ROHM Semiconductor - IGBTs
283 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Package / Case | Mounting Style | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Maximum Gate Emitter Voltage | Continuous Collector Current at 25 C | Pd - Power Dissipation | Minimum Operating Temperature | Maximum Operating Temperature | Series | Qualification | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: RGW80TS65GC13 TTI: Not Assigned ROHM Semiconductor Availability: Not Available OnlineIGBTs High-Speed Fast Switching Type, 650V 40A, TO-247N, Field Stop Trench IGBT | Not Available Online | Si | TO-247GE-3 | Through Hole | Single | 650 V | 1.9 V | 30 V | 78 A | 214 W | - 40 C | + 175 C | Tube | |||||
Mfr: RGTVX6TS65GC13 TTI: Not Assigned ROHM Semiconductor Availability: Not Available OnlineIGBTs 2us Short-Circuit Tolerance, 650V 80A, TO-247N, Field Stop Trench IGBT | Not Available Online | Si | TO-247GE-3 | Through Hole | Single | 650 V | 1.9 V | 30 V | 144 A | 404 W | - 40 C | + 175 C | Tube | |||||
Not Available Online | Si | DIE | SMD/SMT | Single | 650 V | 1.5 V | 30 V | 40 A | - 40 C | + 175 C | ||||||||
Not Available Online | Si | DIE | SMD/SMT | Single | 650 V | 1.5 V | 30 V | 50 A | - 40 C | + 175 C | ||||||||
Not Available Online | Si | DIE | SMD/SMT | Single | 650 V | 1.5 V | 30 V | 60 A | - 40 C | + 175 C | ||||||||
Not Available Online | Si | DIE | SMD/SMT | Single | 1.8 kV | 2.2 V | 30 V | 40 A | - 40 C | + 175 C | ||||||||
Mfr: RGTV00TS65GC13 TTI: Not Assigned ROHM Semiconductor Availability: Not Available OnlineIGBTs 2us Short-Circuit Tolerance, 650V 50A, TO-247N, Field Stop Trench IGBT | Not Available Online | Si | TO-247GE-3 | Through Hole | Single | 650 V | 1.9 V | 30 V | 95 A | 276 W | - 40 C | + 175 C | Tube | |||||
Not Available Online | Si | DIE | SMD/SMT | Single | 1.2 kV | 1.7 V | 30 V | 50 A | - 40 C | + 175 C | MG7212WZ |
