | - 25 V, 25 V | 40 A | 375 W | - 55 C | + 175 C | GT40WR21 | |||||
Mfr: GT25Q301(Q) TTI: Not Assigned Toshiba Availability: Not Available OnlineIGBTs High Power Motor N Channel IGBT 2.7V | Not Available Online | Si | TO-3P | Through Hole | Single | 1.2 kV | - 20 V, 20 V | 25 A | - 55 C | + 150 C | GT25Q301 |
