Toshiba - IGBTs
51 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Package / Case | Mounting Style | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Maximum Gate Emitter Voltage | Continuous Collector Current at 25 C | Pd - Power Dissipation | Minimum Operating Temperature | Maximum Operating Temperature | Series | Qualification | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Not Available Online | |||||||||||||||||
Not Available Online | GT50N324 | ||||||||||||||||
Not Available Online | Si | TO-3PN-3 | Through Hole | Single | 1 kV | 2.2 V | - 25 V, 25 V | 50 A | 156 W | - 55 C | + 150 C | GT50N322 | Tube | ||||
Not Available Online | Si | TO-3PN-3 | Through Hole | Single | 1.2 kV | 1.5 V | - 25 V, 25 V | 40 A | 230 W | - 55 C | + 175 C | GT40QR21 | |||||
Not Available Online | Si | TO-3PN-3 | Through Hole | Single | 1.35 kV | 1.6 V | - 25 V, 25 V | 40 A | 230 W | - 55 C | + 175 C | GT40RR21 | |||||
Mfr: GT60M303(Q) TTI: Not Assigned Toshiba Availability: Not Available OnlineIGBTs 900V/60A DIS+FRD Trench | Not Available Online | Si | TO-3P | Through Hole | Single | 900 V | - 25 V, 25 V | 60 A | 170 W | - 55 C | + 150 C | GT60M303 | |||||
Not Available Online | Si | TO-3PN-3 | Through Hole | Single | 1.2 kV | 1.5 V | - 25 V, 25 V | 40 A | 230 W | - 55 C | + 175 C | GT40QR21 | |||||
Not Available Online | Si | TO-3PN-3 | Through Hole | Single | 600 V | 1.6 V | - 25 V, 25 V | 50 A | 200 W | - 55 C | + 175 C | GT50J341 | |||||
Not Available Online | Si | TO-3PN-3 | Through Hole | Single | 600 V | 1.45 V | - 25 V, 25 V | 50 A | 230 W | - 55 C | + 175 C | GT50JR21 | |||||
Not Available Online | Si | TO-3P | Through Hole | Single | 1.2 kV | - 20 V, 20 V | - 55 C | + 150 C | GT10Q101 | ||||||||
Not Available Online | Si | D2PAK-3 (TO-263-3) | Through Hole | Single | 600 V | - 20 V, 20 V | 15 A | + 150 C | GT15J331 | ||||||||
Not Available Online | Si | TO-3PN-3 | Through Hole | Single | 1.2 kV | - 25 V, 25 V | 39 A | - 55 C | + 150 C | GT40Q323 | |||||||
Not Available Online | Si | TO-3P | Through Hole | Single | 600 V | - 20 V, 20 V | - 55 C | + 150 C | GT50J325 | ||||||||
Not Available Online | GT50N324 | ||||||||||||||||
Not Available Online | |||||||||||||||||
Not Available Online | Si | TO-220-3 FP | Through Hole | Single | 600 V | - 20 V, 20 V | 15 A | - 55 C | + 150 C | GT15J321 | Bulk | ||||||
Not Available Online | Si | TO-3P(LH)-3 | Through Hole | Single | 1.5 kV | - 25 V, 25 V | - 55 C | + 150 C | GT40T301 | ||||||||
Not Available Online | Si | TO-3PN-3 | Through Hole | Single | 600 V | 1.5 V | - 25 V, 25 V | 59 A | 230 W | - 55 C | + 175 C | GT30J341 | Tray | ||||
Not Available Online | |||||||||||||||||
Not Available Online | Si | TO-3P | Through Hole | Single | 600 V | - 20 V, 20 V | - 55 C | + 150 C | GT50J102 | Bulk | |||||||
Not Available Online | Si | TO-3P | Through Hole | Single | 600 V | - 20 V, 20 V | - 55 C | + 150 C | GT50J301 | Bulk | |||||||
Mfr: GT25Q301(Q) TTI: Not Assigned Toshiba Availability: Not Available OnlineIGBTs High Power Motor N Channel IGBT 2.7V | Not Available Online | Si | TO-3P | Through Hole | Single | 1.2 kV | - 20 V, 20 V | 25 A | - 55 C | + 150 C | GT25Q301 | ||||||
Not Available Online | Si | TO-3P | Through Hole | Single | 1 kV | - 25 V, 25 V | - 55 C | + 150 C | GT60N321 | ||||||||
Not Available Online | Si | TO-220SIS-3 | Through Hole | Single | 600 V | 1.5 V | - 25 V, 25 V | 15 A | 30 W | - 55 C | + 150 C | GT15J341 | |||||
Not Available Online | Si | TO-3PN-3 | Through Hole | Single | 1.8 kV | 2.9 V | - 25 V, 25 V | 40 A | 375 W | - 55 C | + 175 C | GT40WR21 |
